Equivalent & Substitute Parts Reference: SIL04P06-TP

Part Overview

SIL04P06-TP is a P-Channel MOSFET rated at 60 V and 3.5A, provided in a SOT-23-6L surface-mount package. The product status is Obsolete. Alternate models must be identified to ensure continued production, servicing, or design-in compatibility due to the unavailability of the main part.

Key Parameters

Parameter	SIL04P06-TP
Category	Transistors, FETs, MOSFETs
FET Type	P-Channel
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3.5A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 15 V
Power Dissipation (Max)	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6

Substitute Part Grouping Explanation

Substitute parts for SIL04P06-TP are determined strictly by matching critical parameters. These include:

FET Type (P-Channel)
Drain to Source Voltage (Vdss)
Maximum Continuous Drain Current (Id) at 25°C
Drive Voltage levels for Rds On
Rds On (on-resistance) at specified test conditions
Gate Threshold Voltage (Vgs(th)) at specified test current
Maximum Gate Voltage (Vgs)
Maximum Power Dissipation
Operating Temperature Range
Input Capacitance (Ciss) (if provided)
Mounting Type and Package/Case (SOT-23-6 or SOT-23-6L)

Substitute parts must have identical or permitted variance in these parameters for functional equivalency within the same product category and mechanical envelope.

Parameter Comparison

Parameter	SIL04P06-TP	SIL04P06Y-TP
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	3.5A	3.5A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3.1A, 10V	85mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V	4.27 nC @ 4.5 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 15 V	505 pF @ 15 V
Power Dissipation (Max)	2W	1.56W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	SOT-23-6	SOT-23-6

Engineering Selection Recommendations

SIL04P06-TP is Obsolete. SIL04P06Y-TP is listed as Active and provides the same package type, pinout, and principal electrical characteristics required for substitution. Both products share the base product family, ensuring engineering continuity of supply and compliance with standard SOT-23-6 surface mount applications. REACH, ECCN, and HTSUS identifiers are compatible.

Frequently Asked Questions (FAQ)

Q: What are the most critical parameters when substituting a P-Channel MOSFET like SIL04P06-TP?
A: Key parameters are FET type, maximum drain-to-source voltage (Vdss), maximum continuous drain current (Id), Rds On at similar test conditions, gate threshold voltage (Vgs(th)), maximum gate voltage (Vgs), maximum power dissipation, operating temperature, input capacitance if provided, and the correct package/case.

Q: Is the package of SIL04P06Y-TP identical to SIL04P06-TP?
A: Yes, both use the SOT-23-6 (SOT-23-6L) surface-mount package, enabling direct mechanical interchangeability.

Q: Are there differences in electrical performance between SIL04P06-TP and SIL04P06Y-TP?
A: The primary differences are Rds On (80mOhm vs 85mOhm), gate charge, input capacitance, and power dissipation. Current rating, voltage rating, operating temperature, and mounting type are matched.

Q: Is SIL04P06Y-TP compliant with current environmental standards?
A: SIL04P06Y-TP is listed as REACH Unaffected.

Q: Can SIL04P06Y-TP be used without modifying the PCB or assembly process?
A: Both parts share the same mechanical package, so no changes to PCB footprint or assembly are required based on the provided parameters.

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