SI3447CDV-T1-E3 Equivalent & Substitute Parts

Part Overview

The SI3447CDV-T1-E3 is a P-Channel MOSFET manufactured by Vishay Siliconix, rated for 12V drain-to-source voltage with 7.8A continuous drain current. This device is packaged in a 6-TSOP (SOT-23-6 Thin) surface mount configuration and is part of the TrenchFET® series. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Substiute Parts

SI3447CDV-T1-E3
Vishay SiliconixIn Stock: 1415SI3447CDV-T1-E3 Datasheet
SI3447CDV-T1-E3
Current Part
SI3493DDV-T1-GE3
Vishay SiliconixIn Stock: 55159SI3493DDV-T1-GE3 Datasheet
SI3493DDV-T1-GE3
MFR Recommended
RAF040P01TCL
Rohm SemiconductorIn Stock: 17423RAF040P01TCL Datasheet
RAF040P01TCL
MFR Recommended
RAL025P01TCR
Rohm SemiconductorIn Stock: 1400RAL025P01TCR Datasheet
RAL025P01TCR
MFR Recommended
RQ5P010SNTL
Rohm SemiconductorIn Stock: 13837RQ5P010SNTL Datasheet
RQ5P010SNTL
MFR Recommended
RQ6A045APTCR
Rohm SemiconductorIn Stock: 3675RQ6A045APTCR Datasheet
RQ6A045APTCR
MFR Recommended
RQ6A045ZPTR
Rohm SemiconductorIn Stock: 998RQ6A045ZPTR Datasheet
RQ6A045ZPTR
MFR Recommended

Key Parameters

Parameter SI3447CDV-T1-E3 Unit
FET Type P-Channel
Drain-to-Source Voltage (Vdss) 12 V
Continuous Drain Current (Id) @ 25°C 7.8 A (Tc)
On-Resistance (Rds On) @ Id, Vgs 36 mOhm @ 6.3A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id 1 V @ 250µA
Gate Charge (Qg) @ Vgs 30 nC @ 8V
Maximum Gate Voltage (Vgs) ±8 V
Input Capacitance (Ciss) @ Vds 910 pF @ 6V
Power Dissipation (Max) 2 (Ta), 3 (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package 6-TSOP (SOT-23-6 Thin)
Product Status Obsolete
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the SI3447CDV-T1-E3 is determined by the following critical parameters:

Channel Type: P-Channel operation is mandatory for direct functional replacement.

Voltage Rating (Vdss): The 12V rating establishes the maximum drain-to-source voltage the device can withstand. Substitutes with equal or higher voltage ratings are acceptable.

Continuous Drain Current (Id): The 7.8A rating at 25°C defines the current-handling capability. Substitutes must meet or exceed this specification to maintain circuit performance.

On-Resistance (Rds On): The 36 mOhm specification at 4.5V gate drive determines switching losses and thermal performance. Lower on-resistance values improve efficiency.

Gate Voltage Compatibility (Vgs): The ±8V maximum gate voltage specification must be matched or exceeded in substitutes to ensure safe gate drive operation.

Package Compatibility: The 6-TSOP surface mount package is the physical constraint. Substitutes in equivalent or compatible packages are acceptable.

Thermal and Compliance Requirements: Operating temperature range (-55°C to 150°C), RoHS3 compliance, and MSL rating (1 - Unlimited) establish environmental and regulatory constraints.

Substitutes are grouped into two categories:

Direct Equivalents (Same Vdss, Enhanced Performance): Parts with 12V Vdss rating and equal or superior current and on-resistance specifications.

Functional Alternatives (Higher Vdss, Backward Compatible): Parts with higher voltage ratings that operate safely in 12V circuits while providing enhanced reliability margins.

Parameter Comparison

Parameter SI3447CDV-T1-E3 SI3493DDV-T1-GE3 RAF040P01TCL RAL025P01TCR RQ6A045APTCR RQ6A045ZPTR Unit
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss 12 20 12 12 12 12 V
Id @ 25°C 7.8 (Tc) 8 (Tc) 4 (Ta) 2.5 (Ta) 4.5 (Ta) 4.5 (Ta) A
Rds On @ Vgs 4.5V 36 @ 6.3A 24 @ 7.5A 30 @ 4A 62 @ 2.5A 30 @ 4.5A 35 @ 4.5A mOhm
Vgs(th) @ Id 1 @ 250µA 1 @ 250µA 1 @ 1mA 1 @ 1mA 1 @ 1mA 1 @ 1mA V
Qg @ Vgs 30 @ 8V 30 @ 4.5V 37 @ 4.5V 16 @ 4.5V 40 @ 4.5V 31 @ 4.5V nC
Vgs (Max) ±8 ±8 -8 -8 ±8 ±10 V
Ciss @ Vds 910 @ 6V 1825 @ 10V 4000 @ 6V 2000 @ 6V 4200 @ 6V 2450 @ 6V pF
Power Dissipation (Max) 2 (Ta), 3 (Tc) 3.6 (Tc) 0.8 (Ta) 0.32 (Ta) 0.95 (Ta) 0.95 (Ta) W
Operating Temperature -55 to 150 -55 to 150 150 150 150 150 °C (TJ)
Package 6-TSOP 6-TSOP TUMT3 TUMT6 TSMT6 TSMT6
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

