SPA07N60CFDXKSA1 Equivalent & Substitute Parts

Part Overview

The SPA07N60CFDXKSA1 is an N-Channel 650V 6.6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 32W power dissipation and features a TO-220-3 Full Pack through-hole package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within the specified electrical and mechanical parameters.

Substiute Parts

SPA07N60CFDXKSA1
Infineon TechnologiesIn Stock: 1120SPA07N60CFDXKSA1 Datasheet
SPA07N60CFDXKSA1
Current Part
AOTF11N62L
Alpha & Omega Semiconductor Inc.In Stock: 3133AOTF11N62L Datasheet
AOTF11N62L
MFR Recommended
IXTP4N70X2M
IXYSIn Stock: 1041IXTP4N70X2M Datasheet
IXTP4N70X2M
MFR Recommended
STF10N95K5
STMicroelectronicsIn Stock: 6077STF10N95K5 Datasheet
STF10N95K5
MFR Recommended
STF10NM60ND
STMicroelectronicsIn Stock: 15463STF10NM60ND Datasheet
STF10NM60ND
MFR Recommended
STF11N65M2
STMicroelectronicsIn Stock: 19089STF11N65M2 Datasheet
STF11N65M2
MFR Recommended
STF8N65M5
STMicroelectronicsIn Stock: 16281STF8N65M5 Datasheet
STF8N65M5
MFR Recommended
STF8NM60ND
STMicroelectronicsIn Stock: 3079STF8NM60ND Datasheet
STF8NM60ND
MFR Recommended
STF9NM60N
STMicroelectronicsIn Stock: 5151STF9NM60N Datasheet
STF9NM60N
MFR Recommended
STP10NK70ZFP
STMicroelectronicsIn Stock: 5730STP10NK70ZFP Datasheet
STP10NK70ZFP
MFR Recommended
TK9A60D(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 944TK9A60D(STA4,Q,M) Datasheet
TK9A60D(STA4,Q,M)
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 6.6 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 700 mOhm @ 4.6A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 5 V @ 300µA
Gate Charge (Qg Max) @ Vgs 47 nC @ 10V
Power Dissipation (Max) 32 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Full Pack Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Class Compatibility: Drain-Source voltage (Vdss) must equal or exceed 650V to maintain dielectric integrity in the application circuit.

Current Capacity: Continuous drain current (Id) must meet or exceed 6.6A at 25°C to ensure thermal stability and prevent device derating.

On-State Resistance (Rds On): Maximum on-state resistance at specified gate voltage (10V) must not significantly exceed 700 mOhm to maintain power dissipation within acceptable limits.

Gate Charge (Qg): Gate charge characteristics affect switching speed and driver requirements. Values within the range of 12.5 nC to 90 nC are acceptable for circuit compatibility.

Power Dissipation: Maximum power rating must support the thermal requirements of the application, with 25W to 45W ratings acceptable for equivalent operation.

Package and Mounting: All substitutes must use TO-220-3 Full Pack through-hole configuration to ensure mechanical and thermal interface compatibility.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Qg Max (nC) Power (W) Status Package
SPA07N60CFDXKSA1 Infineon 650 6.6 700 @ 4.6A, 10V 47 @ 10V 32 Obsolete TO-220-3 FP
STF11N65M2 STMicroelectronics 650 7 670 @ 3.5A, 10V 12.5 @ 10V 25 Active TO-220-3 FP
STF8N65M5 STMicroelectronics 650 7 600 @ 3.5A, 10V 15 @ 10V 25 Active TO-220-3 FP
STF9NM60N STMicroelectronics 600 6.5 745 @ 3.25A, 10V 17.4 @ 10V 25 Active TO-220-3 FP
STF10NM60ND STMicroelectronics 600 8 550 @ 4A, 10V 19 @ 10V 25 Active TO-220-3 FP
STF8NM60ND STMicroelectronics 600 7 700 @ 3.5A, 10V 22 @ 10V 25 Active TO-220-3 FP
AOTF11N62L Alpha & Omega Semiconductor 620 11 650 @ 5.5A, 10V 37 @ 10V 39 Active TO-220-3 FP
IXTP4N70X2M IXYS 700 4 850 @ 2A, 10V 11.8 @ 10V 30 Active TO-220-3 FP
STF10N95K5 STMicroelectronics 950 8 800 @ 4A, 10V 22 @ 10V 30 Active TO-220-3 FP
STP10NK70ZFP STMicroelectronics 700 8.6 850 @ 4.5A, 10V 90 @ 10V 35 Active TO-220-3 FP
TK9A60D(STA4,Q,M) Toshiba Semiconductor 600 9 830 @ 4.5A, 10V 24 @ 10V 45 Active TO-220-3 FP

Engineering Selection Recommendations

Primary Equivalent (Closest Match): STF11N65M2 from STMicroelectronics provides the closest electrical equivalence to the SPA07N60CFDXKSA1. This part maintains 650V Vdss rating, delivers 7A continuous drain current, and features comparable on-state resistance of 670 mOhm. The device is active in production status with full ROHS3 compliance and unlimited moisture sensitivity rating. The MDmesh™ II Plus technology series ensures reliable long-term availability.

