SPB80N06S2L-09 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The SPB80N06S2L-09 is an N-Channel 55V 80A surface mount MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is rated for 190W power dissipation and features a TO-263-3 (D2PAK) package configuration. The part is currently classified as obsolete, making equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and surface mount packaging to ensure functional equivalence in existing circuit applications.

Substiute Parts

SPB80N06S2L-09
Infineon TechnologiesIn Stock: 1146SPB80N06S2L-09 Datasheet
SPB80N06S2L-09
Current Part
PSMN015-60BS,118
Nexperia USA Inc.In Stock: 12771PSMN015-60BS,118 Datasheet
PSMN015-60BS,118
MFR Recommended
PSMN7R6-60BS,118
Nexperia USA Inc.In Stock: 8919PSMN7R6-60BS,118 Datasheet
PSMN7R6-60BS,118
MFR Recommended
STB130N6F7
STMicroelectronicsIn Stock: 21323STB130N6F7 Datasheet
STB130N6F7
MFR Recommended
STB140NF55T4
STMicroelectronicsIn Stock: 15448STB140NF55T4 Datasheet
STB140NF55T4
MFR Recommended
STB85NF55LT4
STMicroelectronicsIn Stock: 2222STB85NF55LT4 Datasheet
STB85NF55LT4
MFR Recommended
STB85NF55T4
STMicroelectronicsIn Stock: 29424STB85NF55T4 Datasheet
STB85NF55T4
MFR Recommended

Key Parameters

Parameter SPB80N06S2L-09 Unit
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 80 A (Tc)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 52A, 10V mOhm
Gate Charge (Qg) @ Vgs 105 nC @ 10V
Power Dissipation (Max) 190 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-263-3, D2PAK Surface Mount
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the SPB80N06S2L-09 is determined by the following critical parameters:

Primary Substitution Criteria:

  • Drain-Source Voltage (Vdss): Minimum 55V required; higher voltage ratings (60V) are acceptable
  • Continuous Drain Current (Id): Minimum 80A required at 25°C; equal or higher ratings are acceptable
  • On-Resistance (Rds On): Maximum 8.5 mOhm at rated conditions; lower values are acceptable
  • Package Type: TO-263-3 or D2PAK surface mount configuration required
  • Operating Temperature: -55°C to 175°C range required
  • Gate Charge (Qg): Values up to approximately 150 nC are acceptable for circuit compatibility

Substitution Logic: Parts are grouped into two categories based on voltage and current ratings:

Category A - Direct Voltage/Current Match (55V, 80A): STB85NF55T4, STB85NF55LT4, and STB140NF55T4 maintain the exact 55V/80A specification with improved or equivalent on-resistance and power dissipation characteristics.

Category B - Voltage Elevation with Current Maintenance (60V, 80A+): STB130N6F7 and PSMN7R6-60BS,118 provide 60V voltage rating with 80A or higher current capability, suitable for applications where voltage headroom is beneficial. PSMN015-60BS,118 provides 60V/50A, acceptable where current requirements do not exceed 50A.

All substitute parts maintain D2PAK packaging, surface mount configuration, and operating temperature range compatibility with the original device.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Pd Max (W) Package Status
SPB80N06S2L-09 Infineon 55 80 8.5 @ 52A, 10V 105 @ 10V 190 D2PAK Obsolete
STB85NF55T4 STMicroelectronics 55 80 8 @ 40A, 10V 150 @ 10V 300 D2PAK Active
STB85NF55LT4 STMicroelectronics 55 80 8 @ 40A, 10V 110 @ 5V 300 D2PAK Active
STB140NF55T4 STMicroelectronics 55 80 8 @ 40A, 10V 142 @ 10V 300 D2PAK Active
STB130N6F7 STMicroelectronics 60 80 5 @ 40A, 10V 42 @ 10V 160 D2PAK Active
PSMN7R6-60BS,118 Nexperia USA Inc. 60 92 7.8 @ 25A, 10V 38.7 @ 10V 149 D2PAK Active
PSMN015-60BS,118 Nexperia USA Inc. 60 50 14.8 @ 15A, 10V 20.9 @ 10V 86 D2PAK Active

Engineering Selection Recommendations

Primary Recommendation - STB85NF55T4 (STMicroelectronics): This part provides exact voltage and current specification match (55V, 80A) with improved on-resistance (8 mOhm vs. 8.5 mOhm) and significantly higher power dissipation rating (300W vs. 190W). The device is in active production status with RoHS3 compliance. This is the preferred direct replacement for the obsolete SPB80N06S2L-09.

