SI2306-TP N-Channel 30V 3.16A MOSFET Equivalent & Substitute Parts

Part Overview

The SI2306-TP is an N-Channel MOSFET manufactured by Micro Commercial Co, rated for 30V drain-to-source voltage with a continuous drain current of 3.16A at 25°C. This device is housed in a SOT-23 surface mount package and is designed for general-purpose switching applications requiring moderate current handling in compact form factors. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package footprint and environmental compliance standards.

Substiute Parts

SI2306-TP
Micro Commercial CoIn Stock: 8236SI2306-TP Datasheet
SI2306-TP
Current Part
FDN359BN
onsemiIn Stock: 125235FDN359BN Datasheet
FDN359BN
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NDS355AN
onsemiIn Stock: 90204NDS355AN Datasheet
NDS355AN
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NTR4503NT1G
onsemiIn Stock: 155321NTR4503NT1G Datasheet
NTR4503NT1G
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PJA3406_R1_00001
Panjit International Inc.In Stock: 7411PJA3406_R1_00001 Datasheet
PJA3406_R1_00001
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Key Parameters

Parameter SI2306-TP Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 3.16 A
RDS(on) Max @ 2.5A, 4.5V 65 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Power Dissipation (Max) 750 mW
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for N-Channel MOSFETs in the SOT-23 package is determined by the following criteria:

Mandatory Matching Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Package Type: SOT-23-3 (TO-236-3, SC-59)
  • Mounting Type: Surface Mount
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: Must encompass -55°C to 150°C
  • RoHS3 Compliance: Required
  • MSL Rating: 1 (Unlimited)

Performance Consideration Parameters:

  • Continuous Drain Current (Id): Determines current-handling capability
  • RDS(on): Affects on-state voltage drop and thermal performance
  • Gate Threshold Voltage (Vgs(th)): Influences gate drive requirements
  • Power Dissipation: Indicates thermal management capability
  • Gate Charge (Qg): Affects switching speed and drive circuit design

The SI2306-TP establishes a baseline with 3.16A continuous drain current and 750mW power dissipation. Substitute parts are grouped based on whether they meet, exceed, or fall below these performance metrics while maintaining full electrical and mechanical compatibility.

Parameter Comparison

Parameter SI2306-TP FDN359BN NDS355AN NTR4503NT1G PJA3406_R1_00001 Unit
Manufacturer Micro Commercial Co onsemi onsemi onsemi Panjit International Inc.
Drain-to-Source Voltage (Vdss) 30 30 30 30 30 V
Continuous Drain Current (Id) @ 25°C 3.16 2.7 1.7 1.5 4.4 A
RDS(on) Max @ Rated Conditions 65 @ 2.5A, 4.5V 46 @ 2.7A, 10V 85 @ 1.9A, 10V 110 @ 2.5A, 10V 48 @ 4.4A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 3 2 3 2.1 V
Gate Charge (Qg) @ 5V or 10V 4.5 @ 5V 7 @ 5V 5 @ 5V 7 @ 10V 5.8 @ 10V nC
Input Capacitance (Ciss) @ 15V or 24V 305 @ 15V 650 @ 15V 195 @ 15V 250 @ 24V 235 @ 15V pF
Power Dissipation (Max) 750 500 500 420 1250 mW
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Package Type SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Packaging Format Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) & Digi-Reel® Cut Tape (CT) & Digi-Reel® Cut Tape (CT) & Digi-Reel®
RoHS3 Compliance Yes Yes Yes Yes Yes
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Active Active

Engineering Selection Recommendations

Direct Substitutes (Equivalent or Superior Performance):

PJA3406_R1_00001 (Panjit International Inc.) is the primary substitute when higher current capacity is required. This device delivers 4.4A continuous drain current with superior power dissipation capability (1.25W), representing a performance upgrade over the SI2306-TP. The lower RDS(on) of 48mOhm at rated conditions provides reduced on-state losses. All electrical and mechanical parameters remain compatible with the original specification. This part is suitable for applications requiring increased current headroom or thermal margin.

FDN359BN (onsemi PowerTrench® series) provides near-equivalent performance with 2.7A continuous drain current and 46mOhm RDS(on). Power dissipation is reduced to 500mW, making this suitable for applications with lower thermal budgets. The part maintains full compatibility with the SOT-23-3 package and all compliance requirements.

