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SFAF804G Equivalent & Substitute Parts
Part Overview
The SFAF804G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 8 A average rectified current. The device features fast recovery characteristics with a reverse recovery time of 35 nanoseconds and is housed in a TO-220-2 through-hole package. This part is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production needs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) | 8 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A | mV |
| Reverse Recovery Time (trr) | 35 | ns |
| Current - Reverse Leakage @ Vr | 10 | µA @ 200 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-2 Full Pack | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the SFAF804G is determined by the following critical parameters:
Mandatory Matching Parameters:
- Voltage - DC Reverse (Vr) (Max): 200 V
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
- RoHS Status: ROHS3 Compliant
Allowable Variation Parameters:
- Current - Average Rectified (Io): Equal or greater than 8 A
- Voltage - Forward (Vf) (Max) @ If: Equal or lower than 950 mV @ 8 A
- Reverse Recovery Time (trr): Equal or lower than 35 ns
- Current - Reverse Leakage @ Vr: Equal or lower than 10 µA @ 200 V
- Operating Temperature - Junction (Max): Equal or greater than 150°C
Substitute parts are classified into two categories: parametric equivalents (matching all critical parameters with identical ratings) and similar parts (matching voltage and package specifications with allowable variations in current capacity or forward voltage characteristics).
Parameter Comparison
| Parameter | SFAF804G | SFAF804GHC0G | SDURF820 | STTH1502FP |
|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | SMC Diode Solutions | STMicroelectronics |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 8 A | 8 A | Not specified | 15 A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A | 950 mV @ 8 A | 1.2 V @ 8 A | 1.1 V @ 15 A |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 35 ns | 36 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 Full Pack | TO-220-2 Full Pack | TO-220-2 Full Pack, Isolated Tab | TO-220-2 Full Pack |
| Operating Temperature - Junction | -55 to 150°C | -55 to 150°C | -55 to 150°C | -55 to 175°C |
| Product Status | Discontinued at DiGi Electronics | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
SFAF804GHC0G (Parametric Equivalent)
The SFAF804GHC0G is a parametric equivalent to the SFAF804G, manufactured by Taiwan Semiconductor Corporation. This part maintains identical electrical specifications including 200 V reverse voltage, 8 A average rectified current, 950 mV forward voltage at 8 A, and 35 ns reverse recovery time. The SFAF804GHC0G is currently in active product status with 946 units in stock. This part includes AEC-Q101 automotive qualification and is suitable for applications requiring automotive-grade reliability. Selection of this part requires no circuit redesign or thermal management modifications.
SDURF820 (Similar Substitute)
The SDURF820, manufactured by SMC Diode Solutions, is a similar substitute rated for 200 V reverse voltage with fast recovery characteristics and 35 ns reverse recovery time. The forward voltage specification is 1.2 V at 8 A, which is 250 mV higher than the SFAF804G. The package includes an isolated tab variant of the TO-220-2 configuration. This part is currently in active status with 1734 units in stock. The SDURF820 is suitable for applications where the higher forward voltage drop is acceptable within the circuit design margins. REACH status is affected for this part.
STTH1502FP (Similar Substitute)
The STTH1502FP, manufactured by STMicroelectronics, is a similar substitute rated for 200 V reverse voltage with 15 A average rectified current capacity. The reverse recovery time is 36 ns, which is 1 nanosecond longer than the SFAF804G. The forward voltage specification is 1.1 V at 15 A. The maximum operating junction temperature is 175°C, which is 25°C higher than the SFAF804G. This part is currently in active status with 1178 units in stock. The STTH1502FP is suitable for applications requiring higher current capacity or enhanced thermal performance. The increased current rating provides design margin for future load increases.
Frequently Asked Questions (FAQ)
Q: Can the SFAF804GHC0G be used as a direct replacement for the SFAF804G?
A: Yes. The SFAF804GHC0G is a parametric equivalent with identical electrical specifications. No circuit modifications are required. The primary difference is product status (active versus discontinued) and the addition of AEC-Q101 automotive qualification.
Q: What is the impact of using the SDURF820 with its higher forward voltage?
A: The SDURF820 has a forward voltage of 1.2 V at 8 A compared to 950 mV for the SFAF804G. This 250 mV difference increases power dissipation in the diode. Verify that the circuit design accommodates this additional voltage drop and the resulting thermal load on the device and PCB.
Q: Is the STTH1502FP suitable for 8 A applications?
A: Yes. The STTH1502FP is rated for 15 A average rectified current, which exceeds the 8 A requirement of the SFAF804G. The device operates within specification at 8 A with additional current margin. The higher current rating does not negatively impact performance at lower current levels.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. The SFAF804GHC0G, SDURF820, and STTH1502FP are all ROHS3 compliant. The SDURF820 has affected REACH status, while the SFAF804GHC0G and STTH1502FP have unaffected REACH status.
Q: What is the difference between the TO-220-2 Full Pack and TO-220-2 Full Pack with Isolated Tab?
A: The SDURF820 features an isolated tab variant, which provides electrical isolation between the tab and the semiconductor junction. Standard TO-220-2 packages (SFAF804G, SFAF804GHC0G, STTH1502FP) have the tab connected to the cathode. Verify PCB layout and thermal management requirements to determine if isolation is necessary for your application.
Q: Can I use the STTH1502FP in a circuit designed for 8 A operation?
A: Yes. The STTH1502FP is rated for 15 A and operates within specification at 8 A. The higher current rating provides design margin. However, verify that the forward voltage specification of 1.1 V at 15 A is acceptable for your circuit. At 8 A operation, the actual forward voltage may differ from the specified value at 15 A.
Q: What is the reverse recovery time difference between the SFAF804G and STTH1502FP?
A: The SFAF804G has a reverse recovery time of 35 ns, while the STTH1502FP has 36 ns. This 1 nanosecond difference is negligible for most applications and does not impact switching performance or EMI characteristics in typical rectifier circuits.
Q: Are there inventory considerations for selecting a substitute?
A: Yes. The SFAF804GHC0G has 946 units in stock, the SDURF820 has 1734 units, and the STTH1502FP has 1178 units. The SFAF804G original part has 17656 units in stock but is discontinued at DiGi Electronics. For long-term production requirements, select from the active parts with confirmed inventory availability.
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