SIR170DP-T1-RE3 Equivalent & Substitute Parts

Part Overview

The SIR170DP-T1-RE3 is an N-Channel 100V MOSFET manufactured by Vishay Siliconix, part of the TrenchFET® Gen IV series. This surface mount power transistor is rated for 23.2A continuous drain current at 25°C ambient temperature and 95A at case temperature, with a maximum drain-to-source voltage of 100V. The device is housed in a PowerPAK® SO-8 package and is designed for high-efficiency power switching applications requiring robust thermal performance and low on-resistance characteristics.

The SIR170DP-T1-RE3 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance specifications.

Substiute Parts

SIR170DP-T1-RE3

Vishay SiliconixIn Stock: 6242SIR170DP-T1-RE3 Datasheet

Current PartRFQ

RS1L145GNTB

Rohm SemiconductorIn Stock: 1899RS1L145GNTB Datasheet

MFR RecommendedRFQ

RS3L045GNGZETB

Rohm SemiconductorIn Stock: 2293RS3L045GNGZETB Datasheet

MFR RecommendedRFQ

RS6P100BHTB1

Rohm SemiconductorIn Stock: 3782RS6P100BHTB1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the SIR170DP-T1-RE3 are classified based on electrical parameter compatibility within the N-Channel MOSFET category. Substitution eligibility is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a drain-to-source voltage (Vdss) rating equal to or greater than 100V to ensure safe operation in circuits designed for the SIR170DP-T1-RE3.

Current Handling Capability: Substitute parts must support continuous drain current (Id) ratings at case temperature (Tc) that meet or exceed the 95A specification of the primary device.

On-Resistance Performance: The Rds On (Max) specification at rated gate voltage (10V) must be compatible with the application's power dissipation and thermal management requirements.

Gate Charge and Switching Characteristics: Gate charge (Qg) and input capacitance (Ciss) values influence switching speed and driver circuit requirements; substitutes are evaluated for compatibility with existing gate drive circuitry.

Thermal and Package Considerations: Operating temperature range, power dissipation capability, and surface mount package type must align with circuit board layout and thermal design constraints.

Compliance and Availability: All substitute parts maintain Active product status, RoHS3 compliance, and MSL 1 rating, ensuring regulatory and supply chain compatibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: RS6P100BHTB1

The RS6P100BHTB1 from Rohm Semiconductor is the closest functional equivalent to the SIR170DP-T1-RE3. Both devices share identical 100V drain-to-source voltage ratings and equivalent power dissipation capability at case temperature (104W). The RS6P100BHTB1 delivers 100A continuous drain current at case temperature, exceeding the SIR170DP-T1-RE3 specification of 95A. On-resistance performance is comparable at 5.9mOhm versus 4.8mOhm, representing a 23% increase in on-resistance. Gate charge is significantly lower at 45nC compared to 140nC, resulting in reduced switching losses and lower gate drive power requirements. Both devices maintain Active product status, RoHS3 compliance, MSL 1 rating, and operate across the -55°C to 150°C temperature range. Package transition from PowerPAK® SO-8 to 8-HSOP requires PCB layout verification for pin compatibility and thermal pad alignment.

Secondary Substitute: RS1L145GNTB

The RS1L145GNTB is suitable for applications where the 100V voltage rating is not required and current demands do not exceed 47A at case temperature. This device operates at 60V maximum drain-to-source voltage, limiting its use to lower-voltage circuit designs. Continuous drain current at case temperature is 47A, approximately 50% of the SIR170DP-T1-RE3 specification. On-resistance at 9.7mOhm is approximately double that of the primary device. Gate charge of 37nC provides improved switching characteristics compared to the SIR170DP-T1-RE3. This substitute is appropriate for cost-optimized designs with reduced current and voltage requirements. Packaging format transitions from Tape & Reel to Cut Tape & Digi-Reel®, affecting procurement and assembly processes.

