SF5407-TAP Equivalent & Substitute Parts

Part Overview

The SF5407-TAP is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component operates at 800 V DC reverse voltage with a 3 A average rectified current rating. The device features fast recovery characteristics with a reverse recovery time of 75 nanoseconds, making it suitable for applications requiring rapid switching performance in power conversion and rectification circuits.

The SF5407-TAP is classified as an Active product with ROHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching electrical specifications and mechanical compatibility within the general-purpose rectifier diode category.

Substiute Parts

SF5407-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 1029SF5407-TAP Datasheet
SF5407-TAP
Current Part
1N5407G
Taiwan Semiconductor CorporationIn Stock: 44961N5407G Datasheet
1N5407G
MFR Recommended
1N5407RLG
onsemiIn Stock: 12741N5407RLG Datasheet
1N5407RLG
MFR Recommended
EGP30K
Fairchild SemiconductorIn Stock: 5117EGP30K Datasheet
EGP30K
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) Maximum 800 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) Maximum @ If 1.7 V @ 3 A V
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type Through Hole
Package / Case SOD-64, Axial
Operating Temperature - Junction -55 to 175 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the SF5407-TAP are identified based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) Maximum: 800 V
  • Current - Average Rectified (Io): 3 A
  • Mounting Type: Through Hole
  • Category: General-Purpose Rectifier Diodes

Secondary Compatibility Factors:

  • Forward voltage characteristics
  • Recovery speed classification
  • Reverse leakage current
  • Operating temperature range
  • RoHS and regulatory compliance

Substitute parts must maintain the 800 V / 3 A electrical rating and through-hole mounting configuration. Package variations (SOD-64, DO-201AD, DO-201AA, DO-27, Axial) are acceptable provided mechanical fit and lead configuration are compatible with the application circuit board layout.

Parameter Comparison

Parameter SF5407-TAP (Main) 1N5407G 1N5407RLG EGP30K
Manufacturer Vishay General Semiconductor Taiwan Semiconductor Corporation onsemi Fairchild Semiconductor
Voltage - DC Reverse (Vr) Max 800 V 800 V 800 V 800 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A
Voltage - Forward (Vf) Max @ If 1.7 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.7 V @ 3 A
Speed Classification Fast Recovery ≤ 500ns Standard Recovery > 500ns Standard Recovery > 500ns Fast Recovery ≤ 500ns
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 800 V 10 µA @ 800 V 5 µA @ 800 V
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case SOD-64, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AD, Axial
Operating Temperature - Junction -55 to 175°C -55 to 150°C -65 to 150°C -65 to 150°C
Product Status Active Active Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The 1N5407G and EGP30K are both classified as Active products and represent the preferred substitutes for the SF5407-TAP. Both maintain full electrical equivalence at the 800 V / 3 A rating with ROHS3 compliance.

The 1N5407G, manufactured by Taiwan Semiconductor Corporation, provides a lower forward voltage drop (1 V @ 3 A versus 1.7 V @ 3 A) but operates with standard recovery speed characteristics. This substitute is suitable for applications where reduced forward voltage dissipation is beneficial and switching speed requirements do not mandate fast recovery performance.

The EGP30K, manufactured by Fairchild Semiconductor, maintains identical forward voltage and fast recovery characteristics to the SF5407-TAP (1.7 V @ 3 A, 75 ns reverse recovery time). This substitute provides the closest electrical performance match and is recommended for applications requiring fast recovery performance equivalent to the main part.

Secondary Substitute (Legacy Status):

The 1N5407RLG, manufactured by onsemi, is classified as Not For New Designs. This part maintains the 800 V / 3 A electrical rating and ROHS3 compliance but exhibits higher reverse leakage current (10 µA @ 800 V versus 5 µA @ 800 V) and standard recovery speed characteristics. This substitute is acceptable only for replacement or repair of existing equipment where the original part specification is already established.

Temperature Range Consideration:

The SF5407-TAP operates across a junction temperature range of -55°C to 175°C. All substitute parts operate within -55°C to 150°C or -65°C to 150°C ranges. Applications requiring operation above 150°C junction temperature require the SF5407-TAP or equivalent parts with extended upper temperature ratings.

Frequently Asked Questions (FAQ)

Q: Can the 1N5407G be used as a direct replacement for the SF5407-TAP?

A: The 1N5407G is electrically equivalent at the 800 V / 3 A rating and maintains through-hole mounting compatibility. The primary difference is recovery speed classification: 1N5407G operates with standard recovery (> 500ns) while SF5407-TAP features fast recovery (≤ 500ns, 75 ns trr). Substitution is valid for applications where switching speed is not a critical performance parameter. Forward voltage is lower (1 V versus 1.7 V @ 3 A), reducing power dissipation.

Q: What is the difference between the EGP30K and SF5407-TAP?

A: The EGP30K provides electrical equivalence to the SF5407-TAP with identical forward voltage (1.7 V @ 3 A) and reverse recovery time (75 ns). Both operate at 800 V / 3 A with fast recovery characteristics. The primary difference is package configuration: EGP30K uses DO-201AD while SF5407-TAP uses SOD-64. Both are through-hole axial packages and are mechanically compatible in most circuit board layouts. Operating temperature range differs slightly: EGP30K operates to -65°C minimum versus -55°C for SF5407-TAP.

Q: Why is the 1N5407RLG marked as Not For New Designs?

A: The 1N5407RLG is a legacy product from onsemi. While it maintains the 800 V / 3 A electrical rating and ROHS3 compliance, it exhibits higher reverse leakage current (10 µA versus 5 µA @ 800 V) and standard recovery speed characteristics. New designs should utilize the 1N5407G or EGP30K. The 1N5407RLG remains available for replacement of existing equipment where the original specification is already established.

Q: Are package differences between SOD-64 and DO-201AD significant for substitution?

A: Both SOD-64 and DO-201AD are through-hole axial packages with compatible lead configurations. Physical dimensions and lead spacing differ slightly. Substitution is valid provided the circuit board layout accommodates the package dimensions. Verify hole spacing and lead diameter compatibility with the application PCB before implementation. Both packages are standard through-hole formats suitable for manual or automated assembly.

Q: What is the impact of forward voltage differences between substitute parts?

A: Forward voltage differences directly affect power dissipation in the diode. The SF5407-TAP and EGP30K both specify 1.7 V @ 3 A, while the 1N5407G specifies 1 V @ 3 A. At 3 A continuous current, the 1N5407G dissipates 0.7 V less than the SF5407-TAP, reducing thermal load by approximately 2.1 watts. Applications with thermal constraints may benefit from the lower forward voltage of the 1N5407G. High-current or continuous-duty applications should verify thermal performance with the selected substitute.

Q: Can these diodes be used interchangeably in high-frequency switching applications?

A: Recovery speed classification determines suitability for high-frequency switching. The SF5407-TAP and EGP30K feature fast recovery (≤ 500ns, 75 ns trr) and are suitable for high-frequency applications. The 1N5407G operates with standard recovery (> 500ns) and is not recommended for high-frequency switching where fast recovery performance is required. Reverse recovery time directly impacts switching losses and electromagnetic interference in power conversion circuits.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts (1N5407G, 1N5407RLG, EGP30K) maintain ROHS3 compliance and REACH Unaffected status, matching the SF5407-TAP. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080. Regulatory compliance is equivalent across all options for applications requiring environmental and trade compliance verification.

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