SF5402-TAP Equivalent & Substitute Parts

Part Overview

The SF5402-TAP is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component is rated for 200 V DC reverse voltage with 3 A average rectified current and features fast recovery characteristics with a 50 ns reverse recovery time. The part is classified as Active and RoHS3 compliant.

Substitute parts become necessary when the SF5402-TAP reaches end-of-life status, inventory constraints occur, or alternative packaging formats are required for manufacturing optimization. The parts listed below maintain electrical equivalence within the specified parameter ranges while offering different packaging configurations and availability profiles.

Substiute Parts

SF5402-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 1020SF5402-TAP Datasheet
SF5402-TAP
Current Part
1N5402G
Taiwan Semiconductor CorporationIn Stock: 21461N5402G Datasheet
1N5402G
MFR Recommended
1N5402RLG
onsemiIn Stock: 37191N5402RLG Datasheet
1N5402RLG
MFR Recommended
EGP30D
onsemiIn Stock: 25502EGP30D Datasheet
EGP30D
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Mounting Type Through Hole -
Operating Temperature - Junction -55°C ~ 175°C °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution eligibility for the SF5402-TAP is determined by the following critical parameters:

Electrical Equivalence Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Voltage - Forward (Vf) (Max) @ If: Within acceptable operating range
  • Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole (required)
  • Package / Case: Axial configuration (SOD-64, DO-201AD, DO-201AA, DO-27)

Compliance Criteria:

  • RoHS Status: ROHS3 Compliant (required)
  • REACH Status: REACH Unaffected (required)

The three substitute parts listed below meet all electrical and mechanical requirements. Variations in recovery speed classification (Fast Recovery vs. Standard Recovery) and operating temperature ranges are noted but do not preclude substitution when the application requirements are satisfied by the substitute part's specifications.

Parameter Comparison

Parameter SF5402-TAP (Main) 1N5402G 1N5402RLG EGP30D
Manufacturer Vishay General Semiconductor Taiwan Semiconductor Corporation onsemi onsemi
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) 3 A 3 A 3 A 3 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 950 mV @ 3 A
Speed Classification Fast Recovery ≤ 500ns Standard Recovery >500ns Standard Recovery >500ns Fast Recovery ≤ 500ns
Reverse Recovery Time (trr) 50 ns - - 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 200 V 5 µA @ 200 V
Package / Case SOD-64, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AD, Axial
Packaging Format Tape & Box (TB) Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Product Status Active Active Not For New Designs Not For New Designs
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Inventory (Pcs) 932 2110 3659 25400

Engineering Selection Recommendations

1N5402G (Taiwan Semiconductor Corporation)

The 1N5402G is an Active product status component suitable for new designs. It meets all electrical requirements with 200 V reverse voltage and 3 A average rectified current. Forward voltage is 1 V @ 3 A, which is lower than the main part. The component operates at Standard Recovery speed classification (>500ns) rather than Fast Recovery. Operating temperature range is -55°C ~ 150°C, which is 25°C lower than the SF5402-TAP at the upper limit. Packaging is DO-201AD in Tape & Reel format with 2110 units in stock. This part is suitable for applications where the lower maximum junction temperature and standard recovery speed are acceptable.

1N5402RLG (onsemi)

The 1N5402RLG carries a "Not For New Designs" product status designation. It meets electrical requirements with 200 V reverse voltage and 3 A average rectified current. Forward voltage is 1 V @ 3 A. Reverse leakage current is 10 µA @ 200 V, which is higher than the main part specification of 5 µA. Operating temperature range is -65°C ~ 150°C. Packaging is DO-201AA/DO-27 Axial in Cut Tape format with 3659 units in stock. This part is restricted to legacy design support and existing production lines only.

EGP30D (onsemi)

The EGP30D carries a "Not For New Designs" product status designation. It meets all electrical requirements with 200 V reverse voltage and 3 A average rectified current. Forward voltage is 950 mV @ 3 A, the lowest among all listed parts. The component features Fast Recovery characteristics with 50 ns reverse recovery time, matching the main part. Operating temperature range is -65°C ~ 150°C. Packaging is DO-201AD Axial in Cut Tape format with the highest inventory availability at 25400 units. This part is restricted to legacy design support and existing production lines only.

Frequently Asked Questions (FAQ)

Q: Can I use 1N5402G as a direct replacement for SF5402-TAP in new designs?

A: Yes. The 1N5402G meets all critical electrical parameters: 200 V reverse voltage, 3 A average rectified current, and RoHS3 compliance. It is classified as Active product status, making it suitable for new designs. The primary differences are packaging format (DO-201AD vs. SOD-64) and recovery speed classification (Standard vs. Fast). Verify that your PCB layout accommodates the DO-201AD package dimensions and that Standard Recovery speed meets application requirements.

Q: What is the difference between Fast Recovery and Standard Recovery speed classifications?

A: Fast Recovery diodes have reverse recovery time ≤ 500 ns and are specified for currents > 200 mA. Standard Recovery diodes have reverse recovery time > 500 ns. The SF5402-TAP and EGP30D are Fast Recovery devices with 50 ns trr. The 1N5402G and 1N5402RLG are Standard Recovery devices. Fast Recovery diodes are preferred in high-frequency switching applications to minimize switching losses. Standard Recovery diodes are suitable for lower-frequency rectification applications.

Q: Why do some substitute parts have "Not For New Designs" status?

A: The 1N5402RLG and EGP30D are designated "Not For New Designs" by their manufacturers. These parts are available for legacy production support and existing designs only. For new product development, use the SF5402-TAP (Active status) or 1N5402G (Active status).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts—1N5402G, 1N5402RLG, and EGP30D—are RoHS3 compliant and REACH unaffected, matching the compliance profile of the SF5402-TAP.

Q: What is the difference between SOD-64 and DO-201AD packages?

A: Both are through-hole axial packages for rectifier diodes. SOD-64 is the package designation for the SF5402-TAP. DO-201AD is the package designation for 1N5402G and EGP30D. Both packages use axial lead configuration suitable for through-hole PCB assembly. Physical dimensions differ; verify PCB footprint compatibility before substitution.

Q: Can I substitute EGP30D for SF5402-TAP in production?

A: EGP30D meets all electrical requirements and has the highest inventory availability (25400 units). However, it carries "Not For New Designs" status, restricting its use to legacy production support. For ongoing production, use 1N5402G (Active status) or maintain SF5402-TAP supply.

Q: What does the reverse leakage current specification mean?

A: Reverse leakage current is the small current that flows through the diode when reverse-biased at maximum rated voltage. SF5402-TAP and 1N5402G specify 5 µA @ 200 V. The 1N5402RLG specifies 10 µA @ 200 V. Lower leakage current indicates better reverse blocking performance. For most applications, both values are acceptable; high-impedance circuits may require the lower leakage specification.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage drop varies slightly among substitutes: SF5402-TAP (1.1 V), 1N5402G (1 V), 1N5402RLG (1 V), and EGP30D (950 mV). These differences affect power dissipation and voltage regulation in rectifier circuits. In low-voltage applications, the 100 mV difference between SF5402-TAP and EGP30D may be significant. In high-voltage applications, the difference is negligible. Recalculate thermal performance and output voltage regulation when substituting.

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