SPB80N10L G N-Channel 100V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The SPB80N10L G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 80A continuous drain current at 25°C. This device is packaged in TO-263-3 (D2PAK) surface mount configuration with a maximum power dissipation of 250W. The part is discontinued at DiGi Electronics but remains available through inventory channels. Equivalent and substitute parts are necessary for design continuity, supply chain flexibility, and long-term product support when the original part reaches end-of-life status.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A
On-State Resistance (Rds On Max) @ 10V	14	mOhm
Gate Threshold Voltage (Vgs th) Max	2	V @ 2mA
Gate Charge (Qg) Max @ 10V	240	nC
Power Dissipation (Max)	250	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the SPB80N10L G is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Package Type: TO-263-3 (D2PAK) surface mount configuration
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C minimum
RoHS3 Compliance and REACH Unaffected status

Performance Compatibility Criteria:

Continuous Drain Current (Id): 61A or higher at 25°C
On-State Resistance (Rds On): 15mOhm or lower at 10V gate drive
Gate Charge (Qg): 240nC or lower at 10V
Power Dissipation: 140W or higher

All substitute parts listed meet the mandatory matching criteria. Performance variations in drain current, on-state resistance, and gate charge are acceptable within the specified ranges, as these parameters remain within functional limits for equivalent circuit operation.

Parameter Comparison

Parameter	SPB80N10L G	STB80NF10T4	FDB120N10	PSMN013-100BS,118	PSMN015-100B,118	IRFS4510TRLPBF
Manufacturer	Infineon	STMicroelectronics	onsemi	Nexperia USA Inc.	Nexperia USA Inc.	Infineon
Vdss (V)	100	100	100	100	100	100
Id @ 25°C (A)	80	80	74	68	75	61
Rds On Max @ 10V (mOhm)	14	15	12	13.9	15	13.9
Qg Max @ 10V (nC)	240	182	86	59	90	87
Power Dissipation Max (W)	250	300	170	170	300	140
Package	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK	PG-TO263-3
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Product Status	Discontinued	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitute: STB80NF10T4

The STB80NF10T4 from STMicroelectronics provides the closest electrical match to the SPB80N10L G. It maintains identical 100V/80A ratings, matching drain current specification exactly. On-state resistance is 15mOhm at 10V, within acceptable tolerance of the original 14mOhm specification. Gate charge is significantly lower at 182nC, providing improved switching performance. The part is in active production status with high inventory availability (15,265 units). RoHS3 compliance and REACH unaffected status are confirmed. This part is recommended as the first choice for direct replacement in new designs and existing production.

Secondary Substitute: PSMN015-100B,118

The PSMN015-100B,118 from Nexperia USA Inc. offers 75A continuous drain current with 100V rating. On-state resistance is 15mOhm at 10V, matching the STB80NF10T4 specification. Power dissipation capability is 300W, exceeding the original 250W rating. Gate charge is 90nC, providing superior switching characteristics. The part is in active production with 2,893 units in inventory. This substitute is suitable for applications where the 5A reduction in drain current does not impact circuit performance margins.

Tertiary Substitute: FDB120N10

The FDB120N10 from onsemi provides 74A continuous drain current with 100V rating. On-state resistance is 12mOhm at 10V, the lowest among all substitutes, offering improved efficiency. Power dissipation is 170W, lower than the original specification. Gate charge is 86nC. This part is in active production with the highest inventory availability (15,326 units). Selection of this part requires verification that 170W power dissipation is sufficient for the application thermal environment.

Quaternary Substitute: PSMN013-100BS,118

The PSMN013-100BS,118 from Nexperia USA Inc. provides 68A continuous drain current with 100V rating. On-state resistance is 13.9mOhm at 10V. Gate charge is 59nC, the lowest among all substitutes, enabling fastest switching transitions. Power dissipation is 170W. This part is in active production with 15,979 units in inventory. This substitute is appropriate for high-frequency switching applications where gate charge minimization is critical.

