SPP06N80C3XK Equivalent & Substitute Parts

Part Overview

The SPP06N80C3XK is an N-Channel 800V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-220-3 through-hole package. This device is classified as obsolete, though 1175 pieces remain in stock as new original inventory. The SPP06N80C3XK serves applications requiring high-voltage switching with moderate current handling in power conversion and motor control circuits.

Due to its obsolete status, identifying equivalent and substitute parts is necessary for design continuity, long-term supply chain planning, and new project implementations. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters.

Key Parameters

Parameter	Value	Specification
Drain to Source Voltage (Vdss)	800 V	Maximum voltage rating between drain and source
Continuous Drain Current (Id) @ 25°C	6A (Tc)	Maximum continuous current at case temperature
On-Resistance (Rds On) @ Id, Vgs	900 mOhm @ 3.8A, 10V	Static drain-source resistance at specified conditions
Gate Threshold Voltage (Vgs(th)) @ Id	3.9V @ 250µA	Minimum gate voltage for device conduction
Power Dissipation (Max)	83W (Tc)	Maximum power dissipation at case temperature
Operating Temperature Range	-55°C ~ 150°C (TJ)	Junction temperature operating limits
Package Type	TO-220-3	Through-hole mounting configuration
Gate Charge (Qg) @ Vgs	41 nC @ 10V	Total gate charge at specified gate voltage
Input Capacitance (Ciss) @ Vds	785 pF @ 100V	Input capacitance at specified drain-source voltage

Substitute Part Grouping Explanation

Substitution of the SPP06N80C3XK is determined by the following critical electrical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss) must equal or exceed 800V
Continuous Drain Current (Id) must equal or exceed 6A at 25°C case temperature
On-Resistance (Rds On) characteristics must support equivalent switching performance
Power Dissipation capability must support thermal requirements
Gate drive voltage compatibility at 10V nominal operation
Operating temperature range must encompass -55°C to 150°C

Secondary Compatibility Factors:

Package type: TO-220-3 through-hole mounting
Gate threshold voltage within acceptable drive circuit tolerance
Gate charge and input capacitance suitable for existing gate driver circuits

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with different packaging or compliance status) and Functional Alternatives (different voltage or current ratings that satisfy application requirements within design margins).

Parameter Comparison

Parameter	SPP06N80C3XK	SPP06N80C3XKSA1	IRFB9N65APBF	STP6N60M2	STP7LN80K5	STP7N60M2	STP7N80K5
Manufacturer	Infineon	Infineon	Vishay Siliconix	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	650	600	800	600	800
Id @ 25°C (A)	6	6	8.5	4.5	5	5	6
Rds On (mOhm)	900 @ 3.8A, 10V	900 @ 3.8A, 10V	930 @ 5.1A, 10V	1200 @ 2.25A, 10V	1150 @ 2.5A, 10V	950 @ 2.5A, 10V	1200 @ 3A, 10V
Vgs(th) (V)	3.9 @ 250µA	3.9 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 100µA	4 @ 250µA	5 @ 100µA
Qg (nC)	41 @ 10V	41 @ 10V	48 @ 10V	8 @ 10V	12 @ 10V	8.8 @ 10V	13.4 @ 10V
Ciss (pF)	785 @ 100V	785 @ 100V	1417 @ 25V	232 @ 100V	270 @ 100V	271 @ 100V	360 @ 100V
Power Dissipation (W)	83	83	167	60	85	60	110
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

SPP06N80C3XKSA1 is the direct parametric equivalent to SPP06N80C3XK. Both devices share identical electrical specifications: 800V Vdss, 6A continuous drain current, 900 mOhm on-resistance, and 83W power dissipation. The primary difference is product status and compliance: SPP06N80C3XKSA1 is active with ROHS3 compliance and improved moisture sensitivity rating (MSL 1 versus MSL 3), making it suitable for new designs and long-term supply chain continuity.

Functional Alternatives for High-Voltage 800V Applications:

STP7N80K5 and STP7LN80K5 are active STMicroelectronics alternatives maintaining the 800V voltage rating. STP7N80K5 matches the 6A current rating with 110W power dissipation and SuperMESH5™ technology. STP7LN80K5 provides 5A current rating with 85W dissipation and MDmesh™ technology. Both devices are ROHS3 compliant and suitable for applications where the 800V rating is mandatory.

