SPD30N08S2L-21 Equivalent & Substitute Parts

Part Overview

The SPD30N08S2L-21 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 30A continuous drain current at 25°C. This device is housed in a TO-252-3 (DPAK) surface mount package and is part of the OptiMOS™ series. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the TO-252-3 package footprint and support the electrical specifications required for the original application.

Key Parameters

Parameter	SPD30N08S2L-21	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	20.5 mOhm @ 25A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2 @ 80µA	V
Gate Charge (Qg Max) @ Vgs	72 @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	2130 @ 25V	pF
Power Dissipation (Max)	136	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the SPD30N08S2L-21 is determined by the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥75V to maintain voltage margin
Package Type: Must be TO-252-3 (DPAK) for PCB footprint compatibility
Continuous Drain Current (Id): Must be ≥30A at 25°C to support load requirements
Operating Temperature Range: Must support -55°C to 175°C (TJ)
Gate Voltage (Vgs Max): Must support ±20V gate drive

Secondary Compatibility Criteria:

On-Resistance (Rds On): Lower values improve efficiency; values up to 24 mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values up to 84 nC are acceptable
Input Capacitance (Ciss): Lower values reduce gate drive requirements; values up to 3070 pF are acceptable

The four substitute parts listed below meet or exceed the primary criteria and are electrically compatible with the SPD30N08S2L-21 in TO-252-3 package applications.

Parameter Comparison

Parameter	SPD30N08S2L-21	IRFR3607TRPBF	STD45NF75T4	TSM230N06CP ROG	NVD5C684NLT4G	Unit
Manufacturer	Infineon	Infineon	STMicroelectronics	Taiwan Semiconductor	onsemi	—
Vdss	75	75	75	60	60	V
Id @ 25°C	30	56	40	34	38	A (Tc)
Rds On (Max)	20.5 @ 25A, 10V	9 @ 46A, 10V	24 @ 20A, 10V	23 @ 20A, 10V	16.5 @ 15A, 10V	mOhm
Vgs(th) (Max)	2 @ 80µA	4 @ 100µA	4 @ 250µA	2.5 @ 250µA	2.1 @ 250µA	V
Qg (Max) @ 10V	72	84	80	28	4.6	nC
Ciss (Max)	2130 @ 25V	3070 @ 50V	1760 @ 25V	1680 @ 25V	700 @ 25V	pF
Power Dissipation (Max)	136	140	125	104	27	W (Tc)
Operating Temp Range	-55 to 175	-55 to 175	-55 to 175	150 (TJ)	-55 to 175	°C
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IRFR3607TRPBF (Infineon HEXFET®)

This part is the strongest direct substitute for the SPD30N08S2L-21. It maintains the 75V Vdss rating and TO-252-3 package, with superior continuous drain current (56A vs. 30A) and lower on-resistance (9 mOhm vs. 20.5 mOhm). The device is active in production with ROHS3 compliance. Operating temperature range matches the original (-55°C to 175°C). Gate charge is slightly elevated (84 nC vs. 72 nC) but remains within acceptable switching loss parameters. This part provides enhanced performance headroom for the same footprint.

STD45NF75T4 (STMicroelectronics STripFET™ II)

This part maintains 75V Vdss and TO-252-3 package compatibility with 40A continuous drain current. On-resistance is 24 mOhm at 20A/10V, slightly higher than the original but acceptable for most applications. The device is active in production with ROHS3 compliance and full -55°C to 175°C operating range. Gate charge (80 nC) and input capacitance (1760 pF) are comparable to the original. This part is suitable for applications where the 75V rating is critical and moderate current headroom is acceptable.

TSM230N06CP ROG (Taiwan Semiconductor)

This part operates at 60V Vdss, which is 15V lower than the original specification. It provides 34A continuous drain current in a TO-252-3 package with lower on-resistance (23 mOhm) and significantly lower gate charge (28 nC). The device is active in production with ROHS3 compliance. However, the maximum operating temperature is limited to 150°C (TJ), which is 25°C below the original specification. This part is suitable only for applications where 60V voltage margin is sufficient and operating temperature does not exceed 150°C.