Reduced-Performance Substitutes (Lower Current Rating):

NDS355AN (onsemi) and NTR4503NT1G (onsemi) are suitable only for applications where the required drain current does not exceed 1.7A and 1.5A respectively. These parts feature reduced power dissipation (500mW and 420mW) and are appropriate for lower-power switching circuits. Selection of these parts requires verification that circuit current demands remain within their rated specifications.

Compliance and Availability:

All substitute parts maintain Active product status, full RoHS3 compliance, and unlimited moisture sensitivity rating (MSL 1). Inventory availability varies: PJA3406_R1_00001 (7,380 pcs), FDN359BN (125,200 pcs), NDS355AN (90,100 pcs), and NTR4503NT1G (155,300 pcs) are all available in production quantities.

Frequently Asked Questions (FAQ)

Q: Can FDN359BN replace SI2306-TP in all applications?

A: FDN359BN is electrically and mechanically compatible with SI2306-TP. However, the reduced continuous drain current rating (2.7A versus 3.16A) and lower power dissipation (500mW versus 750mW) require verification that circuit operating conditions remain within FDN359BN specifications. If the application requires sustained currents above 2.7A or generates thermal loads exceeding 500mW, FDN359BN is not suitable.

Q: What is the advantage of PJA3406_R1_00001 over SI2306-TP?

A: PJA3406_R1_00001 offers higher continuous drain current (4.4A versus 3.16A) and greater power dissipation capability (1.25W versus 750mW). The lower RDS(on) (48mOhm versus 65mOhm) reduces on-state voltage drop and associated losses. These characteristics make PJA3406_R1_00001 suitable for applications requiring higher current capacity or improved thermal performance. All other electrical and mechanical parameters remain compatible.

Q: Are NDS355AN and NTR4503NT1G suitable for high-current applications?

A: No. NDS355AN is rated for 1.7A continuous drain current and NTR4503NT1G for 1.5A. These parts are designed for low-to-moderate current switching applications. Applications requiring the SI2306-TP's 3.16A rating must use either the original part, PJA3406_R1_00001 (4.4A), or FDN359BN (2.7A).

Q: Do all substitute parts use the same SOT-23-3 package?

A: Yes. All substitute parts use the SOT-23-3 package (also designated TO-236-3 or SC-59). Physical footprint and pin configuration are identical, enabling direct board-level substitution without layout modifications.

Q: What is the difference between Tape & Reel and Cut Tape packaging?

A: Tape & Reel (TR) packaging is supplied on continuous carrier tape suitable for automated pick-and-place equipment in high-volume production. Cut Tape (CT) and Digi-Reel® packaging provides smaller quantities on cut tape segments, suitable for lower-volume assembly or prototyping. Electrical and mechanical specifications are identical; packaging format selection depends on production volume and assembly equipment compatibility.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. SI2306-TP and all listed substitute parts (FDN359BN, NDS355AN, NTR4503NT1G, PJA3406_R1_00001) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. All parts are suitable for applications requiring environmental compliance certification.

Q: How do gate threshold voltage differences affect circuit design?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-to-source voltage required to initiate conduction. SI2306-TP specifies 3V at 250µA. Substitute parts range from 2V (NDS355AN) to 3V (SI2306-TP, FDN359BN, NTR4503NT1G). Lower threshold voltages enable operation with reduced gate drive voltage. Gate drive circuits must supply sufficient voltage to exceed the selected part's threshold specification for reliable switching.

Q: What does RDS(on) represent and why does it vary between parts?

A: RDS(on) is the on-state drain-to-source resistance when the MOSFET is fully conducting. Lower RDS(on) values reduce conduction losses and heat generation. SI2306-TP specifies 65mOhm at 2.5A and 4.5V. Substitute parts show variation: PJA3406_R1_00001 (48mOhm), FDN359BN (46mOhm), NDS355AN (85mOhm), and NTR4503NT1G (110mOhm). Selection depends on acceptable voltage drop and thermal dissipation requirements.

Q: Can substitute parts be mixed in the same circuit board design?

A: Mixing substitute parts on the same board is not recommended. Differences in RDS(on), gate charge, and input capacitance affect switching characteristics and thermal performance. Consistent part selection ensures uniform circuit behavior and thermal distribution. If design flexibility is required, all parts must be qualified and tested together under actual operating conditions.

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