SI2304-TP N-Channel MOSFET 30V 2.5A SOT-23 Equivalent & Substitute Parts

Part Overview

The SI2304-TP is an N-Channel MOSFET manufactured by Micro Commercial Co, rated for 30V drain-to-source voltage with 2.5A continuous drain current at 25°C. This device is housed in a SOT-23 surface mount package and is designed for general-purpose switching applications requiring compact form factors. The part is Active in product status and RoHS3 compliant.

Substitute parts are necessary when the primary part is unavailable, when alternative packaging formats are required, or when design specifications allow for components with different electrical characteristics within acceptable operating parameters. The substitute parts listed maintain compatibility through matching package types, mounting methods, and core electrical specifications while offering variations in power dissipation, gate charge, and current ratings.

Substiute Parts

SI2304-TP

Micro Commercial CoIn Stock: 4560SI2304-TP Datasheet

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DMN3110S-7

Diodes IncorporatedIn Stock: 17680DMN3110S-7 Datasheet

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DMN3150L-7

Diodes IncorporatedIn Stock: 170579DMN3150L-7 Datasheet

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FDN357N

onsemiIn Stock: 125429FDN357N Datasheet

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MGSF1N02LT1G

onsemiIn Stock: 23202MGSF1N02LT1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the SI2304-TP is determined by the following criteria:

Primary Compatibility Requirements:

• FET Type: N-Channel (all substitutes must be N-Channel)
• Package Type: SOT-23-3 / TO-236-3 / SC-59 (surface mount, same footprint)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ) minimum
• RoHS3 Compliance and MSL Level 1 (Unlimited)

Electrical Parameter Flexibility:

• Drain-to-Source Voltage (Vdss): Substitute must be ≥30V
• Continuous Drain Current (Id): Substitute may be ≥2.5A or lower depending on application headroom
• Power Dissipation: Substitute may exceed 250mW; lower values require thermal verification
• Rds On: Lower values are preferred for efficiency; higher values acceptable if thermal limits are maintained
• Gate Charge (Qg): Lower values reduce drive circuit stress; higher values acceptable with adequate gate drive
• Vgs (Max): Substitute must be ±20V or greater

Packaging Format Flexibility:

• Tape & Reel (TR) and Cut Tape (CT) with Digi-Reel® are functionally equivalent for component selection

Parameter Comparison

Engineering Selection Recommendations

DMN3110S-7 (Diodes Incorporated)

The DMN3110S-7 is a direct electrical equivalent to the SI2304-TP. Both devices share identical Vdss (30V) and Id (2.5A) ratings. The DMN3110S-7 offers improved power dissipation capability (740mW vs. 250mW) and lower gate charge (8.6nC vs. 10nC), making it suitable for applications where thermal headroom or faster switching is beneficial. This part is Active in product status, RoHS3 compliant, and available in Tape & Reel packaging. Selection of this substitute is appropriate when the primary part is unavailable and thermal or switching performance improvements are acceptable.

DMN3150L-7 (Diodes Incorporated)

The DMN3150L-7 offers higher current capability (3.8A vs. 2.5A) and significantly higher power dissipation (1.4W vs. 250mW). The Vdss rating is 28V, which is below the SI2304-TP specification of 30V. This part is suitable only for applications where the actual operating voltage does not exceed 28V and where the increased current and thermal capacity provide design margin. The lower gate threshold voltage (1.4V vs. 3V) may require gate drive circuit adjustment. This part is Active in product status and RoHS3 compliant. Substitution requires confirmation that the 28V Vdss rating is acceptable for the target application.

FDN357N (onsemi)

The FDN357N maintains the 30V Vdss rating and is compatible with the SI2304-TP gate voltage specification (±20V). However, the continuous drain current is rated at 1.9A, which is lower than the SI2304-TP (2.5A). The FDN357N offers lower on-state resistance (60mOhm vs. 90mOhm) and lower gate charge (5.9nC vs. 10nC), providing improved switching efficiency. Power dissipation is 500mW, double that of the SI2304-TP. This part is Active in product status and RoHS3 compliant. Selection is appropriate for applications where current requirements do not exceed 1.9A and where improved switching performance is desired.

