SI4420DY N-Channel 30V 12.5A MOSFET Equivalent & Substitute Parts

Part Overview

The SI4420DY is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 12.5A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and features the PowerTrench® technology series. The SI4420DY is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting modern compliance standards.

Substiute Parts

SI4420DY
onsemiIn Stock: 1518SI4420DY Datasheet
SI4420DY
Current Part
FDS6680A
onsemiIn Stock: 50440FDS6680A Datasheet
FDS6680A
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AO4492
Alpha & Omega Semiconductor Inc.In Stock: 5264AO4492 Datasheet
AO4492
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BSO110N03MSGXUMA1
Infineon TechnologiesIn Stock: 8464BSO110N03MSGXUMA1 Datasheet
BSO110N03MSGXUMA1
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IRF7821TRPBF
Infineon TechnologiesIn Stock: 31373IRF7821TRPBF Datasheet
IRF7821TRPBF
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Key Parameters

Parameter SI4420DY Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 12.5 A
On-Resistance (Rds On) @ 12.5A, 10V 9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 V
Gate Charge (Qg) @ 5V 53 nC
Input Capacitance (Ciss) @ 15V 2180 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOIC
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the SI4420DY is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current (Id): 12.5A or greater at 25°C
  • Gate-to-Source Voltage (Vgs): ±20V maximum rating
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Surface Mount
  • Package Footprint: 8-SOIC or compatible 8-pin surface mount package

Acceptable Variation Parameters:

  • On-Resistance (Rds On): Within ±10% of 9 mOhm or lower
  • Gate Charge (Qg): Lower values acceptable for improved switching performance
  • Input Capacitance (Ciss): Lower values acceptable for reduced switching losses
  • Power Dissipation: Equal to or greater than 2.5W

All substitute parts listed maintain the 30V voltage rating and support minimum 12.5A continuous drain current. Substitute parts may exceed the original specifications in current handling and power dissipation, provided they remain compatible with the same package footprint and thermal operating range.

Parameter Comparison

Parameter SI4420DY FDS6680A AO4492 BSO110N03MSGXUMA1 IRF7821TRPBF Unit
Drain-to-Source Voltage (Vdss) 30 30 30 30 30 V
Continuous Drain Current (Id) @ 25°C 12.5 12.5 14 10 13.6 A
On-Resistance (Rds On) @ Vgs 10V 9 9.5 9.5 11 9.1 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 3 2.2 2 1 V
Gate Charge (Qg) 53 23 18 20 14 nC
Input Capacitance (Ciss) @ 15V 2180 1620 770 1500 1010 pF
Power Dissipation (Max) 2.5 2.5 3.1 1.56 2.5 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 155 °C
Package Type 8-SOIC 8-SOIC 8-SOIC 8-DSO 8-SO
Product Status Obsolete Active Obsolete Active Active

Engineering Selection Recommendations

FDS6680A (onsemi) FDS6680A is an active product from onsemi, the original manufacturer of the SI4420DY. It maintains identical voltage and current ratings (30V, 12.5A) with equivalent on-resistance (9.5 mOhm). The device features reduced gate charge (23 nC) and input capacitance (1620 pF) compared to the original part, resulting in improved switching efficiency. FDS6680A is ROHS3 compliant and carries REACH Unaffected status. This part is the primary recommended substitute for direct replacement in new designs.

IRF7821TRPBF (Infineon Technologies) IRF7821TRPBF is an active HEXFET® series device rated for 30V and 13.6A continuous drain current, exceeding the SI4420DY specifications. The device demonstrates superior on-resistance (9.1 mOhm) and significantly lower gate charge (14 nC) and input capacitance (1010 pF). Operating temperature extends to 155°C. IRF7821TRPBF is ROHS3 compliant and suitable for applications requiring enhanced switching performance and thermal margin.

