SPD22N08S2L-50 Equivalent & Substitute Parts

Part Overview

The SPD22N08S2L-50 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 25A continuous drain current at 25°C. This device is housed in a TO-252-3 (DPAK) surface mount package and is designed for general-purpose switching applications requiring moderate current handling and voltage ratings.

The SPD22N08S2L-50 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

SPD22N08S2L-50
Infineon TechnologiesIn Stock: 5739SPD22N08S2L-50 Datasheet
SPD22N08S2L-50
Current Part
IRFR3607TRPBF
Infineon TechnologiesIn Stock: 25212IRFR3607TRPBF Datasheet
IRFR3607TRPBF
MFR Recommended
DMNH6042SK3Q-13
Diodes IncorporatedIn Stock: 3224DMNH6042SK3Q-13 Datasheet
DMNH6042SK3Q-13
MFR Recommended
TK8S06K3L(T6L1,NQ)
Toshiba Semiconductor and StorageIn Stock: 2725TK8S06K3L(T6L1,NQ) Datasheet
TK8S06K3L(T6L1,NQ)
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 25 A (Tc)
On-State Resistance (Rds On) @ 11A, 10V 50 mOhm
Gate Threshold Voltage (Vgs(th)) @ 31µA 2 V
Gate Charge (Qg) @ 10V 33 nC
Power Dissipation (Max) 75 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3 (DPAK)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the SPD22N08S2L-50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must be equal to or greater than 75V
  • Continuous Drain Current (Id): Must be equal to or greater than 25A at 25°C
  • On-State Resistance (Rds On): Should be comparable or lower for equivalent thermal performance
  • Gate Threshold Voltage (Vgs(th)): Must fall within compatible drive voltage ranges
  • Package Type: Must be TO-252-3 (DPAK) or mechanically equivalent surface mount package
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)

Substitute Parts Identified:

Group 1 – Higher Current Capability (Vdss ≥ 75V, Id ≥ 25A):

  • IRFR3607TRPBF (Infineon): 75V, 56A, improved Rds On performance, active product status

Group 2 – Reduced Voltage Rating (Vdss = 60V, Id = 25A):

  • DMNH6042SK3Q-13 (Diodes Incorporated): 60V, 25A, automotive qualified, active product status
  • TK8S06K3L(T6L1,NQ) (Toshiba): 60V, 8A, lower current rating, active product status

The IRFR3607TRPBF provides direct substitution with enhanced performance. The DMNH6042SK3Q-13 and TK8S06K3L(T6L1,NQ) are suitable only for applications where the 60V voltage rating is acceptable and current requirements do not exceed their respective ratings.

Parameter Comparison

Parameter SPD22N08S2L-50 IRFR3607TRPBF DMNH6042SK3Q-13 TK8S06K3L(T6L1,NQ)
Manufacturer Infineon Infineon Diodes Inc. Toshiba
Vdss (V) 75 75 60 60
Id @ 25°C (A) 25 56 25 8
Rds On (mOhm) 50 @ 11A, 10V 9 @ 46A, 10V 50 @ 6A, 10V 54 @ 4A, 10V
Vgs(th) (V) 2 @ 31µA 4 @ 100µA 3 @ 250µA 3 @ 1mA
Gate Charge (nC) 33 @ 10V 84 @ 10V 8.8 @ 10V 10 @ 10V
Power Dissipation (W) 75 (Tc) 140 (Tc) 2 (Ta) 25 (Tc)
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK)
Product Status Obsolete Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFR3607TRPBF

The IRFR3607TRPBF is the preferred substitute for the SPD22N08S2L-50. This part maintains the 75V voltage rating and exceeds the current requirement with 56A continuous drain current. The IRFR3607TRPBF offers superior on-state resistance performance (9 mOhm versus 50 mOhm), resulting in lower power dissipation and improved thermal efficiency. The device is manufactured by Infineon Technologies, carries active product status, and is ROHS3 compliant. Inventory availability is substantial (25,200 pieces). The TO-252-3 (DPAK) package is mechanically identical, enabling direct board-level substitution without layout modifications.