MGSF1N02LT1G (onsemi)

The MGSF1N02LT1G has a reduced Vdss rating of 20V and a continuous drain current of 750mA, both significantly lower than the SI2304-TP. This part is suitable only for low-voltage, low-current applications and is not recommended as a general substitute for the SI2304-TP. The on-state resistance matches the SI2304-TP (90mOhm), and the input capacitance is lower (125pF vs. 240pF). This part is Active in product status and RoHS3 compliant. Substitution requires confirmation that both the 20V voltage rating and 750mA current rating are compatible with the application.

General Selection Criteria:

All substitute parts are Active in product status, RoHS3 compliant, and rated for the same operating temperature range (-55°C to 150°C). All are housed in SOT-23-3 packages with MSL Level 1 (Unlimited) moisture sensitivity. Selection should prioritize parts that maintain or exceed the SI2304-TP electrical specifications unless application constraints permit reduced ratings. Thermal design and gate drive circuit compatibility must be verified for each substitute selection.

Frequently Asked Questions (FAQ)

Q: Can the DMN3110S-7 be used as a direct replacement for the SI2304-TP?

A: Yes. The DMN3110S-7 shares identical Vdss (30V) and Id (2.5A) ratings with the SI2304-TP. Both are N-Channel MOSFETs in SOT-23-3 packages with compatible gate voltage specifications (±20V). The DMN3110S-7 offers higher power dissipation capability (740mW vs. 250mW) and lower gate charge, making it functionally compatible for direct substitution in most applications.

Q: Why is the DMN3150L-7 listed as a substitute if its Vdss is only 28V?

A: The DMN3150L-7 is listed as a substitute for applications where the actual operating voltage does not exceed 28V. While the SI2304-TP is rated for 30V, many applications operate at lower voltages (such as 24V or 12V systems). The DMN3150L-7 provides higher current capability (3.8A) and significantly higher power dissipation (1.4W), offering design margin in these lower-voltage applications. Substitution requires verification that the 28V rating is acceptable for the specific circuit.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as FDN357N at 5.9nC) reduces switching losses and allows faster switching speeds with lower gate drive current requirements. Higher gate charge (such as SI2304-TP at 10nC) requires more gate drive energy but is not problematic if the gate drive circuit is designed accordingly. Selection depends on switching frequency and gate drive circuit capabilities.

Q: Are all substitute parts available in the same packaging formats as the SI2304-TP?

A: All substitute parts are available in SOT-23-3 surface mount packages, which are physically and electrically compatible with the SI2304-TP. However, packaging formats differ: the SI2304-TP is available in Tape & Reel (TR), while DMN3150L-7 and FDN357N are available in Cut Tape (CT) with Digi-Reel®, and DMN3110S-7 is available in Tape & Reel (TR). These format differences do not affect component functionality but may impact procurement and handling procedures.

Q: Can the MGSF1N02LT1G be used in place of the SI2304-TP?

A: The MGSF1N02LT1G is not recommended as a general substitute for the SI2304-TP. The MGSF1N02LT1G has a Vdss rating of only 20V (compared to 30V) and a continuous drain current of 750mA (compared to 2.5A). Substitution is only appropriate for applications specifically designed for 20V operation with current requirements not exceeding 750mA. Using this part in a circuit designed for the SI2304-TP would result in voltage and current rating violations.

Q: What compliance certifications should I verify when selecting a substitute?

A: All listed substitute parts are RoHS3 compliant and have MSL Level 1 (Unlimited) moisture sensitivity ratings, matching the SI2304-TP. All parts are rated for the same operating temperature range (-55°C to 150°C). REACH status is "REACH Unaffected" for all parts, and ECCN classification is EAR99 for all parts. These certifications ensure regulatory and environmental compliance across all substitute options.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three factors: (1) voltage requirements—ensure Vdss rating meets or exceeds your circuit voltage; (2) current requirements—ensure Id rating meets or exceeds your maximum continuous drain current; (3) thermal requirements—ensure power dissipation rating provides adequate margin for your operating conditions. If your application requires 30V and 2.5A, the DMN3110S-7 is the most direct substitute. If your application operates at lower voltages or currents, other substitutes may offer performance advantages.

Q: What is the difference between Rds On specifications at different test conditions?

A: Rds On (on-state resistance) varies with gate voltage (Vgs) and drain current (Id). The SI2304-TP specifies 90mOhm at 2.2A and 4.5V gate voltage. Different substitutes may specify Rds On at different test conditions (for example, DMN3110S-7 at 3.1mA and 10V). Lower Rds On values reduce power dissipation and heat generation. When comparing substitutes, verify that test conditions are similar or that the substitute's Rds On is acceptable for your application's actual operating point.