SI2101-TP P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The SI2101-TP is a P-Channel MOSFET manufactured by Micro Commercial Co, rated for 20V drain-to-source voltage and 1.4A continuous drain current in a surface mount SOT-323 package. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. The part operates across an industrial temperature range of -55°C to 150°C and dissipates a maximum of 290mW, suitable for low-power switching and control applications.

Key Parameters

Parameter	SI2101-TP Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	1.4	A
Rds On (Max) @ 1A, 4.5V	100	mOhm
Vgs(th) (Max) @ 250µA	1.2	V
Vgs (Max)	±8	V
Input Capacitance (Ciss) @ 8V	640	pF
Power Dissipation (Max)	290	mW
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-323 (SC-70)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the SI2101-TP is determined by the following critical parameters: P-Channel FET type, surface mount SOT-323 package compatibility, operating temperature range (-55°C to 150°C), and RoHS3 compliance. The drain-to-source voltage rating (Vdss), continuous drain current (Id), on-resistance (Rds On), and gate threshold voltage (Vgs(th)) establish functional equivalence boundaries.

Three substitute parts are identified based on these criteria:

SI2101A-TP (Micro Commercial Co): Shares identical Vdss (20V), package (SOT-323), temperature range, and RoHS3 compliance. Offers higher continuous drain current (2A vs. 1.4A) and increased power dissipation (450mW vs. 290mW), with lower gate threshold voltage (1V vs. 1.2V). Rds On specification differs (130mOhm @ 1.5A, 4.5V vs. 100mOhm @ 1A, 4.5V). Product status is active.

NTS2101PT1G (onsemi): Shares identical continuous drain current (1.4A), Rds On (100mOhm @ 1A, 4.5V), power dissipation (290mW), input capacitance (640pF), and package (SC-70-3/SOT-323). Vdss is reduced to 8V. Gate threshold voltage is 1V. Product status is active.

NTS4101PT1G (onsemi): Shares identical Vdss (20V), package (SC-70-3/SOT-323), and temperature range. Continuous drain current is 1.37A (equivalent to 1.4A specification). Rds On is 120mOhm @ 1A, 4.5V. Gate threshold voltage is 1.5V. Power dissipation is 329mW. Product status is active.

Parameter Comparison

Parameter	SI2101-TP	SI2101A-TP	NTS2101PT1G	NTS4101PT1G	Unit
Manufacturer	Micro Commercial Co	Micro Commercial Co	onsemi	onsemi	—
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	—
Vdss	20	20	8	20	V
Id @ 25°C	1.4	2	1.4	1.37	A
Rds On (Max) @ 4.5V	100 @ 1A	130 @ 1.5A	100 @ 1A	120 @ 1A	mOhm
Vgs(th) (Max) @ 250µA	1.2	1	1	1.5	V
Vgs (Max)	±8	±10	±8	±8	V
Ciss @ Vds	640 @ 8V	290 @ 10V	640 @ 8V	840 @ 20V	pF
Power Dissipation (Max)	290	450	290	329	mW
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	SOT-323	SOT-323	SC-70-3 (SOT-323)	SC-70-3 (SOT-323)	—
Product Status	Obsolete	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

SI2101A-TP is the primary substitute for direct replacement in applications where the SI2101-TP is no longer available. Both parts are manufactured by Micro Commercial Co, share identical Vdss (20V), package format (SOT-323), operating temperature range (-55°C to 150°C), and RoHS3 compliance. The SI2101A-TP offers enhanced performance with higher continuous drain current (2A) and increased power dissipation capability (450mW), making it suitable for applications requiring higher current handling. The lower gate threshold voltage (1V vs. 1.2V) may require gate drive circuit evaluation. Product status is active with established supply availability.

NTS4101PT1G (onsemi) provides an alternative substitute matching the SI2101-TP's 20V Vdss rating and maintaining equivalent continuous drain current (1.37A). This part is fully RoHS3 compliant with identical operating temperature range. The slightly higher Rds On (120mOhm vs. 100mOhm) and increased input capacitance (840pF @ 20V) represent minor performance variations. Product status is active with high inventory availability (65,400 pcs).

NTS2101PT1G (onsemi) is applicable only in applications where the reduced Vdss rating (8V) is acceptable. This part matches the SI2101-TP's continuous drain current (1.4A), Rds On (100mOhm @ 1A, 4.5V), and power dissipation (290mW) specifications. RoHS3 compliance and operating temperature range are identical. Product status is active with substantial inventory (125,100 pcs).

All substitute parts maintain RoHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and surface mount SOT-323 package compatibility, ensuring compliance with environmental and manufacturing standards.

Frequently Asked Questions (FAQ)

Q: Can SI2101A-TP directly replace SI2101-TP in all applications?

A: SI2101A-TP is a direct functional replacement for SI2101-TP in applications operating at or below 20V drain-to-source voltage and 1.4A continuous drain current. Both parts share identical package (SOT-323), temperature range (-55°C to 150°C), and RoHS3 compliance. The SI2101A-TP's higher current rating (2A) and power dissipation (450mW) provide design margin. Gate drive circuits must accommodate the lower threshold voltage (1V vs. 1.2V).

Q: What is the key difference between NTS2101PT1G and SI2101-TP?

A: NTS2101PT1G differs from SI2101-TP in drain-to-source voltage rating: 8V versus 20V. All other electrical parameters—continuous drain current (1.4A), Rds On (100mOhm @ 1A, 4.5V), power dissipation (290mW), and input capacitance (640pF)—are identical. NTS2101PT1G is suitable only for applications with maximum supply voltages of 8V.

Q: Is NTS4101PT1G suitable for 20V applications?

A: Yes. NTS4101PT1G is rated for 20V drain-to-source voltage, matching SI2101-TP. Continuous drain current is 1.37A (equivalent to 1.4A specification). Rds On is 120mOhm @ 1A, 4.5V, representing a 20% increase over SI2101-TP's 100mOhm specification. This difference is acceptable in most switching applications. Input capacitance is higher (840pF @ 20V vs. 640pF @ 8V), which may affect switching speed in high-frequency circuits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. SI2101A-TP, NTS2101PT1G, and NTS4101PT1G are all RoHS3 compliant with MSL Level 1 (unlimited moisture sensitivity), matching SI2101-TP's environmental compliance status.

Q: What is the package compatibility between SI2101-TP and substitute parts?

A: All substitute parts use SOT-323 package format (also designated SC-70 or SC-70-3), ensuring PCB footprint and land pattern compatibility with SI2101-TP. Surface mount assembly processes remain unchanged.

Q: Which substitute part has the best supply availability?

A: NTS2101PT1G has the highest inventory (125,100 pcs), followed by NTS4101PT1G (65,400 pcs) and SI2101A-TP (4,119 pcs). Supply availability should be evaluated against application voltage requirements.

Q: Can NTS2101PT1G be used in a 20V application?

A: No. NTS2101PT1G is rated for maximum 8V drain-to-source voltage. Using this part in a 20V application exceeds its voltage rating and will result in device failure.

Q: How do gate threshold voltages differ among these parts?

A: SI2101-TP has Vgs(th) of 1.2V @ 250µA. SI2101A-TP and NTS2101PT1G both have 1V @ 250µA, requiring lower gate drive voltage. NTS4101PT1G has 1.5V @ 250µA, requiring higher gate drive voltage. Gate drive circuits must be designed to accommodate these threshold variations.

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