SIL2623-TP MOSFET Equivalent & Substitute Parts

Part Overview

The SIL2623-TP is a dual P-channel MOSFET array manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-23-6L package. This component integrates two P-channel MOSFETs with a maximum drain-source voltage rating of 30V and continuous drain current capability of 3A per channel.

The SIL2623-TP is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

SIL2623-TP
Micro Commercial CoIn Stock: 850SIL2623-TP Datasheet
SIL2623-TP
Current Part
SIL2623A-TP
Micro Commercial CoIn Stock: 9471SIL2623A-TP Datasheet
SIL2623A-TP
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 3 A
On-Resistance (Rds On) @ 3A, 10V 130 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 4.5V 4.5 nC
Input Capacitance (Ciss) @ 25V 240 pF
Maximum Power Dissipation 350 mW
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-6L Surface Mount
Configuration 2 P-Channel Dual

Substitute Part Grouping Explanation

Substitution of the SIL2623-TP is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current (Id): 3A minimum at 25°C
  • Configuration: Dual P-channel MOSFET array
  • Package: SOT-23-6L surface mount
  • Operating Temperature Range: -55°C to 150°C minimum

Allowable Parameter Variations: Substitute parts may exhibit improvements in the following parameters without affecting functional compatibility:

  • On-Resistance (Rds On): Lower values are acceptable
  • Gate Threshold Voltage (Vgs(th)): Lower values are acceptable
  • Gate Charge (Qg): Higher values are acceptable
  • Input Capacitance (Ciss): Higher values are acceptable
  • Maximum Power Dissipation: Higher values are acceptable

The SIL2623A-TP meets all mandatory equivalence criteria and demonstrates improved electrical characteristics in on-resistance and power dissipation ratings, making it a direct substitute for the obsolete SIL2623-TP.

Parameter Comparison

Parameter SIL2623-TP SIL2623A-TP Unit
Manufacturer Micro Commercial Co Micro Commercial Co
Configuration 2 P-Channel 2 P-Channel Dual
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 3 3 A
On-Resistance (Rds On) @ 3A, 10V 130 90 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 2.5 V
Gate Charge (Qg) 4.5 @ 4.5V 7.5 @ 15V nC
Input Capacitance (Ciss) 240 @ 25V 365 @ 10V pF
Maximum Power Dissipation 350 1.25 mW / W
Operating Temperature Range -55 to 150 -55 to 150 °C
Package / Case SOT-23-6 SOT-23-6
Supplier Device Package SOT-23-6L SOT-23-6L
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: SIL2623A-TP

The SIL2623A-TP is the direct substitute for the obsolete SIL2623-TP. Both components share identical voltage and current ratings, package configuration, and operating temperature specifications. The SIL2623A-TP maintains active product status with Micro Commercial Co, ensuring ongoing availability and supply chain support.

Compliance and Certification Alignment: Both the SIL2623-TP and SIL2623A-TP are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. Both components carry MSL Level 1 (Unlimited) moisture sensitivity classification, indicating equivalent handling and storage requirements.

Performance Characteristics: The SIL2623A-TP demonstrates superior electrical performance compared to the SIL2623-TP across multiple parameters. On-resistance is reduced from 130 mOhm to 90 mOhm at identical operating conditions (3A, 10V), resulting in lower power dissipation and improved thermal efficiency. Maximum power dissipation capability increases from 350 mW to 1.25 W, providing enhanced thermal headroom for demanding applications.

Gate threshold voltage is lower in the SIL2623A-TP (2.5V versus 3V), enabling faster switching response at lower gate drive voltages. These improvements are fully backward compatible with existing circuit designs utilizing the SIL2623-TP.

Supply Chain Considerations: The SIL2623A-TP is available in active production with significantly higher inventory levels (9364 pieces) compared to the obsolete SIL2623-TP (832 pieces). The SIL2623A-TP is supplied in Tape & Reel packaging, supporting automated assembly processes and high-volume production requirements.

Frequently Asked Questions (FAQ)

Q: Can the SIL2623A-TP be used as a direct replacement for the SIL2623-TP in existing designs?

A: Yes. The SIL2623A-TP is a direct substitute meeting all mandatory electrical and mechanical specifications. Both components feature identical voltage ratings (30V Vdss), current ratings (3A continuous drain current), package configuration (SOT-23-6L), and operating temperature range (-55°C to 150°C). The SIL2623A-TP exhibits improved on-resistance and power dissipation characteristics, making it functionally superior without requiring circuit modifications.

Q: What are the key differences between the SIL2623-TP and SIL2623A-TP?

A: The primary differences are product status and electrical performance. The SIL2623-TP is obsolete, while the SIL2623A-TP is active production. The SIL2623A-TP provides lower on-resistance (90 mOhm versus 130 mOhm), higher maximum power dissipation (1.25 W versus 350 mW), and lower gate threshold voltage (2.5V versus 3V). These improvements enhance switching efficiency and thermal performance.

Q: Are there any package or pinout differences between these components?

A: No. Both the SIL2623-TP and SIL2623A-TP use identical SOT-23-6L surface mount packaging with the same pinout configuration. No PCB layout modifications are required for substitution.

Q: What is the significance of the lower on-resistance in the SIL2623A-TP?

A: Lower on-resistance (Rds On) reduces power dissipation during conduction. At 3A drain current and 10V gate-source voltage, the SIL2623A-TP dissipates approximately 30% less power than the SIL2623-TP (0.27 W versus 0.39 W), resulting in lower junction temperatures and improved reliability in thermally constrained applications.

Q: Are both components RoHS and REACH compliant?

A: Yes. Both the SIL2623-TP and SIL2623A-TP are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What is the moisture sensitivity level for these components?

A: Both components carry MSL Level 1 (Unlimited) classification, indicating no moisture sensitivity restrictions. Standard handling and storage procedures are sufficient without requiring dry-pack or desiccant storage.

Q: Why is the SIL2623-TP listed as obsolete?

A: The SIL2623-TP has been superseded by the SIL2623A-TP in the manufacturer's product portfolio. The SIL2623A-TP offers improved electrical performance and is maintained in active production status. Existing inventory of the SIL2623-TP is limited, making the SIL2623A-TP the recommended choice for new designs and ongoing production support.

Q: Can the SIL2623A-TP handle higher power dissipation than the SIL2623-TP?

A: Yes. The SIL2623A-TP is rated for maximum power dissipation of 1.25 W compared to 350 mW for the SIL2623-TP. This 3.6x increase in power rating provides greater thermal margin and supports applications with higher current or switching frequency requirements.

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