SF5404-TAP Equivalent & Substitute Parts

Part Overview

The SF5404-TAP is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 400 V DC reverse voltage and 3 A average rectified current. This through-hole component features fast recovery characteristics with a reverse recovery time of 50 ns and is packaged in SOD-64 axial configuration. The part is currently Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design flexibility demands component sourcing from multiple suppliers. The SF5404-TAP can be substituted with functionally equivalent diodes that maintain the same electrical performance parameters while potentially offering different package configurations or recovery speed characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A	V
Reverse Recovery Time (trr)	50	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Mounting Type	Through Hole	—
Package / Case	SOD-64, Axial	—
Operating Temperature - Junction	-55°C ~ 175°C	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the SF5404-TAP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 400 V
Current - Average Rectified (Io): Must equal or exceed 3 A
Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.1 V @ 3 A for optimal performance
Current - Reverse Leakage @ Vr: Must not exceed 5 µA @ 400 V
Reverse Recovery Time (trr): Fast recovery (≤ 500 ns) preferred for equivalent performance

Mechanical Compatibility Criteria:

Mounting Type: Through Hole (required)
Package / Case: Axial configuration (SOD-64, DO-27, DO-201AD, or equivalent axial packages)
Operating Temperature Range: Must support -55°C minimum junction temperature

Compliance Requirements:

RoHS3 Compliant
REACH Unaffected status

The substitute parts listed below meet these criteria with variations in packaging format, recovery speed classification, and forward voltage characteristics. All substitutes maintain the core 400 V / 3 A electrical specification and through-hole axial mounting requirement.

Parameter Comparison

Parameter	SF5404-TAP (Vishay)	1N5404-G (Comchip)	1N5404G (onsemi)	1N5404RLG (onsemi)	EGP30G (onsemi)
Manufacturer	Vishay General Semiconductor	Comchip Technology	onsemi	onsemi	onsemi
Voltage - DC Reverse (Vr) (Max)	400 V	400 V	400 V	400 V	400 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 3 A	950 mV @ 3 A	1 V @ 3 A	1 V @ 3 A	1.25 V @ 3 A
Speed Classification	Fast Recovery ≤ 500ns	Standard Recovery > 500ns	Standard Recovery > 500ns	Standard Recovery > 500ns	Fast Recovery ≤ 500ns
Reverse Recovery Time (trr)	50 ns	—	—	—	50 ns
Current - Reverse Leakage @ Vr	5 µA @ 400 V	5 µA @ 400 V	10 µA @ 400 V	10 µA @ 400 V	5 µA @ 400 V
Package / Case	SOD-64, Axial	DO-201AD, Axial	DO-201AA, DO-27, Axial	DO-201AA, DO-27, Axial	DO-201AD, Axial
Packaging Format	Tape & Box (TB)	Cut Tape (CT)	Bulk	Cut Tape (CT)	Cut Tape (CT)
Operating Temperature - Junction	-55°C ~ 175°C	-65°C ~ 125°C	-65°C ~ 150°C	-65°C ~ 150°C	-65°C ~ 150°C
Product Status	Active	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute - 1N5404-G (Comchip Technology): The 1N5404-G is the manufacturer-recommended substitute for the SF5404-TAP. This part maintains identical electrical specifications (400 V, 3 A) with superior forward voltage performance (950 mV vs. 1.1 V @ 3 A), resulting in lower power dissipation. The part is Active in product status, ensuring long-term availability and continued manufacturing support. It is supplied in Cut Tape packaging and packaged in DO-201AD (DO-27) axial configuration. The operating temperature range of -65°C to 125°C covers the SF5404-TAP minimum requirement of -55°C. This substitute is suitable for new designs and production applications.

Secondary Substitute - EGP30G (onsemi): The EGP30G provides fast recovery characteristics (50 ns trr) matching the SF5404-TAP, with identical reverse leakage current (5 µA @ 400 V). Forward voltage is slightly elevated at 1.25 V @ 3 A. The part is packaged in DO-201AD axial configuration and supplied in Cut Tape format. Operating temperature range extends to -65°C to 150°C. However, this part carries "Not For New Designs" status, limiting its application to legacy system maintenance and replacement scenarios only.

Alternative Substitutes - 1N5404G and 1N5404RLG (onsemi): Both onsemi parts (1N5404G and 1N5404RLG) meet the core 400 V / 3 A specification with forward voltage of 1 V @ 3 A. These parts feature standard recovery characteristics (> 500 ns) and elevated reverse leakage current (10 µA @ 400 V) compared to the primary part. Both carry "Not For New Designs" status and are suitable only for replacement applications in existing systems. The 1N5404G is supplied in Bulk packaging, while 1N5404RLG is supplied in Cut Tape format.

