SPD07N60S5 N-Channel 600V 7.3A MOSFET Equivalent & Substitute Parts

Part Overview

The SPD07N60S5 is an N-Channel 600V 7.3A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, packaged in TO-252-3 (DPAK) surface mount configuration. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 83W at the case temperature, making it suitable for high-voltage switching applications requiring moderate current handling.

Due to its obsolete status, equivalent substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capability, on-state resistance characteristics, and identical packaging format to ensure direct board-level replacement without design modification.

Key Parameters

Parameter	SPD07N60S5 Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7.3	A
On-State Resistance (Rds On Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5.5	V @ 350µA
Gate Charge (Qg Max) @ Vgs	35	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	970	pF @ 25V
Power Dissipation (Max)	83	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the SPD07N60S5 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support 7.3A or higher at 25°C case temperature
On-State Resistance (Rds On): Must not exceed 600 mOhm at specified gate voltage and current conditions
Package Format: Must be TO-252-3 (DPAK) surface mount configuration
FET Type: N-Channel topology
Technology: Metal Oxide MOSFET

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Operating range compatibility with existing gate drive circuits
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive current demands
Power Dissipation Rating: Must accommodate thermal requirements of the application
Operating Temperature Range: Must support -55°C to 150°C minimum

The substitute parts listed below satisfy all primary criteria and maintain compatibility within acceptable ranges for secondary parameters, enabling direct functional replacement in existing circuit designs.

Parameter Comparison

Parameter	SPD07N60S5	AOD7S60	STD10N60M2	STD10NM60N	STD9N60M2	STD9NM60N	Unit
Manufacturer	Infineon	Alpha & Omega	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Vdss	600	600	600	600	600	600	V
Id @ 25°C	7.3	7.0	7.5	10.0	5.5	6.5	A
Rds On (Max) @ 10V	600 @ 4.6A	600 @ 3.5A	600 @ 3.0A	550 @ 4.0A	780 @ 3.0A	745 @ 3.25A	mOhm
Vgs(th) (Max) @ Id	5.5 @ 350µA	3.9 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	4.0 @ 250µA	V
Qg (Max) @ 10V	35	8.2	13.5	19	10	17.4	nC
Vgs (Max)	±20	±30	±25	±25	±25	±25	V
Ciss (Max)	970 @ 25V	372 @ 100V	400 @ 100V	540 @ 50V	320 @ 100V	452 @ 50V	pF
Power Dissipation (Max)	83	83	85	70	60	70	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3	—
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Recommendation: STD10N60M2

The STD10N60M2 from STMicroelectronics represents the optimal substitute for the obsolete SPD07N60S5. This device maintains 600V Vdss rating with 7.5A continuous drain current, exceeding the original 7.3A specification. The on-state resistance of 600 mOhm at 3.0A and 10V gate voltage matches the SPD07N60S5 specification, ensuring equivalent switching performance and thermal characteristics. The STD10N60M2 carries Active product status with ROHS3 compliance, providing long-term design support and regulatory alignment. The MDmesh™ II Plus technology series delivers 85W maximum power dissipation, supporting the original 83W thermal requirement. Gate charge of 13.5 nC represents a moderate increase from the original 35 nC specification, requiring verification of gate drive circuit capability but remaining within typical design margins for 10V gate drive systems.

Secondary Recommendation: STD10NM60N

The STD10NM60N provides enhanced current handling at 10A continuous drain current with reduced on-state resistance of 550 mOhm at 4.0A and 10V. This device is suitable for applications requiring improved thermal performance or higher current margins. The 70W power dissipation rating is lower than the original specification, requiring thermal analysis for high-power applications. Gate charge of 19 nC and input capacitance of 540 pF at 50V represent moderate increases requiring gate drive circuit verification. Active product status and ROHS3 compliance ensure long-term availability.

Alternative for Current-Limited Applications: STD9NM60N

The STD9NM60N supports 6.5A continuous drain current with 745 mOhm on-state resistance at 3.25A and 10V. This device is appropriate for applications where the original 7.3A specification exceeds actual circuit requirements. The 70W power dissipation and Active product status with ROHS3 compliance provide design continuity. Gate charge of 17.4 nC and input capacitance of 452 pF require gate drive circuit compatibility verification.