NVD5C684NLT4G (onsemi)

This part operates at 60V Vdss with 38A continuous drain current in a TO-252-3 package. It features the lowest on-resistance (16.5 mOhm) and gate charge (4.6 nC) among all substitutes, indicating superior switching efficiency. The device is active in production with ROHS3 compliance, AEC-Q101 automotive qualification, and full -55°C to 175°C operating range. However, the 60V Vdss rating is 15V below the original. This part is suitable for applications where 60V voltage margin is acceptable and automotive-grade reliability is required.

Recommendation Summary:

For direct replacement requiring 75V Vdss: Use IRFR3607TRPBF or STD45NF75T4.

For applications tolerating 60V Vdss with enhanced efficiency: Use NVD5C684NLT4G (automotive applications) or TSM230N06CP ROG (non-automotive, temperature ≤150°C).

All substitute parts are active in production and RoHS3 compliant, addressing the obsolescence of the original SPD30N08S2L-21.

Frequently Asked Questions (FAQ)

Q: Can I use a 60V-rated MOSFET to replace the 75V SPD30N08S2L-21?

A: Only if your application circuit operates at voltages ≤60V. The 60V-rated parts (TSM230N06CP ROG and NVD5C684NLT4G) have lower voltage headroom and will not tolerate transient overvoltages that a 75V device would withstand. Verify your maximum supply voltage and transient conditions before selecting a 60V substitute.

Q: Are all substitute parts pin-compatible with the SPD30N08S2L-21?

A: Yes. All four substitute parts use the TO-252-3 (DPAK) package with identical pin configuration: Gate (pin 1), Drain (pin 2), and Source (tab). PCB footprints are directly compatible without modification.

Q: What is the difference between the IRFR3607TRPBF and STD45NF75T4?

A: Both maintain 75V Vdss and TO-252-3 compatibility. The IRFR3607TRPBF offers higher current capacity (56A vs. 40A) and lower on-resistance (9 mOhm vs. 24 mOhm), making it more efficient. The STD45NF75T4 provides moderate current headroom (40A) with acceptable on-resistance. Choose IRFR3607TRPBF for high-efficiency applications; choose STD45NF75T4 for cost-optimized designs where 40A is sufficient.

Q: Why does the NVD5C684NLT4G have such low gate charge compared to other parts?

A: The NVD5C684NLT4G is an automotive-grade device (AEC-Q101 qualified) optimized for switching efficiency and thermal performance. Lower gate charge (4.6 nC) reduces gate drive power and switching losses. This is a design advantage for applications requiring high reliability and efficiency, though it operates at 60V Vdss rather than 75V.

Q: Can I use the TSM230N06CP ROG in applications operating above 150°C?

A: No. The TSM230N06CP ROG is specified for maximum junction temperature of 150°C (TJ), which is 25°C below the original SPD30N08S2L-21 specification of 175°C. Applications requiring operation above 150°C must use IRFR3607TRPBF, STD45NF75T4, or NVD5C684NLT4G, all of which support -55°C to 175°C.

Q: What does RoHS3 compliance mean for my design?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All substitute parts are RoHS3 compliant, while the original SPD30N08S2L-21 is non-compliant. If your design requires RoHS compliance, any of the four substitutes are acceptable.

Q: Which substitute part has the lowest on-resistance?

A: The IRFR3607TRPBF has the lowest on-resistance at 9 mOhm (measured at 46A, 10V Vgs). Lower on-resistance reduces conduction losses and heat generation. For power-sensitive applications, the IRFR3607TRPBF is the optimal choice among 75V-rated substitutes.

Q: Are there any moisture sensitivity differences between the substitutes?

A: The TSM230N06CP ROG has MSL 3 (168 hours), requiring controlled storage conditions. All other parts, including the original SPD30N08S2L-21, have MSL 1 (unlimited), allowing standard storage without moisture control. For high-volume production with standard handling, avoid TSM230N06CP ROG unless moisture-controlled storage is available.

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