Compliance and Regulatory Status: All substitute parts are ROHS3 Compliant and REACH Unaffected, maintaining full regulatory alignment with the SF5404-TAP. All parts share identical ECCN (EAR99) and HTSUS (8541.10.0080) classifications.

Frequently Asked Questions (FAQ)

Q: Can the 1N5404-G replace the SF5404-TAP in all applications?

A: Yes, the 1N5404-G is electrically and mechanically compatible with the SF5404-TAP. Both parts meet the 400 V / 3 A specification and feature through-hole axial mounting. The 1N5404-G offers improved forward voltage performance (950 mV vs. 1.1 V @ 3 A), resulting in lower power dissipation. The primary difference is packaging format (Cut Tape vs. Tape & Box) and package designation (DO-201AD vs. SOD-64), which do not affect electrical performance. The 1N5404-G is Active in product status, making it suitable for new designs.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery time (trr) of 500 ns or less, while standard recovery diodes exceed 500 ns. The SF5404-TAP features fast recovery (50 ns trr), enabling faster switching and reduced switching losses in high-frequency applications. The 1N5404-G, 1N5404G, and 1N5404RLG are classified as standard recovery diodes. The EGP30G matches the SF5404-TAP with fast recovery characteristics (50 ns trr). For applications requiring fast switching performance, the EGP30G or SF5404-TAP are preferred over standard recovery alternatives.

Q: Are there temperature range limitations when substituting parts?

A: The SF5404-TAP operates from -55°C to 175°C junction temperature. The 1N5404-G operates from -65°C to 125°C, which covers the SF5404-TAP minimum requirement but has a lower maximum temperature (125°C vs. 175°C). For applications requiring operation above 125°C, the 1N5404-G is not suitable. The onsemi parts (1N5404G, 1N5404RLG, EGP30G) operate to 150°C maximum, still below the SF5404-TAP specification. Applications requiring the full -55°C to 175°C range must use the SF5404-TAP or verify that substitute parts meet specific temperature requirements.

Q: What does "Not For New Designs" status mean?

A: "Not For New Designs" indicates that the manufacturer is not recommending the part for new product development. These parts may have limited production runs, reduced manufacturing support, or planned obsolescence. The onsemi parts (1N5404G, 1N5404RLG, EGP30G) carry this status. These parts are suitable for replacement in existing systems or legacy applications but should not be selected for new product designs. The 1N5404-G (Comchip) and SF5404-TAP (Vishay) are both Active in product status and are appropriate for new designs.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction. The SF5404-TAP specifies 1.1 V @ 3 A, while the 1N5404-G specifies 950 mV @ 3 A. The 250 mV difference results in lower power dissipation with the 1N5404-G (P = Vf × I = 950 mV × 3 A = 2.85 W vs. 3.3 W). In rectifier circuits, lower forward voltage reduces heat generation and improves efficiency. The EGP30G at 1.25 V @ 3 A produces slightly higher power dissipation (3.75 W). For thermal-sensitive applications, the 1N5404-G is preferred.

Q: What packaging format differences exist between substitutes?

A: The SF5404-TAP is supplied in Tape & Box (TB) format, suitable for automated assembly with tape-and-reel handling. The 1N5404-G and EGP30G are supplied in Cut Tape (CT) format, also compatible with automated pick-and-place equipment. The 1N5404G is supplied in Bulk format, requiring manual handling and sorting. All parts feature through-hole axial mounting with compatible lead spacing. Package designations (SOD-64, DO-27, DO-201AD) refer to the physical case style but do not affect electrical performance or mounting compatibility in through-hole applications.

Q: Can reverse leakage current differences impact circuit operation?

A: Reverse leakage current (Ir) is the small current flowing through the diode in reverse bias condition. The SF5404-TAP and 1N5404-G specify 5 µA @ 400 V, while the onsemi parts (1N5404G, 1N5404RLG) specify 10 µA @ 400 V. In most rectifier applications, this difference is negligible. However, in high-impedance circuits or precision analog applications, the lower leakage current (5 µA) of the SF5404-TAP and 1N5404-G may be preferred. The EGP30G also specifies 5 µA @ 400 V, matching the primary part.

Q: Is the SF5404-TAP suitable for high-frequency switching applications?

A: The SF5404-TAP features fast recovery characteristics (50 ns trr), making it suitable for high-frequency switching applications up to several hundred kilohertz. The standard recovery substitutes (1N5404-G, 1N5404G, 1N5404RLG) with recovery times exceeding 500 ns are not recommended for high-frequency switching due to increased switching losses and potential reverse recovery current spikes. The EGP30G, with 50 ns trr matching the SF5404-TAP, is the only substitute suitable for high-frequency applications.

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