Primary Substitute: SI3493DDV-T1-GE3

The SI3493DDV-T1-GE3 is the manufacturer-recommended substitute from Vishay Siliconix. This part maintains P-Channel topology and 6-TSOP packaging identical to the SI3447CDV-T1-E3. The SI3493DDV-T1-GE3 provides enhanced specifications with 20V Vdss rating (backward compatible with 12V circuits), 8A continuous drain current, and superior on-resistance of 24 mOhm at 4.5V gate drive. The device is classified as Active product status with ROHS3 compliance and unlimited moisture sensitivity level. Inventory availability is substantial at 55,100 pieces.

Secondary Substitutes: RQ6A045APTCR and RQ6A045ZPTR

Both Rohm Semiconductor parts (RQ6A045APTCR and RQ6A045ZPTR) are P-Channel MOSFETs rated for 12V Vdss with 4.5A continuous drain current. These devices are packaged in TSMT6 (SC-95) surface mount configuration, which differs from the original 6-TSOP package but maintains functional compatibility in 6-pin surface mount applications. Both parts are Active status with ROHS3 compliance. The RQ6A045APTCR offers 30 mOhm on-resistance with 3,628 pieces in inventory. The RQ6A045ZPTR provides 35 mOhm on-resistance with 950 pieces available.

Alternative Substitutes: RAF040P01TCL and RAL025P01TCR

The RAF040P01TCL (Rohm Semiconductor) is a 12V, 4A P-Channel MOSFET in TUMT3 package with 30 mOhm on-resistance. The RAL025P01TCR is a 12V, 2.5A P-Channel MOSFET in TUMT6 package with 62 mOhm on-resistance. Both parts are Active status with ROHS3 compliance. These alternatives are suitable for applications where current requirements are lower than the original specification.

Non-Recommended: RQ5P010SNTL

The RQ5P010SNTL is an N-Channel MOSFET and is not functionally equivalent to the P-Channel SI3447CDV-T1-E3. This part is excluded from substitution consideration.

Frequently Asked Questions (FAQ)

Q: Can the SI3493DDV-T1-GE3 directly replace the SI3447CDV-T1-E3 in existing designs?

A: Yes. The SI3493DDV-T1-GE3 maintains identical P-Channel topology, 6-TSOP packaging, and gate voltage specifications (±8V). The higher 20V Vdss rating provides enhanced voltage margin while remaining backward compatible with 12V circuit operation. On-resistance is superior at 24 mOhm versus 36 mOhm, reducing switching losses.

Q: What is the impact of package differences between 6-TSOP and TSMT6?

A: Both packages are 6-pin surface mount configurations with identical pin counts and compatible footprints for most applications. The TSMT6 (SC-95) package used by Rohm parts is mechanically and electrically compatible with 6-TSOP layouts. PCB layout verification is required to confirm footprint compatibility in specific designs.

Q: Are the Rohm Semiconductor substitutes (RQ6A045APTCR and RQ6A045ZPTR) functionally equivalent?

A: Both Rohm parts are P-Channel MOSFETs with 12V Vdss and 4.5A continuous drain current, matching the primary current requirement of the SI3447CDV-T1-E3. On-resistance specifications (30 mOhm and 35 mOhm respectively) are comparable to the original 36 mOhm specification. Gate voltage ratings (±8V and ±10V) accommodate standard gate drive circuits.

Q: Why is the RQ5P010SNTL listed in the original substitute list but not recommended?

A: The RQ5P010SNTL is an N-Channel MOSFET, fundamentally different from the P-Channel SI3447CDV-T1-E3. Channel type determines circuit topology and cannot be substituted without complete redesign. This part is excluded from equivalent substitution.

Q: What are the current limitations of the RAF040P01TCL and RAL025P01TCR alternatives?

A: The RAF040P01TCL is rated for 4A continuous drain current, approximately 51% of the original 7.8A specification. The RAL025P01TCR is rated for 2.5A, approximately 32% of the original specification. These parts are suitable only for applications with reduced current requirements and are not direct replacements for full-current designs.

Q: How does the higher Vdss rating of the SI3493DDV-T1-GE3 affect circuit operation?

A: The 20V Vdss rating of the SI3493DDV-T1-GE3 provides additional voltage margin above the 12V circuit operating point. This higher rating does not degrade performance in 12V applications and improves reliability by reducing stress on the device during transient voltage events. All other electrical characteristics remain compatible with the original design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts (SI3493DDV-T1-GE3, RAF040P01TCL, RAL025P01TCR, RQ6A045APTCR, and RQ6A045ZPTR) are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1), matching the environmental and regulatory requirements of the original SI3447CDV-T1-E3.

Q: What is the significance of the Active product status for substitute parts?

A: Active product status indicates ongoing manufacturing and long-term availability. All recommended substitutes are classified as Active, ensuring continued procurement support and supply chain stability. The original SI3447CDV-T1-E3 is classified as Obsolete, making substitution necessary for new designs and ongoing production.

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