SFT1423-TL-E Equivalent & Substitute Parts

Part Overview

The SFT1423-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in a TO-252-3 (DPAK) surface mount configuration and is designed for applications requiring moderate voltage and current handling in a compact form factor.

The SFT1423-TL-E is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Substiute Parts

SFT1423-TL-E

onsemiIn Stock: 15446SFT1423-TL-E Datasheet

Current PartRFQ

IXTY08N50D2

IXYSIn Stock: 1216IXTY08N50D2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SFT1423-TL-E is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 500V to ensure safe operation in the intended application circuit.

Package Configuration: The substitute part must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and assembly processes.

FET Type and Technology: The substitute part must be an N-Channel MOSFET using Metal Oxide Semiconductor technology to maintain functional equivalence.

Gate Voltage Rating: The substitute part must support a maximum gate voltage (Vgs Max) of ±20V to ensure compatibility with existing gate drive circuits.

Current Handling: While the SFT1423-TL-E is rated for 2A continuous drain current, substitute parts with equal or greater current ratings at the specified voltage are acceptable, provided all other parameters remain within compatible ranges.

Thermal and Compliance Requirements: The substitute part must maintain MSL rating of 1 (Unlimited) and REACH Unaffected status to ensure compliance with manufacturing and environmental standards.

Parameter Comparison

Engineering Selection Recommendations

IXTY08N50D2 as Primary Substitute:

The IXTY08N50D2 manufactured by IXYS is a direct substitute for the obsolete SFT1423-TL-E. Both devices share identical voltage ratings (500V Vdss), identical package configuration (TO-252-3 DPAK), and identical gate voltage specifications (±20V Vgs Max). Both devices maintain MSL 1 (Unlimited) and REACH Unaffected compliance status.

The IXTY08N50D2 is classified as an active product, ensuring ongoing availability and supply chain continuity. The continuous drain current rating of the IXTY08N50D2 is 800mA at Tc, which is lower than the SFT1423-TL-E rating of 2A at Ta. This difference requires circuit-level evaluation to confirm suitability for the intended application. The IXTY08N50D2 offers superior power dissipation capability (60W at Tc versus 20W at Tc for the SFT1423-TL-E), providing enhanced thermal performance in applications with sustained power requirements.

On-state resistance values are comparable (4.6 Ohm versus 4.9 Ohm), and gate charge specifications are within acceptable engineering tolerances for most switching applications. The extended operating temperature range of the IXTY08N50D2 (-55°C to 150°C) provides additional margin for temperature-sensitive applications.

Frequently Asked Questions (FAQ)

Q: Can the IXTY08N50D2 be used as a direct replacement for the SFT1423-TL-E in all applications?

A: The IXTY08N50D2 shares the same voltage rating, package type, and gate voltage specifications as the SFT1423-TL-E. However, the continuous drain current rating differs (800mA versus 2A). Applications requiring sustained currents above 800mA must be re-evaluated. Thermal performance and power dissipation characteristics must be verified against circuit requirements.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: Drain to Source Voltage (Vdss) of 500V, N-Channel MOSFET technology, Gate Voltage (Vgs Max) of ±20V, and TO-252-3 DPAK surface mount package configuration. These parameters ensure functional and mechanical equivalence in the target application.

Q: Are there any compliance or regulatory differences between the SFT1423-TL-E and IXTY08N50D2?

A: Both devices maintain MSL 1 (Unlimited) and REACH Unaffected status. The IXTY08N50D2 is RoHS3 Compliant, providing additional environmental compliance assurance. Both devices carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: How do the thermal characteristics compare between these devices?

A: The SFT1423-TL-E is rated for 1W at Ta and 20W at Tc. The IXTY08N50D2 is rated for 60W at Tc, indicating superior thermal performance. Applications with high power dissipation requirements benefit from the IXTY08N50D2's enhanced thermal capability.

Q: What is the significance of the different gate charge specifications?

A: The SFT1423-TL-E has a gate charge of 8.7 nC at 10V, while the IXTY08N50D2 has 12.7 nC at 5V. Gate charge affects switching speed and gate drive circuit requirements. Higher gate charge may require adjustment to gate drive timing in high-frequency switching applications.

Q: Are the input capacitance values compatible for circuit design purposes?

A: The SFT1423-TL-E has input capacitance of 175 pF at 30V, while the IXTY08N50D2 has 312 pF at 25V. The higher capacitance of the IXTY08N50D2 may affect switching characteristics and gate drive circuit performance. Circuit simulation or testing is appropriate to confirm compatibility in high-frequency applications.

Q: Why is the SFT1423-TL-E classified as obsolete?

A: The SFT1423-TL-E is no longer in active production. The IXTY08N50D2 provides equivalent functionality with active product status, ensuring long-term availability and supply chain reliability for new designs and ongoing production support.