SFP9530 MOSFET P-Channel 100V 10.5A Equivalent & Substitute Parts

Part Overview

The SFP9530 is a P-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 100V drain-to-source voltage and 10.5A continuous drain current in a Through Hole TO-220-3 package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts maintain functional compatibility through matching or exceeding critical electrical parameters while preserving the same package form factor and thermal characteristics.

Substiute Parts

SFP9530
onsemiIn Stock: 23211SFP9530 Datasheet
SFP9530
Current Part
FQP17P10
onsemiIn Stock: 15455FQP17P10 Datasheet
FQP17P10
MFR Recommended
IRF9530NPBF
Infineon TechnologiesIn Stock: 125489IRF9530NPBF Datasheet
IRF9530NPBF
Similar
IRF9530PBF
Vishay SiliconixIn Stock: 4022IRF9530PBF Datasheet
IRF9530PBF
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 10.5 A
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.3A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 4 V @ 250µA
Power Dissipation (Max) 66 W
Operating Temperature Range -55 to 175 °C
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitute parts for the SFP9530 are selected based on the following critical parameters that determine functional compatibility:

Mandatory Matching Parameters:

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 100V minimum
  • Package / Case: TO-220-3 or TO-220AB (compatible through-hole packages)
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 175°C

Performance Parameters (Equal or Superior):

  • Continuous Drain Current (Id) @ 25°C: 10.5A or greater
  • Rds On (Max): 300 mOhm or lower (at equivalent or higher current rating)
  • Gate Threshold Voltage Vgs(th): 4V or lower
  • Power Dissipation (Max): 66W or greater

Substitute parts meeting these criteria provide direct functional replacement while maintaining electrical performance and thermal handling characteristics. Parts exceeding these parameters offer enhanced performance margins without introducing incompatibility.

Parameter Comparison

Parameter SFP9530 (Main) FQP17P10 (MFR Recommended) IRF9530NPBF (Similar) IRF9530PBF (Similar)
Manufacturer onsemi onsemi Infineon Technologies Vishay Siliconix
FET Type P-Channel P-Channel P-Channel P-Channel
Vdss (V) 100 100 100 100
Id @ 25°C (A) 10.5 16.5 14 12
Rds On (Max) (mOhm) 300 @ 5.3A, 10V 190 @ 8.25A, 10V 200 @ 8.4A, 10V 300 @ 7.2A, 10V
Vgs(th) (Max) (V) 4 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA
Gate Charge Qg (Max) (nC) 38 @ 10V 39 @ 10V 58 @ 10V 38 @ 10V
Power Dissipation (Max) (W) 66 100 79 88
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package / Case TO-220-3 TO-220-3 TO-220AB TO-220AB
Product Status Obsolete Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQP17P10 (onsemi) — Manufacturer Recommended Substitute

The FQP17P10 is the primary substitute for the obsolete SFP9530. This part is manufactured by onsemi, the original manufacturer of the SFP9530, ensuring design continuity and process consistency. The FQP17P10 exceeds the SFP9530 in continuous drain current (16.5A vs. 10.5A), power dissipation (100W vs. 66W), and on-resistance performance (190 mOhm vs. 300 mOhm). Both devices share identical Vdss (100V), Vgs(th) (4V), and operating temperature range (-55°C to 175°C). The FQP17P10 maintains TO-220-3 package compatibility and is ROHS3 compliant. Product status is Active with 15,434 units in stock.

IRF9530NPBF (Infineon Technologies) — Alternative Substitute

The IRF9530NPBF is an active alternative manufactured by Infineon Technologies under the HEXFET® series. This device meets the 100V Vdss and 4V Vgs(th) requirements with 14A continuous drain current and 79W power dissipation. On-resistance is 200 mOhm at 8.4A and 10V, providing improved performance over the SFP9530. The package is TO-220AB, which is mechanically and electrically compatible with TO-220-3 applications. Gate charge is elevated at 58 nC compared to 38 nC for the SFP9530, which may affect switching speed in high-frequency applications. Product status is Active with 125,400 units in stock. ROHS3 compliant.

IRF9530PBF (Vishay Siliconix) — Alternative Substitute

The IRF9530PBF is an active alternative manufactured by Vishay Siliconix. This device provides 12A continuous drain current and 88W power dissipation with 300 mOhm on-resistance at 7.2A and 10V, matching the SFP9530 on-resistance specification. Vdss (100V) and Vgs(th) (4V) are identical to the main part. The package is TO-220AB, compatible with TO-220-3 applications. Gate charge matches the SFP9530 at 38 nC. Product status is Active with 3,961 units in stock. ROHS3 compliant. REACH status is Affected, requiring verification for applications subject to REACH regulations.

Frequently Asked Questions (FAQ)

Q: Can the FQP17P10 directly replace the SFP9530 in existing designs?

A: Yes. The FQP17P10 maintains identical Vdss (100V), Vgs(th) (4V), and operating temperature range (-55°C to 175°C) as the SFP9530. Superior current rating (16.5A vs. 10.5A), lower on-resistance (190 mOhm vs. 300 mOhm), and higher power dissipation (100W vs. 66W) provide enhanced performance margins. Both use TO-220-3 packaging. No circuit modifications are required.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: TO-220-3 and TO-220AB are both through-hole packages with three leads (Gate, Drain, Source) and identical pin spacing and mechanical dimensions. The designations reflect different manufacturing standards or lead finish specifications. Both are mechanically and electrically interchangeable in standard TO-220 footprints.

Q: Why does IRF9530NPBF have higher gate charge (58 nC) than the SFP9530 (38 nC)?

A: Gate charge is determined by the internal capacitance and switching characteristics of the device. The IRF9530NPBF's higher gate charge reflects its higher current rating (14A vs. 10.5A) and different internal structure. Higher gate charge requires longer switching times and increased driver current. This may impact switching frequency performance in high-speed applications but does not affect DC operation or thermal performance.

Q: Is the IRF9530PBF suitable for REACH-regulated applications?

A: The IRF9530PBF is listed as REACH Affected. Applications subject to REACH regulations must verify compliance status with the supplier or manufacturer before selection. The FQP17P10 and IRF9530NPBF are listed as REACH Unaffected and may be preferred for REACH-compliant designs.

Q: Can I use these substitutes in high-frequency switching applications?

A: All substitute parts maintain the same gate threshold voltage (4V) and operating temperature range as the SFP9530, supporting high-frequency operation. However, gate charge differences affect switching speed. The FQP17P10 and IRF9530PBF (38 nC) are preferred for applications requiring minimal switching delay. The IRF9530NPBF (58 nC) introduces longer switching times and may require driver circuit adjustment in high-frequency designs.

Q: What is the inventory status of these substitute parts?

A: FQP17P10 has 15,434 units in stock. IRF9530NPBF has 125,400 units in stock. IRF9530PBF has 3,961 units in stock. All are classified as New Original In Stock.

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