SPD18P06P MOSFET P-Channel 60V 18.6A Equivalent & Substitute Parts

Part Overview

The SPD18P06P is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 18.6A continuous drain current at 25°C. The device is housed in a TO-252-3 (DPAK) surface mount package and is designed for 80W power dissipation. The SPD18P06P is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

SPD18P06P
Infineon TechnologiesIn Stock: 18203SPD18P06P Datasheet
SPD18P06P
Current Part
SPD18P06PGBTMA1
Infineon TechnologiesIn Stock: 20783SPD18P06PGBTMA1 Datasheet
SPD18P06PGBTMA1
Parametric Equivalent
AOD407
Alpha & Omega Semiconductor Inc.In Stock: 250208AOD407 Datasheet
AOD407
MFR Recommended
DMP6180SK3-13
Diodes IncorporatedIn Stock: 31245DMP6180SK3-13 Datasheet
DMP6180SK3-13
MFR Recommended
FQD17P06TM
onsemiIn Stock: 24496FQD17P06TM Datasheet
FQD17P06TM
MFR Recommended
NTD20P06LT4G
onsemiIn Stock: 25117NTD20P06LT4G Datasheet
NTD20P06LT4G
MFR Recommended
ZXMP6A17KTC
Diodes IncorporatedIn Stock: 30979ZXMP6A17KTC Datasheet
ZXMP6A17KTC
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 18.6 A (Tc)
On-Resistance (Rds On) @ 13.2A, 10V 130 mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA 4 V
Power Dissipation (Max) 80 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3, DPAK
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the SPD18P06P is determined by the following critical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel topology
  • Drain-to-Source Voltage (Vdss): 60V minimum rating
  • Package: TO-252-3 (DPAK) surface mount configuration
  • Mounting Type: Surface mount compatibility

Secondary Compatibility Factors:

  • Continuous Drain Current (Id): Minimum 18.6A at 25°C for direct replacement; lower ratings indicate reduced current capacity
  • On-Resistance (Rds On): Values within ±20% of 130 mOhm maintain thermal and switching performance
  • Operating Temperature Range: Minimum -55°C to 150°C; extended range to 175°C preferred
  • Gate Threshold Voltage (Vgs(th)): Range of 1V to 4V acceptable for gate drive compatibility
  • Power Dissipation: Minimum 80W (Tc) for equivalent thermal handling

Substitute parts are grouped into two categories: Parametric Equivalents (matching all critical specifications) and Functional Alternatives (meeting core requirements with acceptable trade-offs in secondary parameters).

Parameter Comparison

Parameter SPD18P06P SPD18P06PGBTMA1 AOD407 DMP6180SK3-13 FQD17P06TM NTD20P06LT4G ZXMP6A17KTC
Manufacturer Infineon Infineon Alpha & Omega Diodes Inc. onsemi onsemi Diodes Inc.
Product Status Obsolete Active Active Active Active Active Active
Vdss (V) 60 60 60 60 60 60 60
Id @ 25°C (A) 18.6 (Tc) 18.6 (Tc) 12 (Tc) 14 (Tc) 12 (Tc) 15.5 (Ta) 4.4 (Ta)
Rds On @ 10V (mOhm) 130 @ 13.2A 130 @ 13.2A 115 @ 12A 110 @ 12A 135 @ 6A 150 @ 7.5A 125 @ 2.3A
Vgs(th) (V) 4 @ 1mA 4 @ 1mA 3 @ 250µA 2.7 @ 250µA 4 @ 250µA 2 @ 250µA 1 @ 250µA
Qg @ 10V (nC) 33 33 20 17.1 27 26 17.7
Power Dissipation (W) 80 (Tc) 80 (Tc) 50 (Tc) 1.7 (Ta) 44 (Tc) 65 (Tc) 2.11 (Ta)
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 150 -55 to 150 -55 to 175 -55 to 150
Package TO-252-3 TO-252-3 TO-252 TO-252-3 TO-252AA DPAK TO-252-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

SPD18P06PGBTMA1 is the primary equivalent substitute. This Infineon component maintains identical electrical specifications (18.6A continuous drain current, 130 mOhm Rds On, 33 nC gate charge) and package configuration (TO-252-3). The part is classified as Active with ROHS3 compliance and extended operating temperature range (-55°C to 175°C), matching the original SPD18P06P thermal envelope. This substitute requires no circuit redesign.