Secondary Recommendation - STB85NF55LT4 (STMicroelectronics): Identical electrical specifications to STB85NF55T4 with dual gate drive voltage support (5V and 10V). Suitable for applications requiring lower gate drive voltage operation. Active production status with RoHS3 compliance.

Alternative Recommendation - STB140NF55T4 (STMicroelectronics): Maintains 55V/80A specification with highest power dissipation rating (300W). Suitable for high-power applications. Active production status with RoHS3 compliance.

Voltage-Elevated Alternative - STB130N6F7 (STMicroelectronics): Provides 60V rating with 80A current and superior on-resistance (5 mOhm). Recommended where circuit design permits higher voltage rating and improved efficiency is required. Active production status with RoHS3 compliance.

High-Current Alternative - PSMN7R6-60BS,118 (Nexperia USA Inc.): Offers 60V/92A specification with lower on-resistance (7.8 mOhm) and reduced gate charge (38.7 nC). Suitable for applications requiring current capability above 80A. Active production status with RoHS3 compliance.

Current-Limited Alternative - PSMN015-60BS,118 (Nexperia USA Inc.): Provides 60V/50A specification. Suitable only for applications where continuous drain current does not exceed 50A. Active production status with RoHS3 compliance.

All recommended substitutes maintain surface mount D2PAK packaging, -55°C to 175°C operating temperature range, and ±20V gate voltage specification compatibility with the original SPB80N06S2L-09.

Frequently Asked Questions (FAQ)

Q1: Can STB85NF55T4 directly replace SPB80N06S2L-09 without circuit modification?

A: Yes. STB85NF55T4 maintains identical voltage (55V) and current (80A) specifications with improved on-resistance and power dissipation. The D2PAK package pinout is compatible. No circuit modification is required.

Q2: What is the difference between STB85NF55T4 and STB85NF55LT4?

A: Both devices share 55V/80A specifications and 8 mOhm on-resistance. STB85NF55LT4 supports dual gate drive voltages (5V and 10V) with lower gate charge at 5V operation (110 nC vs. 150 nC). Select STB85NF55LT4 if your circuit uses 5V gate drive.

Q3: Why is STB130N6F7 rated at 60V instead of 55V?

A: STB130N6F7 is designed with higher voltage rating (60V) to provide additional voltage margin in circuit design. The 80A current specification matches the original part. Higher voltage rating does not affect compatibility in 55V-rated circuits; it provides additional safety margin.

Q4: Can PSMN015-60BS,118 replace SPB80N06S2L-09?

A: PSMN015-60BS,118 is not recommended as a direct replacement. This part is rated for only 50A continuous drain current, which is below the 80A requirement of the original SPB80N06S2L-09. Use only in applications where current does not exceed 50A.

Q5: Are all substitute parts RoHS compliant?

A: Yes. All recommended substitute parts (STB85NF55T4, STB85NF55LT4, STB140NF55T4, STB130N6F7, PSMN7R6-60BS,118, and PSMN015-60BS,118) are RoHS3 compliant. The original SPB80N06S2L-09 is RoHS non-compliant.

Q6: What is the package compatibility between SPB80N06S2L-09 and substitute parts?

A: All substitute parts use TO-263-3 or D2PAK surface mount package configuration. Pin assignments are compatible. PCB layout modifications are not required for package substitution.

Q7: Which substitute part offers the lowest on-resistance?

A: STB130N6F7 provides the lowest on-resistance at 5 mOhm (measured at 40A, 10V gate voltage). This results in lower power dissipation and improved thermal performance compared to the original 8.5 mOhm specification.

Q8: Can substitute parts operate at the same temperature range as SPB80N06S2L-09?

A: Yes. All substitute parts maintain the -55°C to 175°C operating temperature range (TJ) specified for the original device.

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