Equivalent & Substitute Parts Reference: SI5933CDC-T1-E3

Part Overview

The SI5933CDC-T1-E3, manufactured by Vishay Siliconix, is a dual P-Channel MOSFET array in the 1206-8 ChipFET™ surface mount package, suitable for power management applications requiring compact design and efficient switching. As this part has an "Obsolete" status, it is necessary to identify alternate models with compatible electrical and mechanical parameters to ensure ongoing design support and production continuity.

Substiute Parts

SI5933CDC-T1-E3

Vishay SiliconixIn Stock: 6496SI5933CDC-T1-E3 Datasheet

Current PartRFQ

SI5935CDC-T1-GE3

Vishay SiliconixIn Stock: 23310SI5935CDC-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution for SI5933CDC-T1-E3 is based strictly on matching critical electrical and mechanical parameters: MOSFET technology, configuration (2 P-Channel dual array), drain to source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, and package equivalence (1206-8 ChipFET™). Substitute parts are grouped if they meet these defined criteria according to provided manufacturer specifications.

Parameter Comparison

Engineering Selection Recommendations

Selection is based on product status and regulatory compliance. The SI5933CDC-T1-E3 is obsolete. SI5935CDC-T1-GE3 maintains ROHS3 compliance, REACH unaffected, EAR99 ECCN, and identical moisture sensitivity level and package form factor, supporting direct compatibility within the defined electrical and mechanical specifications for the MOSFETs category.

Frequently Asked Questions (FAQ)

Q1: What are the essential criteria for substituting SI5933CDC-T1-E3 in my design?
A1: Substitute selection is determined by matching MOSFET array configuration, voltage and current handling, Rds(on), gate threshold voltage, package type, operating temperature range, and regulatory certifications.

Q2: Is SI5935CDC-T1-GE3 mechanically compatible with SI5933CDC-T1-E3?
A2: Both parts use the 1206-8 ChipFET™ surface mount package, ensuring mechanical compatibility for device footprint and solderability.

Q3: Are there differences in regulatory compliance or moisture sensitivity between SI5933CDC-T1-E3 and SI5935CDC-T1-GE3?
A3: Both are ROHS3 compliant, REACH unaffected, and have MSL 1 (Unlimited), meeting industry safety and handling standards.

Q4: Can I use SI5935CDC-T1-GE3 in applications requiring the same operating temperature range as SI5933CDC-T1-E3?
A4: Both devices are rated for -55°C to 150°C (TJ), supporting identical environmental specifications.

Q5: Which electrical parameters are critical for direct substitution in the MOSFETs category?
A5: Key electrical parameters include drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg), and input capacitance (Ciss), in addition to package compatibility.

Q6: Does substitute availability impact selection for ongoing production?
A6: SI5935CDC-T1-GE3 is listed as "Active" and available in standard packaging formats, enabling continued sourcing within the MOSFETs category.