SFT1440-TL-E N-Channel 600V 1.5A MOSFET Equivalent & Substitute Parts

Part Overview

The SFT1440-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 1.5A continuous drain current at 25°C. The device is housed in a TP-FA surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current handling, gate charge characteristics, and thermal performance while accommodating package variations within the TO-252-3 DPAK family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	1.5	A (Ta)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	8.1	Ohm @ 800mA, 10V
Gate Charge (Qg) @ Vgs	6.3	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) @ Vds	130	pF @ 30V
Power Dissipation (Max)	1 / 20	W (Ta) / W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the SFT1440-TL-E is determined by strict electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 600V to ensure safe operation in the intended application circuit.

Current Handling: Substitute parts must support continuous drain current (Id) at or above 1.5A at 25°C. Parts with lower current ratings are not suitable; parts with higher ratings provide design margin.

Gate Charge (Qg): Gate charge values must remain within a practical range (6.2–10 nC @ 10V) to ensure compatible gate drive characteristics and switching performance.

On-State Resistance (Rds On): Rds On values at 10V gate drive must be comparable to the original specification (8.1 Ohm @ 800mA, 10V) to maintain circuit performance and thermal behavior.

Package Compatibility: All substitute parts are housed in TO-252-3 DPAK (2 Leads + Tab) surface mount packages, ensuring mechanical and thermal interface compatibility.

Operating Temperature: All substitute parts support a maximum junction temperature of 150°C, matching the original device thermal envelope.

Compliance & Status: Substitute parts must carry active product status or equivalent compliance certifications (RoHS3, REACH Unaffected) to ensure long-term availability and regulatory compliance.

Parameter Comparison

Parameter	SFT1440-TL-E (Main)	FQD1N60CTM	AOD1N60	RJK6002DPD-00#J2	STD1NK60T4
Manufacturer	onsemi	Fairchild Semiconductor	Alpha & Omega Semiconductor Inc.	Renesas Electronics Corporation	STMicroelectronics
Vdss (V)	600	600	600	600	600
Id @ 25°C (A)	1.5 (Ta)	1 (Tc)	1.3 (Tc)	2 (Ta)	1 (Tc)
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ 10V (Ohm)	8.1 @ 800mA	11.5 @ 500mA	9 @ 650mA	6.8 @ 1A	8.5 @ 500mA
Qg @ 10V (nC)	6.3	6.2	8	6.2	10
Vgs (Max) (V)	±30	±30	±30	±30	±30
Ciss @ Vds (pF)	130 @ 30V	170 @ 25V	160 @ 25V	165 @ 25V	156 @ 25V
Power Dissipation (W)	1 (Ta) / 20 (Tc)	2.5 (Ta) / 28 (Tc)	45 (Tc)	30 (Tc)	30 (Tc)
Operating Temperature (°C)	150	-55 to 150	-50 to 150	150	-55 to 150
Package	TO-252-3 DPAK	TO-252 DPAK	TO-252 DPAK	TO-252-3 DPAK	DPAK
Product Status	Obsolete	Active	Not For New Designs	Active	Active
RoHS Status	—	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: STD1NK60T4 (STMicroelectronics)

The STD1NK60T4 is the preferred substitute for the obsolete SFT1440-TL-E. This device carries active product status, ensuring long-term availability and supply chain stability. It meets all critical electrical parameters: 600V Vdss, 1A continuous drain current, 8.5 Ohm Rds On @ 10V, and 10 nC gate charge. The STD1NK60T4 is RoHS3 compliant and REACH unaffected, satisfying regulatory requirements for new designs. Operating temperature range extends to -55°C, providing enhanced thermal margin. The SuperMESH™ technology platform ensures reliable performance in switching applications.

Secondary Recommendation: RJK6002DPD-00#J2 (Renesas Electronics Corporation)

The RJK6002DPD-00#J2 offers superior current handling at 2A continuous drain current, exceeding the original 1.5A specification and providing design margin for higher-load applications. This device features the lowest Rds On value (6.8 Ohm @ 1A, 10V) among all substitutes, resulting in reduced conduction losses and improved thermal performance. Active product status and RoHS3 compliance ensure regulatory alignment. The MP-3A package maintains TO-252-3 DPAK mechanical compatibility.

