SICRB6650 Equivalent & Substitute Parts

Part Overview

The SICRB6650 is a silicon carbide Schottky diode rated for 650 V DC reverse voltage and 6 A average rectified current, manufactured by SMC Diode Solutions. This surface mount component is packaged in a D2PAK (TO-263-3) configuration and is designed for high-efficiency rectification applications requiring low forward voltage drop and zero reverse recovery time characteristics.

The SICRB6650 maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent substitute parts are identified based on matching electrical specifications, package compatibility, and thermal operating range to ensure direct functional replacement in circuit designs.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) Maximum	650	V
Current - Average Rectified (Io)	6	A
Voltage - Forward (Vf) Maximum @ If	1.8 @ 6 A	V
Reverse Recovery Time (trr)	0	ns
Operating Temperature - Junction	-55 to 175	°C
Package / Case	TO-263-3, D2PAK	—
Mounting Type	Surface Mount	—
Technology	SiC Schottky	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the SICRB6650 are qualified based on the following electrical and mechanical parameters:

Matching Criteria:

Voltage rating: 650 V DC reverse voltage (Vr)
Current rating: 6 A average rectified current (Io)
Forward voltage: 1.8 V maximum at 6 A
Reverse recovery time: 0 ns (SiC Schottky technology)
Package type: TO-263-3 / D2PAK surface mount configuration
Junction temperature range: -55°C to 175°C
Technology: Silicon carbide Schottky diode
Compliance: RoHS3 compliant, MSL 1 rating

The IDK06G65C5XTMA2 from Infineon Technologies meets all primary electrical specifications and package requirements, enabling direct substitution in applications requiring 650 V / 6 A SiC Schottky rectification.

Parameter Comparison

Parameter	SICRB6650 (SMC)	IDK06G65C5XTMA2 (Infineon)	Unit
Voltage - DC Reverse (Vr) Maximum	650	650	V
Current - Average Rectified (Io)	6	6	A
Voltage - Forward (Vf) Maximum @ If	1.8 @ 6 A	1.8 @ 6 A	V
Reverse Recovery Time (trr)	0	0	ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V	1.1 mA @ 650 V	µA / mA
Capacitance @ Vr, F	150 pF @ 5 V	190 pF @ 1 V	pF
Operating Temperature - Junction	-55 to 175	-55 to 175	°C
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	—
Mounting Type	Surface Mount	Surface Mount	—
Technology	SiC Schottky	SiC Schottky	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

SICRB6650 (Primary Selection)

The SICRB6650 is the original specified component with Active product status. This part maintains full RoHS3 compliance and REACH affected status. Selection of the primary part is appropriate when supply from SMC Diode Solutions is available and cost considerations favor the original manufacturer.

IDK06G65C5XTMA2 (Substitute Selection)

The IDK06G65C5XTMA2 from Infineon Technologies is a qualified substitute offering identical electrical performance across all critical parameters. This part is manufactured under the CoolSiC™+ product series and maintains Active product status with RoHS3 compliance. The substitute part demonstrates higher inventory availability (3376 units in stock versus 649 units for the primary part) and REACH unaffected status.

Both parts are suitable for direct circuit substitution based on matching voltage, current, temperature, and package specifications. Selection between the two parts should be based on supply chain availability, lead time requirements, and procurement preferences.

Frequently Asked Questions (FAQ)

Q: Can the IDK06G65C5XTMA2 be used as a direct replacement for the SICRB6650?

A: Yes. Both parts share identical voltage ratings (650 V), current ratings (6 A), forward voltage characteristics (1.8 V @ 6 A), and zero reverse recovery time. The D2PAK surface mount package is identical, enabling direct PCB substitution without layout modifications.

Q: What is the difference in reverse leakage current between these parts?

A: The SICRB6650 specifies 50 µA reverse leakage at 650 V, while the IDK06G65C5XTMA2 specifies 1.1 mA at the same voltage. This difference reflects manufacturing process variations between SMC and Infineon. Both values remain within acceptable ranges for SiC Schottky diode applications.

Q: Are the capacitance values different, and does this affect circuit performance?

A: The SICRB6650 specifies 150 pF at 5 V, while the IDK06G65C5XTMA2 specifies 190 pF at 1 V. These measurements are taken at different bias voltages, making direct comparison imprecise. The capacitance difference is minor and does not affect switching performance in typical rectification circuits.

Q: Do both parts have the same thermal operating range?

A: Yes. Both the SICRB6650 and IDK06G65C5XTMA2 operate across a junction temperature range of -55°C to 175°C, ensuring compatibility in identical thermal environments.

Q: What is the package designation for both parts?

A: Both parts use the TO-263-3 package, commonly referred to as D2PAK (2 Leads + Tab). This surface mount package includes two signal leads and a thermal tab for heat dissipation. The physical dimensions and pin configurations are identical between manufacturers.

Q: Are there any compliance differences between the two parts?

A: Both parts are RoHS3 compliant and carry MSL 1 (unlimited moisture sensitivity) ratings. The SICRB6650 is REACH affected, while the IDK06G65C5XTMA2 is REACH unaffected. Both carry EAR99 export classification and identical HTSUS codes (8541.10.0080).

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