SFP9Z24 Equivalent & Substitute Parts

Part Overview

The SFP9Z24 is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 9.7A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220-3 configuration and is designed for applications requiring P-channel switching and amplification in the 60V class. The SFP9Z24 carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Substiute Parts

SFP9Z24

onsemiIn Stock: 4238SFP9Z24 Datasheet

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IRF9Z24PBF

Vishay SiliconixIn Stock: 5242IRF9Z24PBF Datasheet

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STP10P6F6

STMicroelectronicsIn Stock: 15250STP10P6F6 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the SFP9Z24 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Mounting Type: Through Hole
• Package Family: TO-220 variants

Functional Compatibility Parameters:

• Continuous Drain Current (Id) @ 25°C: Minimum 9.7A
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
• Drive Voltage: 10V
• Operating Temperature Range: -55°C to 175°C

Acceptable Variation Parameters:

• Rds On (Max): Up to 280mOhm at specified conditions
• Gate Charge (Qg): Up to 19nC @ 10V
• Input Capacitance (Ciss): Up to 600pF @ 25V
• Power Dissipation (Max): 49W or greater
• Vgs (Max): ±20V or greater

Substitute parts must maintain P-Channel topology, 60V Vdss rating, Through Hole mounting, and TO-220 package family compatibility. Current rating must equal or exceed 9.7A. All other parameters must fall within the specified ranges to ensure functional equivalence in existing circuit designs.

Parameter Comparison

Engineering Selection Recommendations

IRF9Z24PBF (Vishay Siliconix)

The IRF9Z24PBF is a direct functional equivalent to the SFP9Z24. It matches all critical electrical parameters: 60V Vdss, P-Channel topology, 11A continuous drain current (exceeding the 9.7A requirement), and identical gate threshold voltage and drive voltage specifications. The device is packaged in TO-220AB, which is mechanically compatible with TO-220-3 footprints. The IRF9Z24PBF carries Active product status and ROHS3 compliance, providing long-term availability and regulatory alignment. The higher power dissipation rating (60W vs. 49W) and increased current capability (11A vs. 9.7A) provide design margin. This part is suitable for direct substitution in new designs and ongoing production.

STP10P6F6 (STMicroelectronics)

The STP10P6F6 meets the core electrical requirements: 60V Vdss, P-Channel topology, 10A continuous drain current, and matching gate threshold voltage. The device is packaged in TO-220, compatible with TO-220-3 footprints. The STP10P6F6 features lower on-resistance (160mOhm vs. 280mOhm) and significantly lower gate charge (6.4nC vs. 19nC), resulting in improved switching efficiency and reduced gate drive requirements. However, the power dissipation rating is lower (30W vs. 49W), and the product status is Obsolete. The STP10P6F6 is suitable for applications where thermal dissipation is not a limiting factor and where the improved switching characteristics provide circuit benefits.

Frequently Asked Questions (FAQ)

Q: Can the IRF9Z24PBF replace the SFP9Z24 in existing designs?

A: Yes. The IRF9Z24PBF is electrically and mechanically compatible with the SFP9Z24. Both devices share identical Vdss (60V), Vgs(th) (4V @ 250µA), and drive voltage (10V) specifications. The TO-220AB package is footprint-compatible with TO-220-3. The higher current rating (11A vs. 9.7A) and power dissipation (60W vs. 49W) provide additional design margin.

Q: What are the key differences between the IRF9Z24PBF and STP10P6F6?

A: The IRF9Z24PBF provides higher power dissipation (60W vs. 30W) and matches the original Rds On specification (280mOhm). The STP10P6F6 offers superior switching performance with lower gate charge (6.4nC vs. 19nC) and lower on-resistance (160mOhm vs. 280mOhm), but has reduced power dissipation capability. Selection depends on thermal requirements and switching speed priorities.

Q: Are there package compatibility concerns with TO-220 variants?

A: The SFP9Z24 (TO-220-3), IRF9Z24PBF (TO-220AB), and STP10P6F6 (TO-220) are all Through Hole TO-220 family packages. Pin configurations and footprints are compatible for direct PCB mounting. Verify lead spacing and mounting hole alignment with your specific PCB design.

Q: What is the significance of the Obsolete product status for SFP9Z24 and STP10P6F6?

A: Obsolete status indicates that the manufacturer has discontinued production. The IRF9Z24PBF carries Active status, ensuring ongoing availability and manufacturing support. For new designs, the IRF9Z24PBF is the recommended choice. For legacy system support, existing inventory of SFP9Z24 or STP10P6F6 may be available through authorized distributors.

Q: How do the gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The SFP9Z24 and IRF9Z24PBF both specify 19nC @ 10V, requiring identical gate drive circuitry. The STP10P6F6 specifies 6.4nC @ 10V, allowing use of lower-power gate drivers and reducing switching losses. If gate drive capability is limited, the STP10P6F6 offers an advantage.

Q: What compliance certifications should be considered for procurement?

A: The IRF9Z24PBF is ROHS3 compliant, meeting current environmental regulations. The SFP9Z24 and STP10P6F6 are REACH Unaffected and ROHS3 compliant respectively. For applications requiring specific regulatory compliance, verify certification status against your requirements.