Lower Voltage Alternatives:

STP7N60M2 and STP6N60M2 operate at 600V, representing a voltage derating of 25% from the original specification. These parts are suitable only for applications where the 800V rating provides design margin and the actual operating voltage does not exceed 600V. STP7N60M2 provides 5A current with 60W dissipation; STP6N60M2 provides 4.5A current with 60W dissipation.

Cross-Manufacturer Alternative:

IRFB9N65APBF (Vishay Siliconix) operates at 650V with 8.5A current rating and 167W power dissipation. This device represents a voltage derating to 650V but provides higher current capability and thermal headroom. Selection requires confirmation that 650V voltage rating satisfies application requirements.

All substitute parts maintain TO-220-3 through-hole packaging, -55°C to 150°C operating temperature range, and ROHS3 compliance (except the obsolete main part). Gate drive voltage compatibility at 10V nominal operation is maintained across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can SPP06N80C3XKSA1 be used as a direct replacement for SPP06N80C3XK?

A: Yes. SPP06N80C3XKSA1 is a parametric equivalent with identical electrical specifications. The device is active with ROHS3 compliance and improved moisture sensitivity rating, making it the preferred direct replacement for new designs and inventory replenishment.

Q: What is the primary difference between SPP06N80C3XK and STP7N80K5?

A: Both devices operate at 800V with 6A continuous drain current. The primary differences are manufacturer (Infineon versus STMicroelectronics), technology platform (CoolMOS™ versus SuperMESH5™), power dissipation (83W versus 110W), and on-resistance characteristics (900 mOhm versus 1200 mOhm). STP7N80K5 is active and ROHS3 compliant.

Q: Can STP7N60M2 replace SPP06N80C3XK in existing designs?

A: STP7N60M2 can replace SPP06N80C3XK only if the application operates at voltages not exceeding 600V. The device provides 5A current matching the original specification but operates at 25% lower voltage rating. This substitution requires design review to confirm voltage margin adequacy.

Q: What is the significance of the TO-220-3 package specification?

A: TO-220-3 is a through-hole package with three leads (Gate, Drain, Source). All substitute parts maintain this package type, ensuring mechanical and thermal compatibility with existing PCB layouts and heat sink mounting arrangements. No board redesign is required for package-compatible substitutes.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the device. SPP06N80C3XK requires 41 nC at 10V. Substitutes range from 8 nC (STP6N60M2) to 48 nC (IRFB9N65APBF). Lower gate charge reduces switching losses and gate driver power consumption. Higher gate charge increases switching time and driver requirements. Existing gate driver circuits must be verified for compatibility with substitute gate charge specifications.

Q: What does ROHS3 compliance indicate?

A: ROHS3 compliance certifies that the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active substitute parts are ROHS3 compliant, suitable for applications requiring environmental compliance. The obsolete SPP06N80C3XK does not specify ROHS status.

Q: Why does IRFB9N65APBF have higher power dissipation than the original part?

A: IRFB9N65APBF dissipates 167W compared to 83W for SPP06N80C3XK, despite lower voltage rating (650V). This results from higher continuous drain current (8.5A versus 6A) and slightly higher on-resistance (930 mOhm versus 900 mOhm). The device requires enhanced thermal management but provides greater current capacity for applications requiring higher current handling.

Q: Are all substitute parts suitable for -55°C to 150°C operation?

A: Yes. All substitute parts maintain the -55°C to 150°C junction temperature operating range, ensuring thermal compatibility with the original specification across industrial and automotive temperature environments.

Q: What is the difference between MSL 3 and MSL 1 moisture sensitivity ratings?

A: MSL 3 (SPP06N80C3XK) allows 168 hours of moisture exposure before reflow soldering. MSL 1 (SPP06N80C3XKSA1 and all active substitutes) allows unlimited moisture exposure. MSL 1 devices require less stringent moisture control during storage and handling, reducing manufacturing process complexity and cost.

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