SIHFS11N50A-GE3 Equivalent & Substitute Parts Reference

Part Overview

The SIHFS11N50A-GE3 is an N-Channel MOSFET in the Transistors, FETs, MOSFETs category, offered by Vishay Siliconix. It is designed for high voltage (500 V) and high current (11A) switching applications and is supplied in a surface mount TO-263 (D2PAK) package. The part is currently active and suitable for designs requiring its specified parameters. Identifying alternative models is essential for ensuring supply continuity, managing compliance requirements, and maintaining compatibility in manufacturing when the preferred part is unavailable or when different attributes such as RoHS status are required.

Key Parameters

Manufacturer Part Number	Manufacturer	Category	Packaging	Description	Detailed Description	Inventory	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	Moisture Sensitivity Level (MSL)	ECCN	HTSUS
SIHFS11N50A-GE3	Vishay Siliconix	Transistors, FETs, MOSFETs	Tape & Reel (TR)	MOSFET N-CH 500V 11A TO263	N-Channel 500 V 11A (Tc) 170W (Tc) Surface Mount TO-263 (D2PAK)	1012 Pcs New Original In Stock	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	170W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	1 (Unlimited)	EAR99	8541.29.0095

Substitute Part Grouping Explanation

The substitute parts for SIHFS11N50A-GE3 are selected strictly based on parametric equivalence across the following key parameters: FET type (N-Channel), technology (MOSFET), drain to source voltage (Vdss), current—continuous drain (Id) at 25°C, drive voltage, maximum Rds On at specified Id and Vgs, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, operating temperature range, mounting type, supplier device package, package/case type, moisture sensitivity level, and compliance codes. Substitute parts must match or exceed these specifications; all values used for comparison are directly specified in the input.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Category	Packaging	Description	Detailed Description	Inventory	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	Moisture Sensitivity Level (MSL)	ECCN	HTSUS	RoHS Status
SIHFS11N50A-GE3	Vishay Siliconix	Transistors, FETs, MOSFETs	Tape & Reel (TR)	MOSFET N-CH 500V 11A TO263	N-Channel 500 V 11A (Tc) 170W (Tc) Surface Mount TO-263 (D2PAK)	1012 Pcs	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	170W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	1 (Unlimited)	EAR99	8541.29.0095
IRFS11N50ATRLP	Vishay Siliconix	Transistors, FETs, MOSFETs	Tape & Reel (TR)	MOSFET N-CH 500V 11A TO263AB	N-Channel 500 V 11A (Tc) 170W (Tc) Surface Mount TO-263AB	1670 Pcs	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	520mOhm @ 6.6A, 10V	4V @ 250µA	52 nC @ 10 V	±30V	1423 pF @ 25 V	170W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	1 (Unlimited)	EAR99	8541.29.0095	RoHS non-compliant

Engineering Selection Recommendations

Both SIHFS11N50A-GE3 and IRFS11N50ATRLP are active products with matching electrical and mechanical parameters, suitable for direct substitution in designs requiring N-Channel MOSFETs with 500 V drain to source voltage and 11A continuous drain current. Consideration should be given to RoHS status if applications mandate compliance; SIHFS11N50A-GE3 does not specify RoHS status, while IRFS11N50ATRLP is RoHS non-compliant. Both devices feature the same moisture sensitivity level (MSL 1), inventory status, and identical package types per the input.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for substituting SIHFS11N50A-GE3?
A1: Substitution is based on equivalence across electrical parameters (Vdss, Id, Rds On, drive voltage, Vgs(th), Qg, etc.) and mechanical package type (TO-263), as well as matching operating temperature range, power dissipation, mounting type, and compliance codes.

Q2: Is there any difference in mounting or package between SIHFS11N50A-GE3 and IRFS11N50ATRLP?
A2: Both parts are supplied in surface mount TO-263 (D2PAK/AB) packages and are compatible regarding mounting and footprint based on input specifications.

Q3: How does RoHS status impact substitute selection?
A3: If compliance with RoHS is necessary for regulatory or customer requirements, IRFS11N50ATRLP is identified as RoHS non-compliant, and this should be considered during part selection.

Q4: Are there differences in electrical performance between SIHFS11N50A-GE3 and IRFS11N50ATRLP?
A4: All specified key electrical parameters (including Vdss, Id, Rds On, Vgs(th), Qg, and Ciss) are identical between these two parts per the provided data.

Q5: What is the relevance of moisture sensitivity level (MSL) in substitution decisions?
A5: Both parts have an MSL of 1 (unlimited), meaning they are suitable for typical reflow soldering processes and storage conditions, with no special handling required.

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