Functional Alternatives (Current Capacity Trade-offs):

AOD407, DMP6180SK3-13, FQD17P06TM, and NTD20P06LT4G are active alternatives suitable for applications where continuous drain current requirements are ≤15.5A. These parts maintain 60V Vdss rating and TO-252-3 package compatibility. All are ROHS3 compliant. Selection among these alternatives depends on specific current and thermal requirements:

  • AOD407: 12A continuous current, 50W power dissipation, suitable for moderate-current applications
  • DMP6180SK3-13: 14A continuous current, lower gate charge (17.1 nC), optimized for switching efficiency
  • FQD17P06TM: 12A continuous current, 44W power dissipation, onsemi QFET series
  • NTD20P06LT4G: 15.5A continuous current, 65W power dissipation, closest to original current rating

ZXMP6A17KTC is not recommended as a substitute due to significantly reduced continuous drain current (4.4A), which does not meet the 18.6A requirement of the original design.

All recommended substitutes carry REACH Unaffected and EAR99 ECCN classifications, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can SPD18P06PGBTMA1 be used as a direct replacement for SPD18P06P?

A: Yes. SPD18P06PGBTMA1 is a parametric equivalent with identical electrical specifications (18.6A Id, 130 mOhm Rds On, 60V Vdss) and package configuration (TO-252-3). The part is Active status with ROHS3 compliance. No circuit modifications are required.

Q: What is the difference between the substitute parts listed?

A: Substitute parts differ primarily in continuous drain current rating and power dissipation. SPD18P06PGBTMA1 matches the original 18.6A specification. AOD407, DMP6180SK3-13, FQD17P06TM, and NTD20P06LT4G provide 12A to 15.5A current ratings, suitable for lower-current applications. ZXMP6A17KTC (4.4A) is not suitable for designs requiring the full 18.6A capacity.

Q: Are all substitute parts in the same package?

A: All recommended substitutes use TO-252-3 (DPAK) surface mount packaging, ensuring mechanical and thermal compatibility. FQD17P06TM uses TO-252AA variant, which is functionally equivalent to TO-252-3 for PCB mounting.

Q: What is the significance of Rds On (on-resistance) when selecting a substitute?

A: Rds On determines conduction losses and heat generation. The original SPD18P06P specifies 130 mOhm at 13.2A, 10V. Substitute parts with similar Rds On values (110–150 mOhm range) maintain comparable thermal performance. Lower Rds On values reduce power dissipation; higher values increase heat generation.

Q: Can I use a substitute with lower continuous drain current rating?

A: Substitutes with lower Id ratings (12A to 15.5A) can be used only if your circuit's maximum drain current does not exceed the substitute's rating. Using a part rated below your circuit's actual current demand will cause overheating and device failure. Verify your application's peak and continuous current requirements before selection.

Q: What does "Active" product status mean?

A: Active status indicates the part is currently manufactured and available from the supplier. The original SPD18P06P is Obsolete, meaning it is no longer produced. All recommended substitutes are Active, ensuring long-term availability and supply chain reliability.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 Compliant certification, matching modern environmental and regulatory requirements. The original SPD18P06P does not specify RoHS status, but all active alternatives meet current compliance standards.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET on or off. Lower Qg values (17–20 nC) enable faster switching with lower gate drive power. Higher Qg values (27–33 nC) require more gate drive current but may offer other performance benefits. Select based on your gate driver's current capability and switching frequency requirements.

Q: Can I mix different substitute parts in the same circuit?

A: Mixing different MOSFET models in parallel or series configurations is not recommended without detailed thermal and electrical analysis. Differences in Rds On, Vgs(th), and gate charge can cause unequal current distribution and thermal stress. Use identical part numbers for redundant or parallel configurations.

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