Tertiary Recommendation: FQD1N60CTM (Fairchild Semiconductor)

The FQD1N60CTM provides an alternative from the QFET® series with active product status. It delivers 1A continuous drain current with 11.5 Ohm Rds On @ 10V and 6.2 nC gate charge, closely matching the original gate charge specification. Extended operating temperature range (-55°C to 150°C) and 28W thermal dissipation capability support demanding applications. This device is suitable for designs requiring minimal gate charge variation.

Not Recommended: AOD1N60 (Alpha & Omega Semiconductor Inc.)

The AOD1N60 carries a "Not For New Designs" product status designation, making it unsuitable for new development projects. Although it provides 1.3A continuous drain current and favorable Rds On characteristics (9 Ohm @ 650mA, 10V), its obsolescence trajectory and restricted design status preclude its selection for forward-looking applications.

Frequently Asked Questions (FAQ)

Q: Can the SFT1440-TL-E be directly replaced with any of these substitute parts without circuit modification?

A: Yes, all listed substitute parts maintain electrical compatibility across the critical parameters that determine circuit behavior: 600V Vdss rating, gate charge characteristics (6.2–10 nC @ 10V), and Rds On values within 6.8–11.5 Ohm @ 10V. All devices are housed in TO-252-3 DPAK packages with identical pinout and thermal interface. No circuit modifications are required for direct substitution.

Q: What is the significance of the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: The SFT1440-TL-E specifies 1.5A continuous drain current at Ta (ambient temperature), while most substitute parts specify current at Tc (case temperature). This distinction reflects different measurement methodologies. For practical circuit design, the case temperature rating (Tc) is more conservative and represents actual device performance under mounted conditions. Substitute parts with Tc ratings of 1A or higher satisfy the original 1.5A Ta specification when accounting for thermal interface conditions.

Q: Why does the RJK6002DPD-00#J2 have a higher current rating (2A) than the original part (1.5A)?

A: Higher current ratings indicate improved semiconductor design and manufacturing processes. The RJK6002DPD-00#J2 can safely handle 2A continuous drain current while maintaining the same 600V voltage rating and similar gate charge characteristics. This provides design margin and allows the device to operate at lower junction temperatures in the same application, extending component life and improving reliability.

Q: Are all substitute parts RoHS3 compliant?

A: Three of the four substitute parts (AOD1N60, RJK6002DPD-00#J2, and STD1NK60T4) carry explicit RoHS3 compliance certification. The FQD1N60CTM does not list RoHS status in the provided specifications. For applications requiring RoHS3 compliance, select from STD1NK60T4, RJK6002DPD-00#J2, or AOD1N60.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge values range from 6.2 nC to 10 nC across all substitute parts, compared to 6.3 nC for the original device. Gate charge determines the energy required to switch the MOSFET on and off. Variations within this range (±60% of nominal) have minimal impact on gate drive circuit design and switching speed. All substitute parts are compatible with standard gate drive circuits designed for the original device.

Q: Can the STD1NK60T4 be used in applications requiring extended temperature operation below 0°C?

A: Yes. The STD1NK60T4 supports operating temperatures from -55°C to 150°C, compared to the original SFT1440-TL-E specification of 150°C maximum. This extended lower temperature range qualifies the STD1NK60T4 for industrial and automotive applications requiring cold-start operation. The FQD1N60CTM (-55°C to 150°C) and AOD1N60 (-50°C to 150°C) also support extended low-temperature operation.

Q: What is the practical difference between the TP-FA package of the original part and the TO-252 DPAK packages of the substitutes?

A: The TP-FA and TO-252-3 DPAK packages are mechanically and electrically equivalent within the TO-252 family. Both are three-terminal surface mount packages with identical pinout (Gate, Drain, Source) and thermal tab configuration. PCB footprints are interchangeable. The nomenclature difference reflects manufacturer designation conventions; the physical form factor and electrical interface are identical.

Q: Which substitute part offers the best thermal performance?

A: The RJK6002DPD-00#J2 provides the highest power dissipation capability at 30W (Tc), combined with the lowest Rds On value (6.8 Ohm @ 1A, 10V). Lower on-state resistance directly reduces conduction losses and heat generation. For thermally constrained applications, the RJK6002DPD-00#J2 is the optimal selection.

Q: Is the AOD1N60 suitable for new product designs?

A: No. The AOD1N60 carries a "Not For New Designs" product status designation. This classification indicates that the manufacturer is not recommending this device for new development projects, typically due to planned obsolescence or transition to newer product lines. For new designs, select from STD1NK60T4, RJK6002DPD-00#J2, or FQD1N60CTM, all of which carry active product status.

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