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SI3415B-TP P-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The SI3415B-TP is a P-Channel MOSFET manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-23 package. This device features a 20 V drain-to-source voltage rating with 5.6 A continuous drain current capability and 1.3 W maximum power dissipation. The SI3415B-TP is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing in applications where this device was previously specified.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 5.6 | A |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.6 A, 4.5 V | — |
| Power Dissipation (Max) | 1.3 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the SI3415B-TP is determined by strict equivalence across the following critical parameters:
Channel Type & Technology: Both the main part and substitute must be P-Channel MOSFETs to maintain circuit polarity and gate drive compatibility.
Voltage Rating (Vdss): The substitute must meet or exceed the 20 V drain-to-source voltage specification to ensure safe operation under maximum applied voltage conditions.
Current Capability (Id): The substitute must support the required continuous drain current. The SI3415B-TP specifies 5.6 A; substitutes with equal or greater current ratings are acceptable.
On-Resistance (Rds On): The substitute's on-resistance must not exceed the original specification to maintain thermal performance and power dissipation characteristics within design margins.
Power Dissipation: The substitute must support the 1.3 W maximum power dissipation requirement to prevent thermal runaway in the application.
Package Compatibility: Both parts must use the SOT-23 surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.
Operating Temperature Range: The substitute must support the full -55°C to 150°C operating temperature range.
Compliance & Status: The substitute must maintain RoHS3 compliance and REACH unaffected status for regulatory continuity.
Parameter Comparison
| Parameter | SI3415B-TP (Main Part) | SI3415C-TP (Substitute) | Compatibility |
|---|---|---|---|
| FET Type | P-Channel | P-Channel | Equivalent |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent |
| Drain to Source Voltage (Vdss) | 20 V | 20 V | Equivalent |
| Current - Continuous Drain (Id) @ 25°C | 5.6 A | 5 A (Ta) | Substitute rated lower; verify application margin |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.6 A, 4.5 V | 40 mOhm @ 5 A, 4.5 V | Substitute has lower on-resistance |
| Power Dissipation (Max) | 1.3 W | 1 W | Substitute rated lower; verify thermal margin |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Equivalent |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | Equivalent |
| Vgs (Max) | ±12 V | ±10 V | Substitute has lower gate voltage rating |
| Product Status | Obsolete | Active | Substitute is actively manufactured |
| RoHS Status | ROHS3 Compliant | Not specified in data | Verify compliance for new designs |
Engineering Selection Recommendations
SI3415C-TP as Primary Substitute:
The SI3415C-TP is the manufacturer-recommended substitute for the obsolete SI3415B-TP. Both devices share the same base product number (SI3415) and are manufactured by Micro Commercial Co. The SI3415C-TP is currently in active production status, ensuring long-term availability and supply chain continuity.
Electrical Compatibility:
The SI3415C-TP maintains identical voltage ratings (20 V Vdss) and operating temperature range (-55°C to 150°C). The substitute features improved on-resistance (40 mOhm versus 42 mOhm), which reduces power dissipation and thermal stress in the application.
Current Rating Consideration:
The SI3415C-TP is rated for 5 A continuous drain current, compared to the SI3415B-TP's 5.6 A rating. Applications operating at or near the 5.6 A specification must confirm that the 5 A rating of the substitute provides adequate margin for the intended duty cycle and thermal environment.
Power Dissipation Consideration:
The SI3415C-TP has a maximum power dissipation rating of 1 W, compared to the SI3415B-TP's 1.3 W. Designs operating near the 1.3 W limit must verify that the substitute's 1 W rating remains within acceptable thermal margins under worst-case operating conditions.
Gate Voltage Rating:
The SI3415C-TP has a maximum gate voltage rating of ±10 V, compared to the SI3415B-TP's ±12 V. Gate drive circuits must be confirmed to operate within the ±10 V specification.
Regulatory Compliance:
The SI3415C-TP maintains REACH unaffected status and EAR99 export classification, consistent with the original part. RoHS3 compliance status for the substitute should be confirmed with the manufacturer for new design certifications.
Package Compatibility:
Both parts use identical SOT-23 surface mount packaging, ensuring direct PCB layout compatibility without redesign.
Frequently Asked Questions (FAQ)
Q: Can the SI3415C-TP be used as a direct replacement for the SI3415B-TP in existing designs?
A: The SI3415C-TP is electrically and mechanically compatible with the SI3415B-TP for most applications. However, designs operating at continuous drain currents above 5 A or power dissipation above 1 W must verify that the substitute's lower ratings provide adequate operating margin. Gate drive circuits must also confirm operation within the ±10 V maximum gate voltage specification of the substitute.
Q: What is the primary reason for substituting the SI3415B-TP?
A: The SI3415B-TP is classified as obsolete. The SI3415C-TP is the active production equivalent, ensuring continued component availability, supply chain reliability, and manufacturer support for new and ongoing production.
Q: Are there any package differences between the SI3415B-TP and SI3415C-TP?
A: No. Both devices use the SOT-23 surface mount package (TO-236-3, SC-59, SOT-23-3). No PCB layout modifications are required for substitution.
Q: How do the on-resistance specifications compare?
A: The SI3415C-TP has a lower on-resistance (40 mOhm at 5 A, 4.5 V) compared to the SI3415B-TP (42 mOhm at 5.6 A, 4.5 V). Lower on-resistance reduces power dissipation and improves thermal performance in the application.
Q: What is the significance of the current rating difference (5.6 A versus 5 A)?
A: The SI3415B-TP is rated for 5.6 A continuous drain current, while the SI3415C-TP is rated for 5 A. Applications requiring continuous currents between 5 A and 5.6 A must evaluate whether the substitute's 5 A rating provides sufficient margin for the intended duty cycle, ambient temperature, and thermal management strategy.
Q: Are there compliance differences between the two parts?
A: Both parts maintain REACH unaffected status and EAR99 export classification. The SI3415B-TP is confirmed ROHS3 compliant. RoHS3 compliance status for the SI3415C-TP should be verified with the manufacturer for new design certifications.
Q: What is the gate voltage rating difference?
A: The SI3415B-TP has a maximum gate voltage rating of ±12 V, while the SI3415C-TP is rated for ±10 V. Gate drive circuits must be confirmed to operate within the ±10 V specification of the substitute to prevent gate oxide stress.
Q: Is the SI3415C-TP the only available substitute?
A: Based on the provided data, the SI3415C-TP is the manufacturer-recommended substitute. Both parts share the same base product number (SI3415) and are from the same manufacturer, indicating direct product line succession.
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