SFAF808G Equivalent & Substitute Parts

Part Overview

The SFAF808G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 8 A average rectified current. This through-hole component features fast recovery characteristics with a 35 ns reverse recovery time and is packaged in the ITO-220AC configuration. The device is actively produced and ROHS3 compliant, making it suitable for industrial and commercial power conversion applications. Equivalent and substitute parts are identified to provide design flexibility, support supply chain continuity, and accommodate application-specific performance requirements.

Substiute Parts

SFAF808G

Taiwan Semiconductor CorporationIn Stock: 19779SFAF808G Datasheet

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BYC20X-600PQ

WeEn SemiconductorsIn Stock: 13216BYC20X-600PQ Datasheet

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SDURF860

SMC Diode SolutionsIn Stock: 1729SDURF860 Datasheet

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VS-ETL1506FP-M3

Vishay General Semiconductor - Diodes DivisionIn Stock: 1631VS-ETL1506FP-M3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the SFAF808G is determined by the following critical parameters: voltage rating (600 V DC reverse), current capacity (8 A minimum), package type (through-hole TO-220 configuration), and compliance certifications (ROHS3). Substitute parts must maintain or exceed the reverse voltage specification and support the required current rating within the same thermal and mechanical envelope. Fast recovery characteristics (≤500 ns for currents >200 mA) are preserved across all identified substitutes. The three substitute parts listed—SDURF860, BYC20X-600PQ, and VS-ETL1506FP-M3—meet these core substitution criteria while offering variations in current capacity, forward voltage characteristics, and reverse recovery time that may be advantageous in specific circuit applications.

Parameter Comparison

Engineering Selection Recommendations

All identified substitute parts maintain ROHS3 compliance and active product status, ensuring regulatory alignment and long-term availability. The SDURF860 provides a direct functional equivalent with identical forward voltage characteristics (1.7 V @ 8 A) and matching operating temperature range (-55 to 150 °C), differing only in reverse recovery time (50 ns versus 35 ns) and reverse leakage current (5 µA versus 10 µA). The BYC20X-600PQ supports higher current capacity (20 A) with an extended maximum junction temperature (175 °C), suitable for applications requiring thermal margin or higher current throughput. The VS-ETL1506FP-M3 offers intermediate current rating (15 A) with superior forward voltage performance (1.07 V @ 15 A) and extended temperature range (-65 to 175 °C), though reverse recovery time is significantly longer (210 ns). Selection depends on circuit requirements for current capacity, thermal performance, and switching speed characteristics.

Frequently Asked Questions (FAQ)

Q: Can the SFAF808G be directly replaced with the SDURF860?

A: Yes. Both devices share identical voltage rating (600 V), forward voltage characteristics (1.7 V @ 8 A), operating temperature range (-55 to 150 °C), and package configuration (TO-220-2 Full Pack, ITO-220AC). The SDURF860 exhibits slightly longer reverse recovery time (50 ns versus 35 ns) and lower reverse leakage current (5 µA versus 10 µA), which are acceptable variations for general-purpose rectification applications.

Q: What is the primary difference between the SFAF808G and BYC20X-600PQ?

A: The BYC20X-600PQ is rated for 20 A average rectified current compared to the SFAF808G's 8 A rating. Both maintain 600 V reverse voltage and fast recovery characteristics. The BYC20X-600PQ features higher forward voltage (2.5 V @ 20 A) and extended maximum junction temperature (175 °C). This substitute is appropriate for applications requiring higher current capacity or enhanced thermal performance.

Q: Is the VS-ETL1506FP-M3 suitable as a substitute for the SFAF808G?

A: The VS-ETL1506FP-M3 meets the core substitution criteria of 600 V reverse voltage and through-hole TO-220-2 packaging. It provides 15 A current capacity and superior forward voltage performance (1.07 V @ 15 A). However, reverse recovery time is significantly longer (210 ns versus 35 ns), which may impact switching frequency performance in high-speed applications. Selection depends on circuit switching requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The SFAF808G and all three substitute parts (SDURF860, BYC20X-600PQ, VS-ETL1506FP-M3) are ROHS3 compliant and actively produced, ensuring regulatory compliance and supply chain continuity.

Q: What is the significance of the isolated tab feature in the BYC20X-600PQ and SDURF860 packages?

A: The isolated tab configuration provides electrical isolation between the tab and the semiconductor junction, enabling direct mounting to heat sinks without additional insulation. The SFAF808G and VS-ETL1506FP-M3 use standard TO-220-2 Full Pack configuration. Mechanical compatibility with existing heat sink designs must be verified during substitution.

Q: How do reverse recovery time differences affect circuit performance?

A: Reverse recovery time (trr) determines the duration of reverse current flow when the diode transitions from forward to reverse bias. The SFAF808G (35 ns) and BYC20X-600PQ (35 ns) exhibit faster recovery than the SDURF860 (50 ns) and VS-ETL1506FP-M3 (210 ns). Faster recovery reduces switching losses and electromagnetic interference, making it preferable in high-frequency applications. Slower recovery may be acceptable in lower-frequency power conversion circuits.

Q: Can the SFAF808G be substituted with a higher-current-rated device in the same package?

A: Yes, provided the application circuit can accommodate the different electrical characteristics. The BYC20X-600PQ (20 A) and VS-ETL1506FP-M3 (15 A) both support higher current than the SFAF808G (8 A). However, forward voltage and reverse recovery time differences must be evaluated for impact on circuit efficiency and thermal management. Higher-current devices typically exhibit different forward voltage characteristics that may affect voltage regulation performance.