SF35-TP Equivalent & Substitute Parts

Part Overview

The SF35-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 300 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The SF35-TP operates across a junction temperature range of -55°C to 125°C and meets ROHS3 compliance requirements.

Substiute Parts

SF35-TP
Micro Commercial CoIn Stock: 1028SF35-TP Datasheet
SF35-TP
Current Part
EGP30F
Fairchild SemiconductorIn Stock: 3665EGP30F Datasheet
EGP30F
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HER304GA-G
Comchip TechnologyIn Stock: 701HER304GA-G Datasheet
HER304GA-G
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HER304GT-G
Comchip TechnologyIn Stock: 958HER304GT-G Datasheet
HER304GT-G
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UF3004-G
Comchip TechnologyIn Stock: 1024UF3004-G Datasheet
UF3004-G
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UF3004-HF
Comchip TechnologyIn Stock: 991UF3004-HF Datasheet
UF3004-HF
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 300 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 300 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -55°C ~ 125°C
Technology Standard

Substitute Part Grouping Explanation

Substitution of the SF35-TP is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): 300 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V maximum

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or DO-27 axial configurations

All identified substitute parts meet or exceed these electrical parameters and maintain through-hole axial mounting compatibility. Substitute parts are grouped by package variant (DO-201AD versus DO-27) and product status (active versus obsolete).

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If trr (ns) Ir @ Vr Package Product Status
SF35-TP Micro Commercial Co 300 V 3 A 1.3 V @ 3 A 35 5 µA @ 300 V DO-201AD Obsolete
EGP30F Fairchild Semiconductor 300 V 3 A 1.25 V @ 3 A 50 5 µA @ 300 V DO-201AD Active
HER304GA-G Comchip Technology 300 V 3 A 1 V @ 3 A 50 5 µA @ 300 V DO-27 Active
HER304GT-G Comchip Technology 300 V 3 A 1 V @ 3 A 50 5 µA @ 300 V DO-27 Active
UF3004-G Comchip Technology 300 V 3 A 1.3 V @ 3 A 50 5 µA @ 300 V DO-27 Active
UF3004-HF Comchip Technology 300 V 3 A 1.3 V @ 3 A 50 5 µA @ 300 V DO-27 Active

Engineering Selection Recommendations

Package Compatibility Consideration:

The SF35-TP uses a DO-201AD package. The EGP30F from Fairchild Semiconductor is the direct package equivalent, also specified in DO-201AD axial configuration. This part is active and maintains identical electrical ratings for voltage, current, and reverse leakage specifications. The EGP30F exhibits a lower forward voltage (1.25 V versus 1.3 V) and slightly longer reverse recovery time (50 ns versus 35 ns), both within acceptable substitution parameters.

Alternative Package Options:

The HER304GA-G, HER304GT-G, UF3004-G, and UF3004-HF parts use DO-27 axial packages. These parts are electrically compatible with the SF35-TP but require mechanical board layout verification due to package dimensional differences between DO-201AD and DO-27 configurations. All four parts are active products from Comchip Technology.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) ratings. All parts are classified as active products except the original SF35-TP, ensuring long-term procurement availability. Inventory levels for substitute parts range from 645 to 3602 units, supporting production requirements.

Frequently Asked Questions (FAQ)

Q: Can the EGP30F directly replace the SF35-TP without board modifications?

A: Yes. The EGP30F is specified in the same DO-201AD axial package as the SF35-TP. Both parts share identical voltage (300 V), current (3 A), and reverse leakage (5 µA @ 300 V) ratings. The EGP30F is an active product, addressing the obsolescence of the SF35-TP.

Q: What is the difference between DO-201AD and DO-27 packages?

A: Both are axial through-hole packages for rectifier diodes. DO-201AD and DO-27 differ in physical dimensions and lead spacing. Substitution between these packages requires verification of board layout and lead hole spacing compatibility.

Q: Are the HER304GA-G and HER304GT-G electrically identical?

A: Yes. Both parts are manufactured by Comchip Technology with identical electrical specifications (300 V, 3 A, 1 V forward voltage, 50 ns reverse recovery time). The difference is packaging: HER304GA-G is supplied in Tape & Box format, while HER304GT-G is supplied in Tape & Reel format.

Q: How do UF3004-G and UF3004-HF differ?

A: Both parts share identical electrical specifications and are manufactured by Comchip Technology. The "-HF" suffix indicates a packaging or handling variant. Both are supplied in bulk packaging and maintain the same DO-27 axial configuration.

Q: What is the significance of the reverse recovery time (trr) difference between SF35-TP and substitutes?

A: The SF35-TP has a 35 ns reverse recovery time, while all substitute parts specify 50 ns. Both values fall within the fast recovery classification (≤ 500ns). The longer recovery time in substitutes has negligible impact on general-purpose rectification applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The EGP30F, HER304GA-G, HER304GT-G, UF3004-G, and UF3004-HF are all ROHS3 compliant. All parts maintain MSL 1 (unlimited) moisture sensitivity ratings.

Q: Which substitute part offers the lowest forward voltage?

A: The HER304GA-G and HER304GT-G both specify 1 V forward voltage at 3 A, compared to 1.3 V for the SF35-TP. This represents a 0.3 V reduction in forward voltage drop.

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