Quaternary Substitute: IRFS4510TRLPBF

The IRFS4510TRLPBF from Infineon provides 61A continuous drain current with 100V rating. On-state resistance is 13.9mOhm at 10V. Gate charge is 87nC. Power dissipation is 140W, the lowest among all substitutes. This part is in active production with 4,100 units in inventory. Selection of this part requires confirmation that 61A drain current and 140W power dissipation are adequate for the application requirements.

All substitute parts are RoHS3 compliant and REACH unaffected, meeting regulatory requirements equivalent to the original SPB80N10L G.

Frequently Asked Questions (FAQ)

Q1: Can I use STB80NF10T4 as a direct replacement for SPB80N10L G without circuit modifications?

A: Yes. The STB80NF10T4 maintains identical 100V/80A electrical ratings and TO-263-3 (D2PAK) package configuration. Pin assignments are compatible. Gate charge is lower (182nC vs. 240nC), which improves switching performance without requiring circuit changes. No modifications are necessary for direct substitution.

Q2: What is the primary difference between the substitute parts?

A: The substitute parts vary in continuous drain current (61A to 80A), on-state resistance (12mOhm to 15.9mOhm), and gate charge (59nC to 182nC). All maintain the 100V voltage rating and TO-263-3 package. Selection depends on whether the application requires maximum current handling (STB80NF10T4 at 80A) or optimized switching performance (PSMN013-100BS,118 with 59nC gate charge).

Q3: Why is the SPB80N10L G discontinued if suitable alternatives exist?

A: Product discontinuation reflects manufacturer production decisions and market demand shifts. Infineon has transitioned to newer MOSFET generations with improved performance characteristics. The STB80NF10T4 and other active alternatives provide equivalent or superior performance, making the original part obsolete from a manufacturing perspective.

Q4: Are all substitute parts available in the same packaging?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, which is mechanically and electrically compatible with the original SPB80N10L G. Printed circuit board layouts require no modification for package accommodation.

Q5: Which substitute part should I select for a new design?

A: For new designs, STB80NF10T4 is recommended as the primary choice due to matching 80A drain current specification and active production status. If gate charge minimization is critical for high-frequency switching applications, PSMN013-100BS,118 offers the lowest gate charge (59nC). If maximum power dissipation capability is required, PSMN015-100B,118 provides 300W rating.

Q6: Do all substitute parts meet RoHS3 and REACH compliance requirements?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, meeting regulatory requirements equivalent to the original SPB80N10L G. Compliance documentation is available from each manufacturer.

Q7: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (measured in nanofarads) reduces the charge required to switch the MOSFET on and off, enabling faster switching transitions and reduced switching losses. This improves overall circuit efficiency and thermal performance. Applications operating at high switching frequencies benefit most from lower gate charge specifications.

Q8: Can I use IRFS4510TRLPBF if my application requires only 61A maximum current?

A: Yes. If your circuit design requires a maximum of 61A continuous drain current, IRFS4510TRLPBF is a valid substitute. The 100V voltage rating and TO-263-3 package remain compatible. Verify that 140W power dissipation is sufficient for your thermal environment.

Q9: What thermal considerations apply when selecting a substitute part?

A: Power dissipation ratings vary among substitutes (140W to 300W). Select a part with power dissipation equal to or exceeding your application's calculated thermal load. Lower on-state resistance (Rds On) reduces conduction losses and heat generation. Verify that your PCB thermal design (copper area, thermal vias, heatsinking) accommodates the selected part's power dissipation.

Q10: Are there any gate drive voltage differences between substitute parts?

A: All substitute parts operate with ±20V maximum gate-source voltage and are driven at 10V for on-state resistance specification. Gate threshold voltage (Vgs th) varies slightly (2V to 4.5V), but this does not affect compatibility with standard gate drive circuits designed for 10V operation.

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