SI7682DP-T1-GE3 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The SI7682DP-T1-GE3 is an N-Channel 30V 20A MOSFET manufactured by Vishay Siliconix in the TrenchFET® series. This device is packaged in PowerPAK® SO-8 surface mount configuration and is rated for continuous drain current of 20A at 25°C with maximum power dissipation of 5W (Ta) and 27.5W (Tc). The part is currently obsolete, making equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	20	A (Tc)
Rds On (Max) @ Id, Vgs	9	mOhm @ 20A, 10V
Gate Threshold Voltage Vgs(th) (Max)	2.5	V @ 250µA
Gate Charge (Qg) (Max)	38	nC @ 10V
Input Capacitance (Ciss) (Max)	1595	pF @ 15V
Power Dissipation (Max)	5 (Ta), 27.5 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount
Package	PowerPAK® SO-8
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the SI7682DP-T1-GE3 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 20A at 25°C
Rds On (Max): Must not exceed 9mOhm at specified gate voltage
Gate Threshold Voltage: Must be compatible with 2.5V maximum specification
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Surface Mount required
RoHS Compliance: ROHS3 Compliant required

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation capability: Determines thermal performance

Substitute parts are grouped into two categories: direct package equivalents (PowerPAK® SO-8 and similar form factors) and functional equivalents with alternative packages (8-VSONP, 8-HSOP, PowerFlat™) that maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Ciss Max (pF)	Package	Status
SI7682DP-T1-GE3	Vishay Siliconix	30	20 (Tc)	9 @ 20A, 10V	2.5 @ 250µA	38 @ 10V	1595 @ 15V	PowerPAK® SO-8	Obsolete
SIR172ADP-T1-GE3	Vishay Siliconix	30	24 (Tc)	8.5 @ 10A, 10V	2.4 @ 250µA	44 @ 10V	1515 @ 15V	PowerPAK® SO-8	Active
CSD17302Q5A	Texas Instruments	30	16 (Ta), 87 (Tc)	7.9 @ 14A, 8V	1.7 @ 250µA	7 @ 4.5V	950 @ 15V	8-VSONP (5x6)	Active
CSD17307Q5A	Texas Instruments	30	14 (Ta), 73 (Tc)	10.5 @ 11A, 8V	1.8 @ 250µA	5.2 @ 4.5V	700 @ 15V	8-VSONP (5x6)	Active
CSD17322Q5A	Texas Instruments	30	87 (Tc)	8.8 @ 14A, 8V	2 @ 250µA	4.3 @ 4.5V	695 @ 15V	8-VSONP (5x6)	Active
CSD17507Q5A	Texas Instruments	30	13 (Ta), 65 (Tc)	10.8 @ 11A, 10V	2.1 @ 250µA	3.6 @ 4.5V	530 @ 15V	8-VSONP (5x6)	Active
CSD17522Q5A	Texas Instruments	30	87 (Tc)	8.1 @ 14A, 10V	2 @ 250µA	4.3 @ 4.5V	695 @ 15V	8-VSONP (5x6)	Active
CSD17527Q5A	Texas Instruments	30	65 (Tc)	10.8 @ 11A, 10V	2 @ 250µA	3.4 @ 4.5V	506 @ 15V	8-VSONP (5x6)	Active
RS1E150GNTB	Rohm Semiconductor	30	15 (Ta), 40 (Tc)	8.8 @ 15A, 10V	2.5 @ 1mA	10 @ 10V	590 @ 15V	8-HSOP	Active
STL56N3LLH5	STMicroelectronics	30	56 (Tc)	9 @ 7.5A, 10V	1 @ 250µA	6.5 @ 4.5V	950 @ 25V	PowerFlat™ (5x6)	Active

Engineering Selection Recommendations

Primary Recommendation: SIR172ADP-T1-GE3

The SIR172ADP-T1-GE3 is the preferred direct substitute. It maintains the same PowerPAK® SO-8 package as the SI7682DP-T1-GE3, ensuring mechanical and thermal compatibility without PCB redesign. The part is currently in active production status with high inventory availability (47,300 units). Electrical parameters are superior: 24A continuous drain current exceeds the 20A requirement, Rds On of 8.5mOhm is lower than the 9mOhm specification, and gate threshold voltage of 2.4V is within acceptable tolerance. Both parts are ROHS3 compliant with identical operating temperature ranges (-55°C to 150°C). This substitute requires no circuit modifications.

Secondary Recommendations: Texas Instruments NexFET™ Series

The CSD17302Q5A, CSD17322Q5A, CSD17522Q5A, and CSD17527Q5A from Texas Instruments are functionally equivalent but use the 8-VSONP (5x6) package instead of PowerPAK® SO-8. These parts require PCB layout modifications. All are in active production with strong inventory levels. The CSD17322Q5A and CSD17522Q5A offer the highest current ratings (87A Tc) with Rds On values of 8.8mOhm and 8.1mOhm respectively, both meeting the 9mOhm specification. Gate charge values are significantly lower (3.4 to 7 nC), indicating faster switching characteristics. All NexFET™ parts are ROHS3 compliant.

