SFT1202-TL-E Equivalent & Substitute Parts

Part Overview

The SFT1202-TL-E is an NPN Bipolar Junction Transistor (BJT) manufactured by onsemi, rated for 150V collector-emitter breakdown voltage and 2A maximum collector current. This surface mount device in TO-252-3 (DPAK) packaging is designed for general-purpose switching and amplification applications requiring 1W power dissipation capability.

The SFT1202-TL-E carries an Obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

SFT1202-TL-E
onsemiIn Stock: 32661SFT1202-TL-E Datasheet
SFT1202-TL-E
Current Part
2SC4027T-TL-E
onsemiIn Stock: 172062SC4027T-TL-E Datasheet
2SC4027T-TL-E
Similar
ZXTN4004KTC
Diodes IncorporatedIn Stock: 20708ZXTN4004KTC Datasheet
ZXTN4004KTC
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 150 V
Current - Collector (Ic) (Max) 2 A
Power - Max 1 W
Frequency - Transition 140 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic 165mV @ 100mA, 1A
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Operating Temperature (Max) 150 °C (TJ)

Substitute Part Grouping Explanation

Substitution of the SFT1202-TL-E is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor Type: NPN configuration required
  • Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 150V
  • Current - Collector (Ic) (Max): Must equal or exceed 2A for direct substitution; lower ratings acceptable for current-limited applications
  • Power - Max: Must equal or exceed 1W
  • DC Current Gain (hFE): Minimum 100 at specified operating conditions
  • Vce Saturation: Lower saturation voltage preferred for efficiency

Mechanical Compatibility Criteria:

  • Package / Case: TO-252-3 (DPAK) form factor required
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA or equivalent TO-252-3 designation

Compliance & Certification:

  • RoHS3 Compliance required
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) preferred
  • REACH Status: REACH Unaffected

Substitute parts identified below meet these criteria within the constraints of available component specifications.

Parameter Comparison

Parameter SFT1202-TL-E (Main) 2SC4027T-TL-E ZXTN4004KTC
Manufacturer onsemi onsemi Diodes Incorporated
Product Status Obsolete Active Active
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 150V 160V 150V
Current - Collector (Ic) (Max) 2A 1.5A 1A
Power - Max 1W 1W 3.8W
Frequency - Transition 140MHz 120MHz
DC Current Gain (hFE) (Min) 200 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 150mA, 250mV
Vce Saturation (Max) 165mV @ 100mA, 1A 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 50nA
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Mounting Type Surface Mount Surface Mount Surface Mount
Operating Temperature (Max) 150°C (TJ) 150°C (TJ) 150°C (TJ)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

2SC4027T-TL-E (onsemi)

The 2SC4027T-TL-E is an Active product from onsemi, the original manufacturer of the SFT1202-TL-E. This substitute maintains identical packaging (TO-252-3 DPAK), mounting type (Surface Mount), and thermal rating (150°C). Electrical parameters are compatible for applications where collector current does not exceed 1.5A. The 160V breakdown voltage rating exceeds the original 150V specification. DC current gain is lower (100 vs. 200), and Vce saturation is higher (450mV vs. 165mV), which may impact efficiency in saturation-mode switching applications. This part is suitable for designs tolerant of reduced current gain and higher saturation losses. RoHS3 compliance and MSL 1 rating match the original specification.

ZXTN4004KTC (Diodes Incorporated)

The ZXTN4004KTC is an Active product from Diodes Incorporated, providing an alternative source for NPN BJT functionality. This substitute maintains identical packaging (TO-252-3 DPAK) and mounting type (Surface Mount). The 150V breakdown voltage matches the original specification exactly. Maximum collector current is 1A, which is lower than both the original (2A) and the 2SC4027T-TL-E (1.5A). Power dissipation capability is significantly higher at 3.8W compared to 1W, providing thermal margin for applications with lower current requirements. DC current gain is 100 at different operating conditions (150mA, 250mV). Collector cutoff current is lower (50nA vs. 1µA), indicating superior leakage characteristics. RoHS3 compliance and MSL 1 rating match the original specification. This part is suitable for low-current applications requiring superior thermal performance and leakage characteristics.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4027T-TL-E directly replace the SFT1202-TL-E in all applications?

A: The 2SC4027T-TL-E is mechanically and electrically compatible for applications where collector current does not exceed 1.5A. However, the lower DC current gain (100 vs. 200) and higher Vce saturation (450mV vs. 165mV) may affect circuit performance in saturation-mode switching applications. Circuit simulation or bench testing is appropriate to confirm suitability for specific designs.

Q: What are the current limitations of the ZXTN4004KTC substitute?

A: The ZXTN4004KTC is rated for a maximum collector current of 1A, compared to 2A for the SFT1202-TL-E. This part is suitable only for applications where the design current does not exceed 1A. The higher power dissipation rating (3.8W vs. 1W) does not compensate for the reduced current capacity.

Q: Are all three parts RoHS3 compliant?

A: Yes. The SFT1202-TL-E, 2SC4027T-TL-E, and ZXTN4004KTC are all ROHS3 Compliant with MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status.

Q: Why does the ZXTN4004KTC have a higher power rating despite lower current capacity?

A: Power dissipation capability depends on both current capacity and thermal design. The ZXTN4004KTC achieves 3.8W through superior thermal characteristics in the TO-252-3 package, while the SFT1202-TL-E is rated for 1W. The higher power rating does not indicate higher current capacity; it reflects the device's ability to dissipate heat more efficiently at lower current levels.

Q: Are there packaging differences between these parts?

A: All three parts use identical TO-252-3 (DPAK, 2 Leads + Tab, SC-63) surface mount packaging. The SFT1202-TL-E and 2SC4027T-TL-E use TP-FA supplier device packaging, while the ZXTN4004KTC uses TO-252-3 designation. These are equivalent package specifications suitable for the same PCB footprints.

Q: What is the significance of the transition frequency difference between SFT1202-TL-E (140MHz) and 2SC4027T-TL-E (120MHz)?

A: Transition frequency (fT) indicates the frequency at which current gain drops to unity. The SFT1202-TL-E has a higher fT (140MHz vs. 120MHz), making it more suitable for higher-frequency switching applications. The 2SC4027T-TL-E is suitable for applications operating below 120MHz. The ZXTN4004KTC does not specify transition frequency in the provided data.

Q: Can the ZXTN4004KTC be used in high-frequency applications?

A: Transition frequency data for the ZXTN4004KTC is not provided in the component specifications. Applications requiring operation above 120MHz should use the SFT1202-TL-E or confirm ZXTN4004KTC frequency performance through the manufacturer's detailed datasheet.

Q: What is the difference in collector cutoff current between these parts?

A: The SFT1202-TL-E and 2SC4027T-TL-E specify 1µA (ICBO) collector cutoff current. The ZXTN4004KTC specifies 50nA, which is significantly lower. Lower cutoff current indicates reduced leakage in the off state, beneficial for low-power or precision applications where leakage current must be minimized.

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