SPD50N06S2L-13 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The SPD50N06S2L-13 is an N-Channel 55V 50A surface mount MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part is housed in a TO-252-3 (DPAK) package with a maximum power dissipation of 136W at case temperature and operates across the temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	50	A
On-Resistance (Rds On) @ 34A, 10V	12.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 80µA	2	V
Gate Charge (Qg) @ 10V	69	nC
Input Capacitance (Ciss) @ 25V	2300	pF
Power Dissipation (Max)	136	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the SPD50N06S2L-13 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Minimum 55V required
Continuous Drain Current (Id): Minimum 50A at 25°C
Package Type: TO-252-3 (DPAK) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage Compatibility: 10V gate drive operation

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching performance
Power Dissipation: Equivalent or higher thermal capability

The substitute parts listed below meet or exceed the primary criteria and maintain functional compatibility within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	SPD50N06S2L-13 (Main)	SQD40N06-14L_GE3	STD60NF55LAT4	STD60NF55LT4	SUD50N06-09L-E3
Manufacturer	Infineon	Vishay Siliconix	STMicroelectronics	STMicroelectronics	Vishay Siliconix
Vdss (V)	55	60	55	55	60
Id @ 25°C (A)	50	40	60	60	50
Rds On @ 10V (mOhm)	12.7 @ 34A	14 @ 20A	15 @ 30A	15 @ 30A	9.3 @ 20A
Vgs(th) (V)	2 @ 80µA	2.5 @ 250µA	2 @ 250µA	2 @ 250µA	3 @ 250µA
Qg @ 10V (nC)	69	51	40	56	70
Ciss @ 25V (pF)	2300	2105	1950	1950	2650
Power Dissipation (W)	136	75	110	100	136
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 (DPAK)	TO-252AA	TO-252 (DPAK)	DPAK	TO-252AA
Product Status	Obsolete	Active	Active	Active	Active
RoHS Compliance	Non-compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

SUD50N06-09L-E3 (Vishay Siliconix)

This substitute provides the closest electrical match to the SPD50N06S2L-13. It maintains identical 50A continuous drain current rating and 136W power dissipation capability. The 60V Vdss rating provides 5V margin above the original specification. The on-resistance of 9.3 mOhm at 20A is superior to the original 12.7 mOhm specification, resulting in lower conduction losses. Gate charge of 70 nC is comparable to the original 69 nC. The part is ROHS3 compliant and carries active product status with 23,300 units in stock. This device is recommended as the primary substitute for direct replacement applications.

STD60NF55LT4 (STMicroelectronics)

This substitute offers higher continuous drain current (60A) and lower gate charge (56 nC @ 5V), providing improved switching performance. The 55V Vdss matches the original specification exactly. On-resistance of 15 mOhm is slightly higher than the original but acceptable for most applications. Power dissipation of 100W is lower than the original 136W; thermal design review is required for high-power applications. The part is ROHS3 compliant, AEC-Q101 qualified, and carries active product status with 17,810 units in stock. This device is suitable for applications where improved switching characteristics and higher current capability are beneficial.

STD60NF55LAT4 (STMicroelectronics)

This automotive-grade substitute (AEC-Q101 qualified) provides 60A continuous drain current and 55V Vdss matching. Gate charge of 40 nC is significantly lower than the original, enabling faster switching. On-resistance of 15 mOhm is comparable to STD60NF55LT4. Power dissipation of 110W is lower than the original specification. This device is recommended for automotive and mission-critical applications requiring AEC-Q101 qualification. Product status is active with 2,900 units in stock.

SQD40N06-14L_GE3 (Vishay Siliconix)

This substitute provides 60V Vdss with 40A continuous drain current, representing a lower current rating than the original 50A specification. On-resistance of 14 mOhm is acceptable. Power dissipation of 75W is significantly lower than the original 136W. This device is suitable only for applications where the 40A current rating is sufficient and thermal constraints are less demanding. Product status is active with 15,100 units in stock. This substitute is not recommended for direct replacement in applications requiring the full 50A capability.

Frequently Asked Questions (FAQ)

Q: Can the SQD40N06-14L_GE3 be used as a direct replacement for the SPD50N06S2L-13?

A: No. The SQD40N06-14L_GE3 has a maximum continuous drain current of 40A, which is 10A below the original 50A specification. Use this substitute only in applications where the lower current rating is acceptable and thermal design permits the reduced power dissipation of 75W.

Q: What is the primary advantage of the SUD50N06-09L-E3 substitute?

A: The SUD50N06-09L-E3 maintains the identical 50A continuous drain current and 136W power dissipation of the original part while providing superior on-resistance (9.3 mOhm versus 12.7 mOhm), resulting in lower conduction losses and improved efficiency. It is ROHS3 compliant and carries active product status.

Q: Are the STMicroelectronics substitutes (STD60NF55LT4 and STD60NF55LAT4) pin-compatible with the SPD50N06S2L-13?

A: Yes. Both STMicroelectronics devices use the TO-252 (DPAK) package with identical pinout configuration. Physical and electrical pin compatibility is maintained for direct PCB substitution.

Q: What is the difference between STD60NF55LT4 and STD60NF55LAT4?

A: Both devices share identical electrical specifications (55V, 60A, 15 mOhm Rds On). The primary difference is that STD60NF55LAT4 carries AEC-Q101 automotive qualification, making it suitable for automotive and mission-critical applications. STD60NF55LT4 is the standard industrial-grade version. Gate charge differs slightly (56 nC versus 40 nC), with STD60NF55LAT4 offering lower switching losses.

Q: Can I use a substitute with higher Vdss rating (60V) in place of the 55V original?

A: Yes. A higher Vdss rating provides additional voltage margin and is electrically compatible. The SUD50N06-09L-E3 and SQD40N06-14L_GE3 both feature 60V Vdss ratings and are suitable for applications designed for 55V operation.

Q: What thermal considerations apply when substituting the SPD50N06S2L-13?

A: The original part is rated for 136W power dissipation. The SUD50N06-09L-E3 maintains this rating. The STMicroelectronics devices (STD60NF55LT4 and STD60NF55LAT4) are rated for 100W and 110W respectively. Thermal design review is required if the substitute has lower power dissipation rating. The SQD40N06-14L_GE3 with 75W rating requires significant thermal design reassessment.

Q: Are all substitute parts RoHS compliant?

A: The STMicroelectronics devices (STD60NF55LT4 and STD60NF55LAT4) and the Vishay SUD50N06-09L-E3 are ROHS3 compliant. The original SPD50N06S2L-13 is RoHS non-compliant. The SQD40N06-14L_GE3 RoHS status is not specified in the provided data.

Q: Which substitute offers the best switching performance?

A: The STD60NF55LAT4 offers the lowest gate charge (40 nC @ 5V), enabling the fastest switching transitions and lowest switching losses. The STD60NF55LT4 provides 56 nC gate charge. The SUD50N06-09L-E3 and original part both feature approximately 70 nC gate charge.

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