Tertiary Substitute: RS3L045GNGZETB

The RS3L045GNGZETB is a low-current alternative rated for 4.5A continuous drain current at ambient temperature and 60V maximum drain-to-source voltage. This device is suitable only for applications with significantly reduced power handling requirements. On-resistance of 59mOhm is substantially higher than the primary device, resulting in increased power dissipation in switching applications. Gate charge of 5.6nC provides the lowest switching losses among all listed substitutes. This part is not recommended as a direct replacement for the SIR170DP-T1-RE3 in high-current applications but serves as an alternative for low-power circuit designs with different electrical specifications.

All substitute parts maintain compliance with RoHS3 regulations, REACH requirements, and unlimited moisture sensitivity ratings, ensuring regulatory compatibility with the original device.

Frequently Asked Questions (FAQ)

Q: Can the RS6P100BHTB1 directly replace the SIR170DP-T1-RE3 without circuit modifications?

A: The RS6P100BHTB1 shares the same 100V voltage rating and equivalent power dissipation capability, making it electrically compatible for most applications. However, package transition from PowerPAK® SO-8 to 8-HSOP requires verification of PCB footprint compatibility, thermal pad dimensions, and pin-to-pin spacing. Gate charge reduction from 140nC to 45nC may improve switching performance but requires confirmation that existing gate drive circuitry can accommodate the lower charge requirement without introducing instability.

Q: Why does the RS1L145GNTB have a lower voltage rating than the SIR170DP-T1-RE3?

A: The RS1L145GNTB is designed for 60V maximum drain-to-source voltage applications, which represents a different product category within the N-Channel MOSFET family. This lower voltage rating allows for optimized die design and reduced on-resistance at lower voltage levels. Substitution is only appropriate in circuit designs where the maximum operating voltage does not exceed 60V.

Q: What are the thermal implications of substituting the SIR170DP-T1-RE3 with the RS1L145GNTB?

A: The RS1L145GNTB has a maximum power dissipation rating of 3W at ambient temperature, compared to 6.25W for the SIR170DP-T1-RE3. This represents a 52% reduction in thermal capacity. Applications requiring sustained high-current operation may experience thermal stress with this substitute. Thermal management design must account for the reduced power dissipation capability and potentially require enhanced cooling solutions or reduced operating current.

Q: Are there package compatibility issues when substituting these parts?

A: Yes. The SIR170DP-T1-RE3 uses PowerPAK® SO-8 packaging, while RS6P100BHTB1 uses 8-HSOP, and RS1L145GNTB uses 8-HSOP. RS3L045GNGZETB uses 8-SOP. Each package variant has different pin configurations, thermal pad sizes, and PCB footprint requirements. PCB layout must be verified for each substitute to ensure proper electrical connections and thermal performance. Packaging format also differs: SIR170DP-T1-RE3 is supplied in Tape & Reel, while Rohm substitutes are available in Cut Tape & Digi-Reel® formats, affecting procurement and assembly processes.

Q: How does gate charge affect the choice of substitute parts?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The SIR170DP-T1-RE3 requires 140nC at 10V gate voltage. The RS6P100BHTB1 requires only 45nC, reducing gate drive power and potentially improving switching speed. Lower gate charge substitutes may reduce switching losses but require verification that gate drive circuitry has sufficient current capability to charge and discharge the gate at the intended switching frequency. Mismatched gate drive characteristics can result in reduced switching speed or increased electromagnetic interference.

Q: What compliance certifications are maintained across all substitute parts?

A: All listed substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL 1 (unlimited moisture sensitivity) rating, identical to the SIR170DP-T1-RE3. All devices are classified as Active products with no end-of-life notifications. Regulatory and supply chain compatibility is maintained across all substitutes.

Q: Is the RS3L045GNGZETB suitable as a general replacement for the SIR170DP-T1-RE3?

A: No. The RS3L045GNGZETB is rated for only 4.5A continuous drain current and 60V maximum voltage, representing approximately 5% of the current-handling capability of the SIR170DP-T1-RE3. This device is suitable only for low-power applications with fundamentally different electrical requirements. Substitution is not recommended for applications designed around the SIR170DP-T1-RE3 specifications.