SIR-56ST3FF Infrared Emitter - Equivalent & Substitute Parts

Part Overview

The SIR-56ST3FF is a through-hole infrared emitter manufactured by Rohm Semiconductor, designed for 950nm wavelength applications with a maximum forward current of 100mA. This component is classified as obsolete, making identification of suitable substitute parts essential for ongoing system support and new design implementations. The part operates across the industrial temperature range of -25°C to 85°C and is housed in a T 1 3/4 package format.

Substiute Parts

SIR-56ST3FF

Rohm SemiconductorIn Stock: 978SIR-56ST3FF Datasheet

Current PartRFQ

SIR-563ST3FN

Rohm SemiconductorIn Stock: 2941SIR-563ST3FN Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for infrared emitters is determined by the following critical parameters:

• Package / Case: T 1 3/4 (physical and mechanical compatibility)
• Mounting Type: Through Hole (PCB assembly compatibility)
• Current - DC Forward (If) (Max): 100mA (circuit design compatibility)
• Operating Temperature Range: -25°C ~ 85°C (environmental compatibility)
• Viewing Angle: 30° (optical performance compatibility)

The SIR-563ST3FN qualifies as a substitute based on matching all critical parameters. While the wavelength differs (940nm versus 950nm) and radiant intensity increases (9mW/sr versus 5.6mW/sr), these variations remain within the functional tolerance of infrared emitter applications where near-infrared wavelengths in the 940-950nm range are interchangeable for most receiver systems.

Parameter Comparison

Engineering Selection Recommendations

The SIR-563ST3FN is the designated substitute for the obsolete SIR-56ST3FF. Both components maintain identical compliance certifications (ROHS3 Compliant, REACH Unaffected, EAR99 classification). The SIR-563ST3FN carries active product status, ensuring continued availability and manufacturing support. The forward voltage differential of 0.04V and increased radiant intensity of the substitute part are within acceptable operational margins for infrared emitter circuits. The 10nm wavelength shift (950nm to 940nm) does not compromise functional compatibility in standard infrared receiver applications.

Frequently Asked Questions (FAQ)

Q: Can the SIR-563ST3FN directly replace the SIR-56ST3FF in existing designs?

A: Yes. Both components share identical package format (T 1 3/4), mounting type (Through Hole), maximum forward current (100mA), viewing angle (30°), and operating temperature range (-25°C ~ 85°C). Pin configuration and mechanical dimensions are compatible.

Q: What is the significance of the wavelength difference between 950nm and 940nm?

A: Both wavelengths fall within the near-infrared spectrum and are standard for infrared receiver systems. The 10nm difference does not affect compatibility with standard IR receiver photodiodes or phototransistors designed for the 940-950nm band.

Q: How does the increased radiant intensity of the SIR-563ST3FN affect circuit performance?

A: The SIR-563ST3FN produces 9mW/sr compared to 5.6mW/sr for the SIR-56ST3FF at 50mA. This higher output intensity provides improved signal margin and may reduce required forward current for equivalent receiver response, potentially lowering power consumption.

Q: Are there compliance or regulatory differences between these parts?

A: No. Both components are ROHS3 Compliant, REACH Unaffected, and classified as EAR99 for export control purposes. Regulatory and environmental compliance are identical.

Q: What is the inventory status of these parts?

A: The SIR-56ST3FF (obsolete) has 871 pieces in stock. The SIR-563ST3FN (active) has 2852 pieces in stock, providing superior long-term availability for production and support applications.