High-Current Alternative: AOTF11N62L from Alpha & Omega Semiconductor offers enhanced current capacity at 11A with 620V Vdss rating. This part is suitable for applications requiring higher current margins. Power dissipation rating of 39W exceeds the original specification, providing thermal headroom. Active production status and ROHS3 compliance confirm long-term supply viability.

Voltage-Elevated Options: STF10N95K5 (950V) and STP10NK70ZFP (700V) provide higher voltage ratings for applications requiring enhanced dielectric margin. Both devices maintain active production status and ROHS3 compliance. These parts are appropriate when circuit topology permits higher voltage operation without performance degradation.

Lower-Voltage Alternatives: STF9NM60N, STF10NM60ND, and STF8NM60ND operate at 600V Vdss, suitable for applications where 650V rating is not mandatory. All three maintain active status with ROHS3 compliance. Current ratings range from 6.5A to 8A, accommodating various load requirements.

All recommended substitutes are active production components with ROHS3 compliance and REACH unaffected status, ensuring regulatory compliance and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can STF11N65M2 directly replace SPA07N60CFDXKSA1 without circuit modification?

A: STF11N65M2 maintains identical 650V Vdss rating and comparable on-state resistance characteristics. The TO-220-3 Full Pack package provides identical pinout and thermal interface. No circuit modification is required for direct substitution in applications operating within the original design parameters.

Q: What is the significance of gate charge (Qg) differences between the original part and substitutes?

A: Gate charge affects switching speed and driver current requirements. The original SPA07N60CFDXKSA1 specifies 47 nC at 10V. Substitutes range from 12.5 nC to 90 nC. Lower gate charge values (STF11N65M2 at 12.5 nC) enable faster switching with reduced driver stress. Higher values (STP10NK70ZFP at 90 nC) require proportionally higher driver current but do not prevent substitution if the driver circuit is rated accordingly.

Q: Are 600V-rated parts acceptable substitutes for a 650V application?

A: 600V-rated substitutes (STF9NM60N, STF10NM60ND, STF8NM60ND) operate at reduced voltage margin. These parts are acceptable only if the application circuit operates at or below 600V maximum. If the design requires 650V dielectric withstand capability, 600V parts are not suitable.

Q: What is the impact of on-state resistance (Rds On) variation on circuit performance?

A: On-state resistance directly affects power dissipation and thermal performance. The original part specifies 700 mOhm maximum. Substitutes range from 550 mOhm to 850 mOhm. Lower resistance values (STF10NM60ND at 550 mOhm) reduce power loss and heat generation. Higher values (IXTP4N70X2M at 850 mOhm) increase power dissipation proportionally. Selection depends on thermal design margins and application duty cycle.

Q: Does package type variation affect mechanical compatibility?

A: All recommended substitutes use TO-220-3 Full Pack through-hole configuration, ensuring identical mechanical interface, PCB footprint, and thermal coupling to heatsinks. Package compatibility is confirmed across all alternatives.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory profile of the original SPA07N60CFDXKSA1. Moisture sensitivity level (MSL) is rated at 1 (Unlimited) for all parts, indicating no special storage or handling requirements.

Q: Can higher-voltage parts (STF10N95K5 at 950V) be used in a 650V application?

A: Higher voltage-rated parts operate safely in lower-voltage applications. The 950V Vdss rating of STF10N95K5 provides enhanced dielectric margin. However, this part exhibits higher on-state resistance (800 mOhm) and increased gate charge (22 nC), which may affect circuit efficiency and switching characteristics. Use is acceptable if thermal and switching performance remain within design specifications.

Q: What is the production status significance for long-term supply planning?

A: The original SPA07N60CFDXKSA1 is classified as obsolete, indicating discontinued production. All recommended substitutes are active production components, ensuring availability for current and future procurement. Active status confirms manufacturer commitment to supply continuity and technical support.

Request Quote (Ships tomorrow)