SPD35N10 N-Channel 100V 35A MOSFET Equivalent & Substitute Parts

Part Overview

The SPD35N10 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 35A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and belongs to the SIPMOS® series. The SPD35N10 is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing production support, design updates, and component sourcing continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	35	A (Tc)
On-State Resistance (Rds On) @ 26.4A, 10V	44	mOhm
Gate Charge (Qg) @ 10V	65	nC
Input Capacitance (Ciss) @ 25V	1570	pF
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3, DPAK	Surface Mount
Gate Voltage (Vgs) Max	±20	V
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the SPD35N10 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish substitution validity:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must equal or exceed 35A at 25°C
Package Type: Must be TO-252-3 (DPAK) or mechanically compatible surface mount variant
Gate Voltage Rating (Vgs): Must accommodate ±20V or greater
Operating Temperature Range: Must span -55°C to 175°C or equivalent

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below meet these criteria with varying degrees of parameter alignment. All substitutes maintain the same voltage class (100V), package family (DPAK), and temperature operating range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
SPD35N10	Infineon	100	35 (Tc)	44 @ 26.4A, 10V	65 @ 10V	1570 @ 25V	150	TO-252-3	Obsolete
BUK7240-100A,118	Nexperia	100	34 (Tc)	40 @ 25A, 10V	—	2293 @ 25V	114	DPAK	Obsolete
FDD3682	onsemi	100	32 (Tc)	36 @ 32A, 10V	28 @ 10V	1250 @ 25V	95	TO-252AA	Not For New Designs
RSD201N10TL	Rohm	100	20 (Tc)	46 @ 20A, 10V	55 @ 10V	2100 @ 25V	20	CPT3	Active
STD15NF10T4	STMicroelectronics	100	23 (Tc)	65 @ 12A, 10V	40 @ 10V	870 @ 25V	70	DPAK	Active
STD20NF10T4	STMicroelectronics	100	25 (Tc)	45 @ 15A, 10V	55 @ 10V	1200 @ 25V	85	DPAK	Active
STD25N10F7	STMicroelectronics	100	25 (Tc)	35 @ 12.5A, 10V	14 @ 10V	920 @ 50V	40	DPAK	Active
STD25NF10LA	STMicroelectronics	100	25 (Tc)	35 @ 12.5A, 10V	52 @ 5V	1710 @ 25V	100	DPAK	Active
STD25NF10LT4	STMicroelectronics	100	25 (Tc)	35 @ 12.5A, 10V	52 @ 5V	1710 @ 25V	100	DPAK	Active
STD25NF10T4	STMicroelectronics	100	25 (Tc)	38 @ 12.5A, 10V	55 @ 10V	1550 @ 25V	100	DPAK	Active

Engineering Selection Recommendations

Full Current Replacement (35A Rated):

The BUK7240-100A,118 from Nexperia provides the closest current rating match at 34A continuous drain current. This part maintains 100V Vdss rating and DPAK packaging. However, the BUK7240-100A,118 is classified as obsolete, limiting its long-term availability. The device is AEC-Q101 qualified for automotive applications and carries ROHS3 compliance.

Active Production Alternatives (25A Rated):

For applications where 25A continuous drain current is sufficient, the STMicroelectronics STD25NF10T4, STD25NF10LT4, and STD25NF10LA offer active production status with full availability. These devices are part of the STripFET™ II series and provide superior on-state resistance characteristics (35-38 mOhm) compared to the original SPD35N10 (44 mOhm). All three maintain 100V Vdss, DPAK packaging, and -55°C to 175°C operating temperature range. STD25NF10LT4 and STD25NF10LA are electrically identical with 688,200 and 800,513 units respectively in current inventory.

Reduced Current Applications (20-23A Rated):

The STD20NF10T4 (25A) and STD15NF10T4 (23A) from STMicroelectronics serve applications requiring lower current handling. Both maintain active production status and ROHS3 compliance. The STD20NF10T4 offers 45 mOhm on-state resistance at 15A, 10V, providing a balanced alternative for moderate current requirements.

Compliance and Certification:

All recommended active substitutes carry ROHS3 compliance and REACH unaffected status. The BUK7240-100A,118 includes AEC-Q101 automotive qualification. Moisture sensitivity level is MSL 1 (unlimited) across all parts, indicating no moisture-related handling restrictions.

Frequently Asked Questions (FAQ)

Q: Can the SPD35N10 be directly replaced with a 25A-rated device?

A: Direct replacement depends on application current requirements. If the circuit operates at or below 25A continuous drain current, devices such as STD25NF10T4, STD25NF10LT4, or STD25NF10LA are suitable. If the application requires the full 35A rating, only the BUK7240-100A,118 provides equivalent current capacity, though it is obsolete.

Q: What is the difference between STD25NF10T4, STD25NF10LT4, and STD25NF10LA?

A: STD25NF10LT4 and STD25NF10LA are electrically identical with identical electrical specifications. STD25NF10T4 differs in gate threshold voltage specification (4V @ 250µA versus 2.5V @ 250µA) and on-state resistance measurement conditions (38 mOhm @ 12.5A versus 35 mOhm @ 12.5A). All three maintain 100W power dissipation and DPAK packaging.

Q: Are all substitute parts available in the same package?

A: All substitutes use TO-252-3 DPAK or mechanically compatible variants (TO-252AA). Physical pin configuration and PCB footprint compatibility are maintained across all listed parts. RSD201N10TL uses CPT3 packaging, which differs mechanically and requires footprint verification before substitution.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (Qg) reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses and reduced heat generation. STD25N10F7 exhibits 14 nC gate charge compared to SPD35N10's 65 nC, enabling faster switching and improved efficiency in high-frequency applications.

Q: Can I use an active production part to replace an obsolete part?

A: Yes. Active production parts such as STD25NF10T4 and STD25NF10LT4 provide long-term availability and supply security compared to obsolete devices. Verify that electrical parameters meet application requirements before implementation.

Q: What is the significance of RoHS3 compliance?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active production substitutes carry ROHS3 certification, ensuring regulatory compliance for new designs and manufacturing.

Q: How do I determine if a substitute part is suitable for my application?

A: Compare the application's required drain current, drain-to-source voltage, and thermal dissipation against the substitute part's rated specifications. Ensure the substitute's Vdss equals or exceeds 100V, continuous drain current meets or exceeds application requirements, and power dissipation capacity accommodates thermal load. Verify package compatibility with existing PCB layout.

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