SIR804DP-T1-GE3 Equivalent & Substitute Parts

Part Overview

The SIR804DP-T1-GE3 is an N-Channel 100V 60A MOSFET manufactured by Vishay Siliconix in the TrenchFET® series. This surface mount power transistor is housed in a PowerPAK® SO-8 package and is designed for high-current switching applications requiring 100V drain-to-source voltage capability. The device is Active status and RoHS3 compliant with unlimited moisture sensitivity rating.

Substitute parts are necessary when the primary device is unavailable, when alternative packaging formats are required for manufacturing compatibility, or when design optimization calls for different thermal or electrical characteristics within the same functional class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	60	A (Tc)
RDS(on) Max @ 20A, 10V	7.2	mOhm
Gate Threshold Voltage (Vgs(th)) Max @ 250µA	3	V
Gate Charge (Qg) Max @ 10V	76	nC
Input Capacitance (Ciss) Max @ 50V	2450	pF
Power Dissipation Max (Tc)	104	W
Operating Temperature Range	-55 to 150	°C (TJ)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Mounting Type	Surface Mount
Package	PowerPAK® SO-8

Substitute Part Grouping Explanation

Substitution of the SIR804DP-T1-GE3 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
N-Channel FET topology
MOSFET technology (Metal Oxide)
Surface mount configuration
Operating temperature range: -55°C to 150°C minimum

Performance Compatibility Criteria:

Continuous drain current (Id): 60A or greater at rated conditions
RDS(on) characteristics: 7.2mOhm or lower at specified gate voltage
Gate charge (Qg): 76nC or lower for switching speed compatibility
Input capacitance (Ciss): 2450pF or lower for gate drive circuit compatibility

Regulatory & Compliance Criteria:

RoHS3 compliance required
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Active product status

The substitute parts listed below meet these criteria with variations in package format, current rating, and thermal characteristics. Package differences (PowerPAK® SO-8 versus TDSON-8, VSON, HSOP, or PowerFlat) require PCB layout verification but do not affect electrical substitution eligibility.

Parameter Comparison

Parameter	SIR804DP-T1-GE3 (Main)	BSC060N10NS3GATMA1	BSC070N10NS3GATMA1	CSD19531Q5AT	FDMS86101DC	RS6P100BHTB1	STL100N10F7
Manufacturer	Vishay Siliconix	Infineon Technologies	Infineon Technologies	Texas Instruments	onsemi	Rohm Semiconductor	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100
Id @ 25°C (A)	60 (Tc)	90 (Tc)	90 (Tc)	100 (Ta)	60 (Tc)	100 (Tc)	80 (Tc)
RDS(on) Max (mOhm)	7.2 @ 20A, 10V	6 @ 50A, 10V	7 @ 50A, 10V	6.4 @ 16A, 10V	7.5 @ 14.5A, 10V	5.9 @ 90A, 10V	7.3 @ 19A, 10V
Vgs(th) Max (V)	3 @ 250µA	3.5 @ 90µA	3.5 @ 75µA	3.3 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 250µA
Qg Max (nC)	76 @ 10V	68 @ 10V	55 @ 10V	48 @ 10V	44 @ 10V	45 @ 10V	80 @ 10V
Ciss Max (pF)	2450 @ 50V	4900 @ 50V	4000 @ 50V	3870 @ 50V	3135 @ 50V	2880 @ 50V	5680 @ 50V
Power Dissipation Max (W)	104 (Tc)	125 (Tc)	114 (Tc)	125 (Tc)	125 (Tc)	104 (Tc)	100 (Tc)
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package Type	PowerPAK® SO-8	8-PowerTDFN (PG-TDSON-8-1)	8-PowerTDFN (PG-TDSON-8-1)	8-PowerTDFN (8-VSONP 5x6)	8-PowerTDFN (8-PQFN 5x6)	8-PowerTDFN (8-HSOP)	8-PowerVDFN (PowerFlat™ 5x6)
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts maintain Active product status and RoHS3 compliance, ensuring long-term availability and regulatory conformance equivalent to the SIR804DP-T1-GE3.

BSC060N10NS3GATMA1 and BSC070N10NS3GATMA1 (Infineon OptiMOS™): These devices exceed the drain current specification (90A) and provide lower gate charge (68nC and 55nC respectively), enabling faster switching characteristics. The TDSON-8 package differs from PowerPAK® SO-8, requiring PCB layout modification. Both devices are available in high inventory quantities.

