SFP9630 Equivalent & Substitute Parts

Part Overview

The SFP9630 is a P-Channel MOSFET rated for 200V drain-to-source voltage with 6.5A continuous drain current in a Through Hole TO-220-3 package. Manufactured by onsemi, this device is classified as obsolete product status. Due to its obsolete classification, identifying equivalent substitute components with matching electrical and mechanical specifications is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

SFP9630
onsemiIn Stock: 1514SFP9630 Datasheet
SFP9630
Current Part
IRF9630PBF
Vishay SiliconixIn Stock: 50400IRF9630PBF Datasheet
IRF9630PBF
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6.5 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 800 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 965 pF @ 25V
Power Dissipation (Max) 70 W (Tc)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute components for the SFP9630 are identified based on strict electrical and mechanical parameter matching within the P-Channel MOSFET category. The substitution criteria are:

Primary Matching Parameters:

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ specified current and voltage
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 or compatible variant

The IRF9630PBF from Vishay Siliconix meets these criteria with equivalent electrical performance and compatible packaging. Both devices operate within the same voltage and current specifications, share identical threshold voltage characteristics, and support the same operating temperature range.

Parameter Comparison

Parameter SFP9630 (onsemi) IRF9630PBF (Vishay Siliconix) Unit
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 200 V
Current - Continuous Drain (Id) @ 25°C 6.5 6.5 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 800 @ 3.3A, 10V 800 @ 3.9A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 36 @ 10V 29 @ 10V nC
Vgs (Max) ±30 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 965 @ 25V 700 @ 25V pF
Power Dissipation (Max) 70 74 W (Tc)
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

The IRF9630PBF is a direct electrical and mechanical substitute for the SFP9630. Both devices share identical voltage and current ratings, threshold voltage characteristics, and operating temperature specifications. The IRF9630PBF offers the advantage of active product status, ensuring continued availability and manufacturing support.

Key compliance considerations:

  • Both components maintain REACH Unaffected status and EAR99 export classification
  • Both devices carry MSL 1 (Unlimited) moisture sensitivity rating
  • The IRF9630PBF includes RoHS3 compliance certification, providing additional regulatory alignment for modern manufacturing environments
  • Packaging compatibility is confirmed: both use TO-220-3 Through Hole configuration

The IRF9630PBF demonstrates superior performance in gate charge (29 nC versus 36 nC) and input capacitance (700 pF versus 965 pF), resulting in faster switching characteristics. Power dissipation rating is marginally higher (74W versus 70W), providing additional thermal margin. The maximum gate-source voltage specification differs (±20V versus ±30V); applications requiring the full ±30V range must account for this parameter variance.

Frequently Asked Questions (FAQ)

Q: Can the IRF9630PBF directly replace the SFP9630 in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (200V), continuous drain current (6.5A), drive voltage (10V), and threshold voltage (4V @ 250µA) specifications. Through Hole TO-220-3 packaging is compatible. The IRF9630PBF's lower gate charge and input capacitance provide improved switching performance.

Q: What is the significance of the SFP9630 being classified as obsolete?

A: Obsolete classification indicates the manufacturer (onsemi) has discontinued production. The IRF9630PBF, with active product status from Vishay Siliconix, ensures long-term component availability and manufacturing continuity for new production and field repairs.

Q: Are there package compatibility concerns between TO-220-3 and TO-220AB?

A: Both designations refer to the same Through Hole TO-220 package family with three leads. Pin configuration and mechanical dimensions are compatible for direct board-level substitution.

Q: How do the gate charge differences affect circuit performance?

A: The IRF9630PBF exhibits lower gate charge (29 nC versus 36 nC at 10V). This results in faster gate charging and discharging cycles, enabling higher switching frequencies and reduced gate drive power requirements. Applications with fixed gate drive circuits will experience improved efficiency.

Q: What is the impact of the Vgs (Max) specification difference?

A: The SFP9630 permits ±30V gate-source voltage, while the IRF9630PBF limits this to ±20V. Designs operating within ±20V gate voltage range experience no restriction. Applications requiring the full ±30V range must implement gate voltage clamping or select alternative components.

Q: Does the IRF9630PBF's RoHS3 compliance affect substitution decisions?

A: RoHS3 compliance is advantageous for modern manufacturing environments and regulatory alignment. The SFP9630 does not specify RoHS status. For applications subject to RoHS requirements, the IRF9630PBF provides explicit compliance certification.

Q: Are thermal characteristics equivalent between these devices?

A: Both devices operate across -55°C to 150°C junction temperature range. The IRF9630PBF provides 74W maximum power dissipation versus 70W for the SFP9630, offering 5.7% additional thermal capacity. Thermal management design based on the SFP9630 specifications remains valid for the IRF9630PBF.

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