SIR892DP-T1-GE3 Equivalent & Substitute Parts Reference

Part Overview

The SIR892DP-T1-GE3 is an N-channel MOSFET supplied by Vishay Siliconix. It features a drain-to-source voltage of 25 V, continuous drain current up to 50A (Tc), and is housed in the PowerPAK® SO-8 surface mount package. Notable parameters include maximum Rds(on) values of 3.2mOhm @ 10A, 10V, and a gate charge (Qg) of 60 nC @ 10 V. The part is categorized as obsolete, increasing the necessity to identify alternate models for design continuity and inventory management. Equivalent and substitute parts must meet the defined electrical and mechanical criteria.

Key Parameters

Parameter	Value
Manufacturer	Vishay Siliconix
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2645 pF @ 10 V
Power Dissipation (Max)	5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MOSFET SIR892DP-T1-GE3 are selected strictly based on the following allowed and matching parametric criteria:

MOSFET category and N-channel FET type
Drain-to-source voltage (Vdss) equal to or greater than 25 V
Continuous drain current (Id) at 25°C equal to or greater than 50A (Tc) or as specified by manufacturer
Drive voltage compatible with the main part specification (4.5V, 10V)
Maximum Rds(on) at the relevant test conditions (10A or higher, Vgs = 10V)
Threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss) within comparable range
Power dissipation capability for both Ta and Tc in surface-mount packages
Matching or equivalent mechanical package type and footprint to ensure design drop-in capability
RoHS and moisture sensitivity compliance status

All substitute parts are provided in the input list and match the above constraints as per the provided information.

Parameter Comparison

Parameter	SIR892DP-T1-GE3	SIRC10DP-T1-GE3	CSD16403Q5A	CSD16407Q5
Manufacturer	Vishay Siliconix	Vishay Siliconix	Texas Instruments	Texas Instruments
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	25 V	30 V	25 V	25 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)	60A (Tc)	28A (Ta), 100A (Tc)	31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 10A, 10V	3.5mOhm @ 10A, 10V	2.8mOhm @ 20A, 10V	2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA	2.4V @ 250µA	1.9V @ 250µA	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V	36 nC @ 10 V	18 nC @ 4.5 V	18 nC @ 4.5 V
Vgs (Max)	±20V	+20V, -16V	+16V, -12V	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	2645 pF @ 10 V	1873 pF @ 15 V	2660 pF @ 12.5 V	2660 pF @ 12.5 V
Power Dissipation (Max)	5W (Ta), 50W (Tc)	43W (Tc)	3.1W (Ta)	3.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	PowerPAK® SO-8	PowerPAK® SO-8	8-PowerTDFN	8-PowerTDFN
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

The SIR892DP-T1-GE3 MOSFET is classified as obsolete. The substitute parts listed—including SIRC10DP-T1-GE3, CSD16403Q5A, and CSD16407Q5—are all active or available status and are ROHS3 Compliant, with Moisture Sensitivity Level 1 (Unlimited). Parameter values should be confirmed against specified requirements for compliance and regulatory needs. Suitable substitutes are determined strictly from the parts listed in the provided data set.

Frequently Asked Questions (FAQ)

Q1: What are the main electrical criteria for substituting SIR892DP-T1-GE3?
A1: Substitute parts must have comparable or higher drain-to-source voltage, continuous drain current, and similar or lower Rds(on), with drive voltage and threshold voltage in the allowed range.

Q2: Are all substitute parts compatible in terms of surface mount packaging?
A2: Substitute parts share surface mount-type and similar package/case as specified (PowerPAK® SO-8 or equivalent 8-power TDFN as listed), which supports board-level replacement.

Q3: How is RoHS and compliance status ensured between the main part and listed substitutes?
A3: All listed parts are ROHS3 Compliant as indicated in the provided parameters, supporting direct substitutions where RoHS is a design requirement.

Q4: How are Ta and Tc (ambient and case) current and power dissipation ratings handled in selection?
A4: Substitute selection uses the manufacturer-provided ratings for continuous drain current and power dissipation at Ta and Tc as listed in the parameters.

Q5: Are there differences in input capacitance or gate charge between substitute models?
A5: Substitute models show variation in gate charge and input capacitance; selected parts remain within the ranges defined in the input, and such differences should be verified against application-specific timing requirements.

Q6: Do package or case differences affect direct substitution?
A6: Substitute parts are specified as surface mount, and package/case is indicated in the parameters for mechanical compatibility. For replacements, confirm that the PCB footprint matches the listed package/case.

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