Secondary Recommendation: DMNH6042SK3Q-13

The DMNH6042SK3Q-13 is suitable for applications where the 75V voltage rating is not required and the 25A current specification is the primary design constraint. This Diodes Incorporated device maintains the 25A continuous drain current and 50 mOhm on-state resistance of the original part. The 60V voltage rating is acceptable for lower-voltage applications. This part carries AEC-Q101 automotive qualification and ROHS3 compliance. The TO-252-3 package is mechanically compatible. Inventory availability is adequate (3,176 pieces).

Tertiary Recommendation: TK8S06K3L(T6L1,NQ)

The TK8S06K3L(T6L1,NQ) is applicable only to applications requiring significantly lower current levels (8A maximum). This Toshiba device operates at 60V and is part of the U-MOSIV series. While it offers ROHS3 compliance and active product status, the reduced current rating limits its use to designs where the SPD22N08S2L-50 was over-specified for current handling. This part is not recommended as a direct replacement for full-current applications.

Compliance Considerations:

The SPD22N08S2L-50 is RoHS non-compliant. All three substitute parts (IRFR3607TRPBF, DMNH6042SK3Q-13, and TK8S06K3L(T6L1,NQ)) are ROHS3 compliant, supporting transition to current regulatory requirements. All parts are REACH unaffected and classified under ECCN EAR99.

Frequently Asked Questions (FAQ)

Q1: Can the IRFR3607TRPBF be used as a direct replacement for the SPD22N08S2L-50 without circuit modifications?

A: Yes. The IRFR3607TRPBF maintains the 75V voltage rating and exceeds the 25A current requirement. The TO-252-3 (DPAK) package is mechanically identical. No board layout changes are required. The superior on-state resistance (9 mOhm versus 50 mOhm) will reduce power dissipation, improving thermal performance.

Q2: Why is the DMNH6042SK3Q-13 rated at 60V instead of 75V?

A: The DMNH6042SK3Q-13 is designed for automotive applications where 60V is the standard voltage specification. This lower voltage rating is acceptable for applications not requiring the full 75V capability of the original part. Verify that your circuit design does not require the 75V rating before selecting this substitute.

Q3: What is the significance of the lower gate charge (Qg) in the DMNH6042SK3Q-13?

A: The DMNH6042SK3Q-13 has a gate charge of 8.8 nC compared to 33 nC in the SPD22N08S2L-50. Lower gate charge reduces switching losses and allows faster switching transitions. This is beneficial for high-frequency applications but requires verification that the gate drive circuit can accommodate the different threshold voltage (3V versus 2V).

Q4: Is the TK8S06K3L(T6L1,NQ) suitable for applications currently using the SPD22N08S2L-50?

A: The TK8S06K3L(T6L1,NQ) is not recommended as a direct replacement. Its 8A continuous drain current is significantly lower than the 25A rating of the original part. This device is suitable only for applications where the SPD22N08S2L-50 was over-specified or where circuit redesign can accommodate the reduced current capability.

Q5: Are all substitute parts available in the same packaging format?

A: Yes. All three substitute parts (IRFR3607TRPBF, DMNH6042SK3Q-13, and TK8S06K3L(T6L1,NQ)) are housed in the TO-252-3 (DPAK) surface mount package, which is mechanically compatible with the SPD22N08S2L-50. No package conversion or board redesign is necessary.

Q6: What is the difference between the Tc and Ta temperature specifications?

A: Tc (case temperature) and Ta (ambient temperature) represent different measurement points. Tc is measured at the device case and is typically higher than Ta. The SPD22N08S2L-50 specifies power dissipation at Tc (75W), while the DMNH6042SK3Q-13 specifies power dissipation at Ta (2W). Verify thermal requirements for your specific application.

Q7: Why is the IRFR3607TRPBF preferred despite higher gate charge?

A: The IRFR3607TRPBF's higher gate charge (84 nC) is offset by its superior on-state resistance (9 mOhm), which significantly reduces conduction losses. The higher current rating (56A) provides design margin and improved thermal performance. Active product status and ROHS3 compliance ensure long-term availability and regulatory compliance.

Q8: Can the substitute parts be used in automotive applications?

A: The DMNH6042SK3Q-13 carries AEC-Q101 automotive qualification and is explicitly suitable for automotive use. The IRFR3607TRPBF and TK8S06K3L(T6L1,NQ) do not carry automotive qualification. Verify automotive requirements for your specific application before selecting a substitute.

Request Quote (Ships tomorrow)