SIL3439K-TP MOSFET N/P-Channel Equivalent & Substitute Parts

Part Overview

The SIL3439K-TP is a dual-channel MOSFET array manufactured by Micro Commercial Co, configured with both N-channel and P-channel devices in a compact SOT-23-6L surface mount package. This component integrates logic-level gate MOSFETs rated for 20V drain-to-source voltage with continuous drain currents of 1.3A (N-channel) and 1.1A (P-channel), delivering 1.25W maximum power dissipation across an operating temperature range of -55°C to 150°C.

The SIL3439K-TP is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and design continuity for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C - N-Channel	1.3	A
Continuous Drain Current (Id) @ 25°C - P-Channel	1.1	A
Maximum Power Dissipation	1.25	W
Gate Threshold Voltage (Vgs(th)) @ Id	1.1	V @ 250µA
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-23-6L	Surface Mount
Configuration	N and P-Channel	Dual Array
Technology	MOSFET (Metal Oxide)	Logic Level Gate

Substitute Part Grouping Explanation

Substitution eligibility for the SIL3439K-TP is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 20V
Package / Case: SOT-23-6L surface mount
Configuration: N and P-Channel dual array
Gate Threshold Voltage (Vgs(th)): 1.1V @ 250µA
Operating Temperature Range: -55°C to 150°C
Technology: MOSFET (Metal Oxide) with Logic Level Gate feature

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed the original specification (1.3A N-channel, 1.1A P-channel)
On-State Resistance (Rds On): Substitute values must not exceed original specifications
Input Capacitance (Ciss): Substitute values must not exceed original specifications
Power Dissipation: Substitute must support minimum 1.25W
Product Status: Active status preferred for long-term availability

The SIL3439KA-TP meets all mandatory matching criteria and qualifies as a direct substitute for the obsolete SIL3439K-TP.

Parameter Comparison

Parameter	SIL3439K-TP (Original)	SIL3439KA-TP (Substitute)	Unit
Manufacturer	Micro Commercial Co	Micro Commercial Co	—
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	—
Description	MOSFET N/P-CH 20V 1.3A SOT23-6L	MOSFET N/P-CH 20V 1.2A SOT23-6L	—
Configuration	N and P-Channel	N and P-Channel	—
Drain to Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) - N-Channel @ 25°C	1.3	1.2	A
Continuous Drain Current (Id) - P-Channel @ 25°C	1.1	1.0	A
Rds On (Max) - N-Channel @ 650mA, 4.5V	380	300	mOhm
Rds On (Max) - P-Channel @ 1A, 4.5V	520	850	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1.1 @ 250µA	1.1 @ 250µA	V
Input Capacitance (Ciss) - N-Channel @ 16V	60	33	pF
Input Capacitance (Ciss) - P-Channel @ 16V	175	40	pF
Power - Max	1.25	1.25	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package / Case	SOT-23-6	SOT-23-6	—
Supplier Device Package	SOT-23-6L	SOT-23-6L	—
Product Status	Obsolete	Active	—
Base Product Number	SIL3439	SIL3439	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—

Engineering Selection Recommendations

Primary Substitute: SIL3439KA-TP

The SIL3439KA-TP is the manufacturer-recommended substitute for the obsolete SIL3439K-TP. This part maintains identical electrical specifications across all critical parameters: 20V Vdss rating, matching gate threshold voltage, identical operating temperature range, and equivalent package configuration (SOT-23-6L).

The SIL3439KA-TP carries Active product status, ensuring long-term availability and continued manufacturing support. Both parts share the same base product number (SIL3439), identical ECCN classification (EAR99), and matching HTSUS code (8541.29.0095), confirming regulatory and compliance equivalence.

The substitute exhibits improved performance characteristics in specific parameters: N-channel on-state resistance is reduced from 380mOhm to 300mOhm, and input capacitance values are substantially lower across both channels (N-channel Ciss reduced from 60pF to 33pF; P-channel Ciss reduced from 175pF to 40pF). These improvements provide enhanced switching performance and reduced gate drive requirements.

The P-channel on-state resistance increases from 520mOhm to 850mOhm in the substitute. Applications requiring minimal P-channel resistance at 1A drain current must evaluate this parameter against specific circuit requirements.

Continuous drain current specifications are slightly reduced in the substitute (N-channel from 1.3A to 1.2A; P-channel from 1.1A to 1.0A). Circuit designs operating at or near the original current limits require verification that the substitute current ratings remain adequate for the intended application.

Frequently Asked Questions (FAQ)

Q: Can the SIL3439KA-TP directly replace the SIL3439K-TP in existing designs?

A: The SIL3439KA-TP is electrically and mechanically compatible with the SIL3439K-TP. Both components share identical package configuration (SOT-23-6L), voltage ratings (20V Vdss), gate threshold voltage (1.1V @ 250µA), and operating temperature range (-55°C to 150°C). Pin-for-pin compatibility is maintained. Designs operating within the substitute's current ratings (1.2A N-channel, 1.0A P-channel) require no circuit modifications.

Q: What are the key differences between these two parts?

A: The primary differences are product status and performance characteristics. The SIL3439K-TP is obsolete; the SIL3439KA-TP is active. The substitute offers improved N-channel on-state resistance (300mOhm versus 380mOhm) and significantly lower input capacitance values. The P-channel on-state resistance is higher in the substitute (850mOhm versus 520mOhm). Continuous drain currents are slightly reduced in the substitute.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both parts carry identical ECCN classification (EAR99) and HTSUS code (8541.29.0095). Regulatory compliance and export control status are equivalent.

Q: What should I verify before implementing the SIL3439KA-TP substitute?

A: Verify that your circuit design operates within the substitute's continuous drain current specifications (1.2A N-channel maximum, 1.0A P-channel maximum). If your design relies on the lower P-channel on-state resistance of the original part, evaluate whether the increased resistance (850mOhm) in the substitute affects circuit performance. The reduced input capacitance of the substitute may improve switching speed; confirm this does not introduce unintended effects in gate drive circuits.

Q: Is the SOT-23-6L package identical between both parts?

A: Yes. Both the SIL3439K-TP and SIL3439KA-TP use the SOT-23-6L surface mount package. PCB footprints, land patterns, and assembly processes are identical. No layout modifications are required.

Q: Why is the original part obsolete?

A: The SIL3439K-TP is classified as obsolete by the manufacturer. The SIL3439KA-TP represents the active continuation of this product line, incorporating performance improvements while maintaining backward compatibility.

Q: Can I use the SIL3439KA-TP in high-current applications near 1.3A?

A: The SIL3439KA-TP is rated for maximum continuous drain current of 1.2A (N-channel) and 1.0A (P-channel). Applications requiring sustained operation at 1.3A N-channel or 1.1A P-channel must not use the substitute. Verify that your actual operating current remains below the substitute's rated limits.

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