Alternative Recommendation: STL56N3LLH5

The STL56N3LLH5 from STMicroelectronics (STripFET™ V series) provides the highest current capacity (56A Tc) with 9mOhm Rds On matching the original specification exactly. The PowerFlat™ (5x6) package is mechanically similar to PowerPAK® SO-8 but requires verification of PCB footprint compatibility. This part is in active production with lower inventory (1,320 units). Gate charge of 6.5nC is moderate, and power dissipation capability is superior at 62.5W (Tc).

Compatibility Consideration: RS1E150GNTB

The RS1E150GNTB from Rohm Semiconductor meets all electrical requirements with 15A continuous drain current and 8.8mOhm Rds On. The 8-HSOP package differs from the original and requires PCB redesign. Inventory is limited (1,800 units). This part is suitable only when package change is acceptable.

All recommended substitutes maintain the required 30V Vdss rating, support the full -55°C to 150°C operating temperature range, and are ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q1: Can I use CSD17302Q5A as a direct replacement for SI7682DP-T1-GE3 without PCB modifications?

No. The CSD17302Q5A uses an 8-VSONP (5x6) package, while the SI7682DP-T1-GE3 uses PowerPAK® SO-8. Although both are surface mount packages with similar dimensions, the pinout and footprint differ. PCB layout changes are required. The SIR172ADP-T1-GE3 is the only substitute that maintains the identical PowerPAK® SO-8 package.

Q2: What is the key difference between the Vishay SIR172ADP-T1-GE3 and the Texas Instruments CSD17322Q5A?

The SIR172ADP-T1-GE3 maintains the original PowerPAK® SO-8 package and is rated for 24A continuous drain current. The CSD17322Q5A uses an 8-VSONP package and is rated for 87A continuous drain current at Tc. The CSD17322Q5A has significantly lower gate charge (4.3nC vs. 44nC), enabling faster switching. Package compatibility is the primary consideration for selection.

Q3: Why do some substitutes show different Rds On values at different gate voltages?

Rds On (on-state drain-source resistance) is gate voltage dependent. The SI7682DP-T1-GE3 specifies 9mOhm at 20A with 10V gate drive. Different substitutes may specify Rds On at different gate voltages (8V or 4.5V) or different drain currents. When comparing substitutes, verify that the specified Rds On condition matches your circuit's gate drive voltage and operating current to ensure thermal performance compatibility.

Q4: Is the STL56N3LLH5 suitable for my application if I can modify the PCB?

The STL56N3LLH5 is electrically suitable if your application can accommodate the PowerFlat™ (5x6) package footprint. The part exceeds all electrical requirements: 56A continuous drain current, 9mOhm Rds On (matching the original exactly), and superior power dissipation at 62.5W (Tc). Verify that the PowerFlat™ package pinout and thermal pad dimensions are compatible with your PCB design before committing to this substitute.

Q5: What does "Tc" and "Ta" mean in the current ratings?

Tc indicates continuous drain current rating at the case temperature (typically 25°C for the device case). Ta indicates continuous drain current rating at ambient temperature (typically 25°C ambient air). Tc ratings are generally higher because the case temperature is controlled by the PCB thermal design. For design purposes, use the Tc rating if your thermal management is adequate, or the Ta rating for conservative design margins.

Q6: Can I use a substitute with lower gate charge if my gate driver has limited current capability?

Yes. Lower gate charge (Qg) values indicate faster charging and discharging of the gate capacitance, which reduces gate driver stress. Substitutes like CSD17527Q5A (3.4nC) and CSD17322Q5A (4.3nC) have significantly lower gate charge than the original SI7682DP-T1-GE3 (38nC). This is advantageous for gate drivers with limited current output. Verify that your gate driver voltage levels are compatible with the substitute's Vgs(th) and maximum Vgs ratings.

Q7: Are all recommended substitutes RoHS3 compliant?

Yes. All substitute parts listed are ROHS3 compliant, matching the compliance status of the original SI7682DP-T1-GE3. This ensures compatibility with environmental regulations and procurement requirements.

Q8: Which substitute offers the best thermal performance?

The STL56N3LLH5 offers the highest power dissipation capability at 62.5W (Tc), followed by the SIR172ADP-T1-GE3 at 29.8W (Tc). The Texas Instruments NexFET™ parts are rated at 3W (Ta). If thermal performance is critical, the STL56N3LLH5 is the optimal choice, provided the PowerFlat™ package is compatible with your PCB design.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message