SF808GHC0G Equivalent & Substitute Parts

Part Overview

The SF808GHC0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 8 A average rectified current. The device is packaged in a TO-220AB through-hole configuration and is classified as an active product with automotive-grade qualification (AEC-Q101). This diode is suitable for power supply circuits, converter applications, and general rectification tasks requiring fast recovery characteristics.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining electrical and mechanical compatibility within specified parameter ranges.

Substiute Parts

SF808GHC0G
Taiwan Semiconductor CorporationIn Stock: 1191SF808GHC0G Datasheet
SF808GHC0G
Current Part
SF808G
Taiwan Semiconductor CorporationIn Stock: 3182SF808G Datasheet
SF808G
Parametric Equivalent
APT30DQ60KG
Microchip TechnologyIn Stock: 4323APT30DQ60KG Datasheet
APT30DQ60KG
Similar
STTH16L06CTY
STMicroelectronicsIn Stock: 3229STTH16L06CTY Datasheet
STTH16L06CTY
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 8 A
Voltage - Forward (Vf) (Max) @ If 1.7 @ 8 A V
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature - Junction -55 to 150 °C
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the SF808GHC0G are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Direct Substitution): Parts that maintain identical electrical specifications, voltage ratings, current ratings, and package configuration. These parts are interchangeable without circuit modification.

Similar Parts (Application-Dependent Substitution): Parts that share the same voltage rating and package family but differ in current capacity, diode configuration, or thermal characteristics. These parts require design review to confirm suitability for the specific application.

Key Parameters Determining Substitution:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 600 V
  • Mounting Type: Must be Through Hole
  • Package / Case: Must be compatible with TO-220 family
  • Current - Average Rectified (Io): Application-dependent; higher ratings provide design margin
  • Speed Classification: Fast Recovery characteristics preferred for switching applications
  • Compliance: RoHS3 and REACH status must be maintained

Parameter Comparison

Parameter SF808GHC0G SF808G APT30DQ60KG STTH16L06CTY
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Microchip Technology STMicroelectronics
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8 A 8 A 30 A 10 A (per Diode)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A 1.7 V @ 8 A 2.4 V @ 30 A 1.8 V @ 8 A
Reverse Recovery Time (trr) 35 ns 35 ns 30 ns 55 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 25 µA @ 600 V 8 µA @ 600 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA Fast Recovery ≤ 500ns, > 200mA
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-2 TO-220-3
Operating Temperature - Junction -55 to 150 °C -55 to 150 °C -55 to 175 °C -40 to 175 °C
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Diode Configuration Single Diode Single Diode Single Diode 1 Pair Common Cathode

Engineering Selection Recommendations

SF808G (Parametric Equivalent): The SF808G is a direct parametric equivalent to the SF808GHC0G, manufactured by the same supplier (Taiwan Semiconductor Corporation). Both devices share identical electrical specifications: 600 V reverse voltage, 8 A average rectified current, 1.7 V forward voltage at 8 A, and 35 ns reverse recovery time. The SF808G is packaged in Tube format versus the SF808GHC0G's standard packaging. Both maintain ROHS3 compliance and MSL-1 moisture sensitivity rating. This part is suitable for direct substitution in applications where the SF808GHC0G is specified.

APT30DQ60KG (Similar Part - Higher Current Rating): The APT30DQ60KG, manufactured by Microchip Technology, maintains the 600 V reverse voltage rating and fast recovery speed classification. However, this device is rated for 30 A average rectified current, compared to the 8 A rating of the SF808GHC0G. The forward voltage is 2.4 V at 30 A, and reverse recovery time is 30 ns. The package is TO-220-2 (two-pin) versus the TO-220-3 (three-pin) configuration of the main part. This part is suitable for applications requiring higher current capacity with the same voltage rating, provided the circuit topology accommodates the two-pin package configuration. The device maintains ROHS3 compliance and MSL-1 rating.