CSD19531Q5AT (Texas Instruments NexFET™): This device provides the highest drain current rating (100A) with the lowest gate charge (48nC) and lowest RDS(on) at specified test conditions (6.4mOhm). The 8-VSONP package requires layout verification. Inventory availability is moderate.

FDMS86101DC (onsemi Dual Cool™/PowerTrench®): This device maintains the 60A continuous drain current specification with equivalent RDS(on) characteristics (7.5mOhm). The 8-PQFN package format differs from the original. High inventory availability supports supply chain continuity.

RS6P100BHTB1 (Rohm Semiconductor): This device provides 100A continuous drain current with superior RDS(on) performance (5.9mOhm @ 90A, 10V). The 8-HSOP package requires PCB layout adaptation. Inventory availability is adequate.

STL100N10F7 (STMicroelectronics STripFET™ VII): This device provides 80A continuous drain current with extended operating temperature range (-55°C to 175°C). Gate charge is slightly elevated (80nC). The PowerFlat™ package differs from the original. Inventory availability is excellent.

Frequently Asked Questions (FAQ)

Q: Can I directly replace SIR804DP-T1-GE3 with any of these substitute parts without PCB modification?

A: No. While all substitute parts are electrically compatible at the circuit level, package format differences require PCB layout verification. The original SIR804DP-T1-GE3 uses PowerPAK® SO-8 packaging. Substitute parts use alternative 8-pin power packages (TDSON-8, VSON, HSOP, PQFN, PowerFlat). Footprint, thermal via placement, and lead spacing differ. PCB layout must be adapted to the selected substitute package.

Q: What is the primary advantage of substituting with BSC070N10NS3GATMA1?

A: The BSC070N10NS3GATMA1 provides 90A continuous drain current (50% higher than the original 60A specification) with significantly lower gate charge (55nC versus 76nC). This enables faster switching transitions and reduced gate drive power dissipation. The lower input capacitance (4000pF versus 2450pF) may require gate drive circuit adjustment.

Q: Are all substitute parts suitable for high-frequency switching applications?

A: Gate charge and input capacitance determine switching speed capability. The CSD19531Q5AT offers the lowest gate charge (48nC) and is optimal for high-frequency applications. The STL100N10F7 has the highest gate charge (80nC) and is suitable for moderate-frequency switching. Application-specific gate drive circuit design is required.

Q: Which substitute part provides the best thermal performance?

A: The CSD19531Q5AT and FDMS86101DC both specify 125W maximum power dissipation at Tc, exceeding the original 104W specification. The BSC070N10NS3GATMA1 provides 114W. Thermal performance depends on PCB copper area, thermal vias, and ambient conditions. Package thermal resistance varies by design; consult manufacturer datasheets for specific thermal resistance values (θJA and θJC).

Q: Do all substitute parts have the same gate threshold voltage?

A: No. The original SIR804DP-T1-GE3 specifies 3V maximum at 250µA. Substitute parts range from 3V (CSD19531Q5AT) to 4V (FDMS86101DC, RS6P100BHTB1, STL100N10F7). Higher threshold voltages require higher gate drive voltage to achieve full on-state conduction. Gate drive circuit design must accommodate this variation.

Q: Which substitute part has the lowest on-state resistance?

A: The RS6P100BHTB1 provides the lowest RDS(on) at 5.9mOhm when measured at 90A and 10V gate voltage. The CSD19531Q5AT provides 6.4mOhm at 16A and 10V. Lower on-state resistance reduces conduction losses and heat generation in high-current applications.

Q: Are all substitute parts available in tape and reel packaging?

A: Packaging format availability varies. BSC070N10NS3GATMA1 and RS6P100BHTB1 are specified as Tape & Reel (TR). BSC060N10NS3GATMA1, CSD19531Q5AT, FDMS86101DC, and STL100N10F7 are available in Cut Tape (CT) & Digi-Reel® format. Verify packaging availability with component suppliers for production requirements.

Q: Can I use RS3L045GNGZETB or RS1L145GNTB as substitutes?

A: No. These devices operate at 60V maximum drain-to-source voltage, which is insufficient for 100V applications. They are not electrically compatible with the SIR804DP-T1-GE3 and cannot be used as substitutes in circuits requiring 100V voltage rating.

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