SF36GHA0G Equivalent & Substitute Parts

Part Overview

The SF36GHA0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	400	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.3	V @ 3 A
Reverse Recovery Time (trr)	35	ns
Current - Reverse Leakage @ Vr	5	µA @ 400 V
Package / Case	DO-201AD, Axial	—
Mounting Type	Through Hole	—
Operating Temperature - Junction	-55 to 150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the SF36GHA0G is determined by the following critical parameters:

Mandatory Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3 A
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
RoHS Status: ROHS3 Compliant

Allowable Parameter Variance:

Voltage - Forward (Vf) (Max) @ If: 1.2 V to 1.5 V @ 3 A
Reverse Recovery Time (trr): 35 ns to 50 ns
Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 400 V
Operating Temperature - Junction (Max): 150°C or higher

Substitute parts are grouped as parametric equivalents or similar alternatives based on adherence to these criteria. All identified substitutes maintain the same voltage and current ratings, package configuration, and through-hole mounting specification.

Parameter Comparison

Parameter	SF36GHA0G (Main)	HER305G A0G	1N5404-E3/54	1N5404-E3/73	STTH3R04RL
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	STMicroelectronics
Voltage - DC Reverse (Vr) (Max)	400 V	400 V	400 V	400 V	400 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 3 A	1.3 V @ 3 A	1.2 V @ 3 A	1.2 V @ 3 A	1.5 V @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	35 ns	50 ns	—	—	35 ns
Current - Reverse Leakage @ Vr	5 µA @ 400 V	10 µA @ 400 V	5 µA @ 400 V	5 µA @ 400 V	5 µA @ 400 V
Capacitance @ Vr, F	60pF @ 4V, 1MHz	60pF @ 4V, 1MHz	30pF @ 4V, 1MHz	30pF @ 4V, 1MHz	—
Package / Case	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AD, Axial
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature - Junction	-55 to 150°C	-55 to 150°C	-50 to 150°C	-50 to 150°C	Max 175°C
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

HER305G A0G (Taiwan Semiconductor Corporation): This part is a parametric equivalent to the SF36GHA0G, sharing identical voltage and current ratings, forward voltage characteristics, and operating temperature range. Both components are manufactured by Taiwan Semiconductor Corporation and carry ROHS3 compliance. The HER305G A0G exhibits a reverse recovery time of 50 ns compared to 35 ns in the main part, and reverse leakage current of 10 µA versus 5 µA. This substitute is suitable for applications where the slightly extended recovery time and increased leakage current remain within system tolerance margins.

1N5404-E3/73 (Vishay General Semiconductor - Diodes Division): This part maintains the 400 V / 3 A rating and DO-201AD package configuration. The 1N5404-E3/73 operates with standard recovery characteristics (>500ns) and exhibits lower forward voltage (1.2 V @ 3 A) and reduced capacitance (30pF) compared to the main part. This substitute is applicable in circuits where standard recovery speed is acceptable and lower forward voltage drop is beneficial. The part carries ROHS3 compliance and unlimited moisture sensitivity level.

1N5404-E3/54 (Vishay General Semiconductor - Diodes Division): This variant shares the same electrical and package specifications as the 1N5404-E3/73, with identical voltage ratings, current capacity, and standard recovery characteristics. The primary distinction is packaging format. This substitute operates within the same parameter envelope and is suitable for equivalent applications.

STTH3R04RL (STMicroelectronics): This part matches the 400 V / 3 A specifications and DO-201AD package. The STTH3R04RL features fast recovery characteristics (≤ 500ns) with 35 ns reverse recovery time, matching the main part's recovery performance. Forward voltage is specified at 1.5 V @ 3 A, representing the upper tolerance limit. Operating temperature maximum is 175°C, exceeding the main part's 150°C specification. This substitute is suitable for applications requiring fast recovery performance and extended temperature operation.

All substitute parts maintain Active product status and ROHS3 compliance, ensuring regulatory and supply chain compatibility with the SF36GHA0G.

Frequently Asked Questions (FAQ)

Q: What are the critical parameters that determine if a diode can substitute for the SF36GHA0G?

A: The mandatory parameters are voltage rating (400 V DC reverse), current rating (3 A average rectified), package type (DO-201AD axial), and mounting method (through-hole). All substitute parts must match these specifications exactly. Secondary parameters including forward voltage, reverse recovery time, and leakage current may vary within defined tolerances.

Q: Can the 1N5404-E3/73 replace the SF36GHA0G in all applications?

A: The 1N5404-E3/73 is electrically compatible for applications where standard recovery speed (>500ns) is acceptable. The main difference is recovery time: the SF36GHA0G features fast recovery (≤ 500ns, 35 ns trr), while the 1N5404-E3/73 operates with standard recovery characteristics. Forward voltage is lower (1.2 V versus 1.3 V), which may reduce power dissipation. Verify that your circuit design does not require fast recovery performance before substitution.

Q: What is the difference between the HER305G A0G and SF36GHA0G?

A: Both parts are 400 V / 3 A rectifier diodes in DO-201AD packages manufactured by Taiwan Semiconductor Corporation. The HER305G A0G exhibits a reverse recovery time of 50 ns compared to 35 ns in the SF36GHA0G, and reverse leakage current of 10 µA versus 5 µA. These differences are within acceptable tolerances for most general-purpose rectification applications.

Q: Does the STTH3R04RL have any advantages over the SF36GHA0G?

A: The STTH3R04RL matches the SF36GHA0G in reverse recovery time (35 ns) and fast recovery characteristics. The STTH3R04RL operates at a maximum junction temperature of 175°C, compared to 150°C for the SF36GHA0G, providing extended thermal headroom in high-temperature environments. Forward voltage is specified at 1.5 V @ 3 A, which is higher than the main part's 1.3 V specification.

Q: Are all substitute parts RoHS compliant?

A: Yes. All identified substitute parts—HER305G A0G, 1N5404-E3/54, 1N5404-E3/73, and STTH3R04RL—carry ROHS3 compliance status, matching the SF36GHA0G's regulatory classification.

Q: What is the significance of reverse recovery time in selecting a substitute?

A: Reverse recovery time (trr) determines how quickly the diode transitions from forward conduction to reverse blocking. The SF36GHA0G specifies 35 ns fast recovery. Substitutes with longer recovery times (such as the 1N5404 series at >500ns) may introduce switching delays in high-frequency applications. Fast recovery substitutes (HER305G A0G at 50 ns, STTH3R04RL at 35 ns) maintain similar switching characteristics.

Q: Can I use the 1N5404-E3/54 and 1N5404-E3/73 interchangeably?

A: Yes. Both parts share identical electrical specifications (400 V, 3 A, 1.2 V forward voltage, standard recovery, 5 µA leakage) and DO-201AD package configuration. The primary difference is packaging format (cut tape). They are functionally interchangeable for circuit design purposes.

Q: What is the operating temperature range for each substitute?

A: SF36GHA0G and HER305G A0G: -55°C to 150°C. 1N5404-E3/54 and 1N5404-E3/73: -50°C to 150°C. STTH3R04RL: maximum 175°C (minimum temperature not specified in provided data). Verify that your application's temperature requirements fall within the selected substitute's operating range.

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