STTH16L06CTY (Similar Part - Diode Array Configuration): The STTH16L06CTY, manufactured by STMicroelectronics, is a diode array with 1 Pair Common Cathode configuration, rated for 600 V reverse voltage and 10 A per diode. This device carries automotive-grade qualification (AEC-Q101) and maintains ROHS3 compliance. The forward voltage is 1.8 V at 8 A, and reverse recovery time is 55 ns. The package is TO-220-3, matching the main part's pin configuration. This part is suitable for applications where a dual-diode array with common cathode configuration is acceptable, providing higher current capacity per diode (10 A) compared to the SF808GHC0G (8 A). The extended operating temperature range (-40 to 175 °C) provides additional thermal margin compared to the main part (-55 to 150 °C).

All substitute parts maintain active product status, ROHS3 compliance, and REACH unaffected status, ensuring regulatory alignment with the original SF808GHC0G specification.

Frequently Asked Questions (FAQ)

Q: Can SF808G be used as a direct replacement for SF808GHC0G? A: Yes. The SF808G is a parametric equivalent with identical electrical specifications (600 V, 8 A, 1.7 V forward voltage, 35 ns recovery time) and the same TO-220-3 package configuration. The primary difference is packaging format (Tube versus standard). Both are manufactured by Taiwan Semiconductor Corporation and maintain ROHS3 compliance.

Q: What is the difference between SF808GHC0G and APT30DQ60KG? A: The APT30DQ60KG has a higher current rating (30 A versus 8 A) and uses a TO-220-2 package (two-pin) instead of TO-220-3 (three-pin). Both maintain 600 V reverse voltage and fast recovery characteristics. The APT30DQ60KG is suitable for higher-current applications but requires verification that the two-pin package is compatible with the circuit design.

Q: Is STTH16L06CTY compatible with SF808GHC0G? A: The STTH16L06CTY shares the same 600 V voltage rating and TO-220-3 package configuration. However, it is a diode array with common cathode configuration (two diodes) rather than a single diode. Each diode is rated for 10 A, providing higher current capacity. This part is suitable only if the application circuit can accommodate a dual-diode array topology.

Q: Do all substitute parts meet automotive qualification requirements? A: SF808GHC0G and STTH16L06CTY both carry AEC-Q101 automotive qualification. SF808G does not list automotive qualification in the provided specifications. APT30DQ60KG does not list automotive qualification. If automotive-grade qualification is a design requirement, SF808GHC0G and STTH16L06CTY are the qualified options.

Q: What is the significance of the TO-220-2 versus TO-220-3 package difference? A: TO-220-3 is a three-pin package (typically Anode, Cathode, and a third pin for mounting or thermal connection), while TO-220-2 is a two-pin package (Anode and Cathode only). These are not mechanically interchangeable on the same PCB footprint. APT30DQ60KG (TO-220-2) requires a different PCB layout than SF808GHC0G (TO-220-3).

Q: Are all parts RoHS3 compliant? A: Yes. SF808GHC0G, SF808G, APT30DQ60KG, and STTH16L06CTY are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

Q: What is the reverse recovery time significance? A: Reverse recovery time (trr) indicates how quickly the diode transitions from conducting to blocking state. SF808GHC0G has 35 ns, SF808G has 35 ns, APT30DQ60KG has 30 ns, and STTH16L06CTY has 55 ns. Lower values indicate faster switching, which is beneficial in high-frequency switching applications. All parts meet the fast recovery classification (≤ 500 ns).

Q: Can I use a higher-current-rated diode in place of the SF808GHC0G? A: Yes, provided the voltage rating (600 V minimum) and package compatibility are maintained. Higher current ratings provide design margin and do not negatively impact circuit operation. APT30DQ60KG (30 A) and STTH16L06CTY (10 A per diode) are suitable for applications where higher current capacity is acceptable, subject to package configuration verification.

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