AO4492 (Alpha & Omega Semiconductor Inc.) AO4492 is an obsolete product rated for 30V and 14A continuous drain current. While it exceeds the original current specification, its obsolete status limits suitability for new production. The device offers lower gate charge (18 nC) and minimal input capacitance (770 pF). AO4492 is ROHS3 compliant but should be considered only for legacy system maintenance where existing inventory exists.

BSO110N03MSGXUMA1 (Infineon Technologies) BSO110N03MSGXUMA1 is an active OptiMOS™ series device rated for 30V and 10A continuous drain current. This part falls below the minimum 12.5A requirement of the SI4420DY and is suitable only for applications with reduced current demands. The device features higher on-resistance (11 mOhm) and lower power dissipation (1.56W). Moisture sensitivity level is 3 (168 hours), requiring controlled storage conditions. This part is not recommended as a direct substitute for the SI4420DY.

Frequently Asked Questions (FAQ)

Q: Can FDS6680A directly replace SI4420DY in existing designs? A: Yes. FDS6680A maintains identical 30V voltage rating and 12.5A current specification with equivalent on-resistance. The 8-SOIC package footprint is identical. FDS6680A is an active product from the original manufacturer, making it the primary substitute for new production and redesigns.

Q: What is the key difference between IRF7821TRPBF and SI4420DY? A: IRF7821TRPBF exceeds SI4420DY specifications with 13.6A continuous drain current versus 12.5A, and demonstrates superior switching characteristics through lower gate charge (14 nC versus 53 nC) and reduced input capacitance (1010 pF versus 2180 pF). Both devices maintain 30V voltage rating and -55°C to 150°C operating range. IRF7821TRPBF is suitable for applications requiring enhanced performance margins.

Q: Why is BSO110N03MSGXUMA1 listed if it has only 10A rating? A: BSO110N03MSGXUMA1 is included for reference in applications where current requirements are lower than the original 12.5A specification. The device maintains 30V voltage compatibility and 8-pin surface mount package compatibility. However, it does not meet the minimum 12.5A continuous drain current requirement and is not recommended as a direct substitute for SI4420DY.

Q: Are all substitute parts ROHS3 compliant? A: FDS6680A, AO4492, BSO110N03MSGXUMA1, and IRF7821TRPBF are all ROHS3 compliant. All listed substitutes carry REACH Unaffected status. The original SI4420DY does not specify RoHS status due to its obsolete classification.

Q: What is the moisture sensitivity level requirement for these parts? A: FDS6680A, AO4492, and IRF7821TRPBF carry MSL 1 (Unlimited), requiring no special moisture control during storage and handling. BSO110N03MSGXUMA1 carries MSL 3 (168 hours), requiring controlled storage conditions and baking procedures before reflow soldering if moisture exposure exceeds specified limits.

Q: Can I use AO4492 for new production designs? A: AO4492 is classified as obsolete and carries no guarantee of future availability. While it exceeds SI4420DY current specifications (14A versus 12.5A), its obsolete status makes it unsuitable for new production. FDS6680A or IRF7821TRPBF are recommended for new designs requiring active product support and supply continuity.

Q: What is the operating temperature difference between SI4420DY and IRF7821TRPBF? A: SI4420DY operates from -55°C to 150°C (TJ). IRF7821TRPBF extends the upper limit to 155°C (TJ), providing an additional 5°C thermal margin. Both devices maintain identical lower temperature limit of -55°C.

Q: How do gate charge specifications affect circuit performance? A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. SI4420DY requires 53 nC at 5V, while FDS6680A requires 23 nC, IRF7821TRPBF requires 14 nC, and AO4492 requires 18 nC. Lower gate charge values improve efficiency in high-frequency switching applications.

Q: Are the package dimensions identical across all substitute parts? A: FDS6680A, AO4492, and IRF7821TRPBF all use 8-SOIC (0.154", 3.90mm width) packages with identical footprints to SI4420DY. BSO110N03MSGXUMA1 uses PG-DSO-8 package designation but maintains 8-SOIC (0.154", 3.90mm width) physical dimensions, ensuring PCB compatibility.

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