Not Recommended: AOD7S60

While the AOD7S60 maintains 600V Vdss and 7.0A continuous drain current with matching 600 mOhm on-state resistance, its "Not For New Designs" product status indicates manufacturer discontinuation trajectory. This device should be avoided for new production designs despite technical compatibility.

Not Recommended: STD9N60M2

The STD9N60M2 supports only 5.5A continuous drain current, falling below the original 7.3A specification. This device is unsuitable for direct replacement in applications requiring the full current rating of the SPD07N60S5.

Frequently Asked Questions (FAQ)

Q: Can the STD10N60M2 be used as a direct drop-in replacement for the SPD07N60S5?

A: Yes. The STD10N60M2 maintains identical TO-252-3 (DPAK) packaging, 600V Vdss rating, and 600 mOhm on-state resistance specification. The 7.5A continuous drain current exceeds the original 7.3A requirement. No PCB modifications are required. Gate drive circuits designed for 10V operation are compatible. Verify gate charge specifications (13.5 nC vs. 35 nC original) with your gate drive circuit to confirm adequate drive current availability.

Q: What is the significance of the gate charge (Qg) difference between the SPD07N60S5 and substitute parts?

A: Gate charge determines the total charge required to switch the MOSFET from off to on state. The SPD07N60S5 specifies 35 nC at 10V, while substitute parts range from 8.2 nC (AOD7S60) to 19 nC (STD10NM60N). Lower gate charge reduces gate drive circuit current demands and switching losses. Verify that your gate drive circuit can supply sufficient current at the specified gate voltage to achieve the required switching speed. Most 10V gate drive circuits accommodate this variation without modification.

Q: Why do some substitute parts have lower power dissipation ratings than the original SPD07N60S5?

A: Power dissipation rating reflects the maximum thermal energy the device can safely dissipate at the case temperature. The STD10NM60N and STD9NM60N specify 70W versus the original 83W. This difference results from improved semiconductor technology and lower on-state resistance in newer device generations. For applications operating below 70W, these devices are fully suitable. For applications approaching or exceeding 70W dissipation, thermal analysis is required to confirm adequate heat sinking.

Q: Are all substitute parts RoHS compliant?

A: The SPD07N60S5 is RoHS non-compliant. All recommended substitute parts (STD10N60M2, STD10NM60N, STD9N60M2, STD9NM60N) are ROHS3 compliant. This compliance improvement may require verification with your procurement and regulatory requirements, particularly for products subject to RoHS directives in target markets.

Q: What is the difference between MDmesh™ II and MDmesh™ II Plus technology?

A: Both are STMicroelectronics MOSFET technology platforms optimized for 600V applications. MDmesh™ II Plus (used in STD10N60M2 and STD9N60M2) represents an enhanced generation with improved on-state resistance and gate charge characteristics. MDmesh™ II (used in STD10NM60N and STD9NM60N) provides higher current capability with slightly higher gate charge. Both technologies are compatible with the original SPD07N60S5 application requirements.

Q: Can the STD10NM60N be used in place of the STD10N60M2?

A: Both devices are functionally compatible as SPD07N60S5 substitutes. The STD10NM60N provides 10A versus 7.5A continuous current with lower on-state resistance (550 mOhm vs. 600 mOhm), making it suitable for applications requiring enhanced current margin or improved thermal performance. The STD10NM60N has higher gate charge (19 nC vs. 13.5 nC) and lower power dissipation rating (70W vs. 85W). Select based on your specific application's current and thermal requirements.

Q: Is the AOD7S60 suitable for new production designs?

A: No. The AOD7S60 carries "Not For New Designs" product status, indicating the manufacturer is discontinuing this device. While technically compatible with the SPD07N60S5, new designs should utilize STD10N60M2 or STD10NM60N to ensure long-term supply availability and design support.

Q: What packaging considerations apply to these substitute parts?

A: All substitute parts use TO-252-3 (DPAK) surface mount packaging, identical to the SPD07N60S5. This packaging format includes two leads plus a thermal tab for heat dissipation. No PCB layout modifications are required for direct replacement. Verify that your thermal management design (heat sink, thermal vias, copper area) accommodates the power dissipation of your selected substitute device.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message