SFH154 Equivalent & Substitute Parts

Part Overview

The SFH154 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage and 34A continuous drain current in a Through Hole TO-3P package. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. The SFH154 delivers 204W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	34	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	75	mOhm @ 17A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	110	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	3370	pF @ 25V
Power Dissipation (Max)	204	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-3P	Through Hole

Substitute Part Grouping Explanation

Substitution of the SFH154 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 150V
Continuous Drain Current (Id) must equal or exceed 34A
On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
Operating temperature range must support the application environment

Mechanical Compatibility Criteria:

Package type must be TO-3P (Through Hole) to ensure direct board-level compatibility
Pin configuration must match the original device footprint

The IXTQ50N20P qualifies as a substitute based on these parameters: it exceeds the voltage rating (200V vs. 150V), provides higher current capacity (50A vs. 34A), maintains compatible gate drive characteristics, and shares the identical TO-3P package configuration.

Parameter Comparison

Parameter	SFH154 (onsemi)	IXTQ50N20P (IXYS)	Unit
Drain to Source Voltage (Vdss)	150	200	V
Continuous Drain Current (Id) @ 25°C	34	50	A (Tc)
On-State Resistance (Rds On Max)	75 @ 17A, 10V	60 @ 50A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 @ 250µA	5 @ 250µA	V
Gate Charge (Qg Max) @ Vgs	110 @ 10V	70 @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	3370 @ 25V	2720 @ 25V	pF
Power Dissipation (Max)	204	360	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 175	°C (TJ)
Package Type	TO-3P	TO-3P	Through Hole
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

SFH154 (onsemi): This device is classified as obsolete and carries REACH Unaffected status. While 680 pieces remain in stock, the obsolete classification indicates no further manufacturing or long-term availability.

IXTQ50N20P (IXYS): This device is classified as active with 5330 pieces in stock, ensuring supply continuity. The IXTQ50N20P is RoHS3 Compliant and carries REACH Unaffected status, meeting current regulatory requirements. The higher voltage rating (200V), increased current capacity (50A), and extended temperature range (-55°C to 175°C) provide design margin beyond the original SFH154 specifications. Lower gate charge (70nC vs. 110nC) and reduced input capacitance (2720pF vs. 3370pF) result in faster switching characteristics.

For applications requiring direct replacement of the SFH154, the IXTQ50N20P is the qualified substitute, offering superior electrical performance and active product status.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ50N20P directly replace the SFH154 in existing designs?

A: Yes. Both devices share the TO-3P Through Hole package configuration, identical pin assignments, and compatible gate drive voltage requirements (10V). The IXTQ50N20P exceeds all critical electrical parameters of the SFH154, including voltage rating, current capacity, and power dissipation.

Q: What are the key electrical differences between these devices?

A: The IXTQ50N20P provides higher voltage capability (200V vs. 150V), greater continuous current (50A vs. 34A), and superior power handling (360W vs. 204W). Gate charge is lower (70nC vs. 110nC), enabling faster switching. On-state resistance is lower (60mOhm vs. 75mOhm), reducing conduction losses.

Q: Are there thermal considerations when substituting?

A: The IXTQ50N20P has a higher maximum power dissipation rating (360W vs. 204W) and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). Existing thermal management solutions designed for the SFH154 remain adequate for the IXTQ50N20P.

Q: Does the IXTQ50N20P meet current compliance standards?

A: Yes. The IXTQ50N20P is RoHS3 Compliant and carries REACH Unaffected status. The SFH154 is REACH Unaffected but not RoHS3 Compliant due to its obsolete status.

Q: What is the availability status of each device?

A: The SFH154 is obsolete with 680 pieces in stock. The IXTQ50N20P is active with 5330 pieces in stock, ensuring long-term supply continuity.

Q: Are gate drive circuits compatible between these devices?

A: Yes. Both devices operate with 10V gate drive voltage and have compatible gate threshold voltage specifications (4V and 5V respectively at 250µA). Existing gate drive circuits require no modification.

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