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SF30HG-T Equivalent & Substitute Parts
Part Overview
The SF30HG-T is a general-purpose rectifier diode manufactured by Diodes Incorporated, rated for 500 V DC reverse voltage and 3 A average rectified current in a DO-201AD through-hole axial package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.
The SF30HG-T operates across a junction temperature range of -65°C to 150°C and features fast recovery characteristics with a reverse recovery time of 50 ns. It is RoHS3 compliant and REACH affected. Due to its obsolete status, active alternative parts with equivalent or superior electrical ratings are required for new designs and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 500 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 3 A | V |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Reverse Recovery Time (trr) | 50 | ns |
| Current - Reverse Leakage @ Vr | 5 | µA @ 500 V |
| Mounting Type | Through Hole | — |
| Package / Case | DO-201AD, Axial | — |
| Operating Temperature - Junction | -65 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the SF30HG-T is determined by the following critical parameters:
Electrical Equivalence Criteria:
- Voltage - DC Reverse (Vr) (Max): Minimum 500 V
- Current - Average Rectified (Io): Minimum 3 A
- Voltage - Forward (Vf) (Max) @ If: Within acceptable operating range
- Speed Classification: Fast Recovery or Standard Recovery
- Reverse Recovery Time (trr): Acceptable for application switching frequency
Mechanical Compatibility Criteria:
- Mounting Type: Through Hole (primary requirement for form-fit-function)
- Package / Case: DO-201AD Axial or equivalent axial through-hole package
Compliance & Status Criteria:
- Product Status: Active preferred for long-term availability
- RoHS Status: ROHS3 Compliant preferred
- REACH Status: Consideration for supply chain requirements
Substitute parts are grouped into two categories:
Category 1 - Direct Package Match (DO-201AD Axial): Parts maintaining identical or functionally equivalent DO-201AD through-hole axial packaging with 500 V / 3 A ratings.
Category 2 - Alternative Package (Axial Through-Hole, Non-DO-201AD): Parts with equivalent electrical ratings in alternative through-hole axial packages (B, Axial).
Category 3 - Elevated Voltage Rating: Parts exceeding the 500 V minimum specification, providing additional design margin.
Category 4 - Surface Mount Alternative: Parts with equivalent electrical ratings in surface-mount packages for designs permitting package transition.
Parameter Comparison
| Parameter | SF30HG-T | 1N5405-E3/54 | 1N5189 | 1N5419E3 | 1N5419 | STTH3R06RL |
|---|---|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Vishay General Semiconductor | Microchip Technology | Microchip Technology | Microchip Technology | STMicroelectronics |
| Voltage - DC Reverse (Vr) (Max) | 500 V | 500 V | 500 V | 500 V | 500 V | 600 V |
| Current - Average Rectified (Io) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 3 A | 1.2 V @ 3 A | 1.5 V @ 9 A | 1.5 V @ 9 A | 1.5 V @ 9 A | 1.7 V @ 3 A |
| Speed | Fast Recovery ≤ 500ns | Standard Recovery >500ns | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns | Fast Recovery ≤ 500ns |
| Reverse Recovery Time (trr) | 50 ns | — | 300 ns | 250 ns | 250 ns | 35 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 500 V | 5 µA @ 500 V | 2 µA @ 500 V | 1 µA @ 500 V | 1 µA @ 500 V | 3 µA @ 600 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Surface Mount | Through Hole |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | B, Axial | B, Axial | SQ-MELF, B | DO-201AD, Axial |
| Operating Temperature - Junction | -65 to 150°C | -50 to 150°C | -65 to 175°C | -65 to 175°C | -65 to 175°C | Max 175°C |
| Product Status | Obsolete | Active | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | RoHS non-compliant | ROHS3 Compliant | RoHS non-compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitute: 1N5405-E3/54
The 1N5405-E3/54 manufactured by Vishay General Semiconductor is the optimal substitute for the SF30HG-T. This part maintains identical electrical ratings (500 V, 3 A), matches the DO-201AD through-hole axial package, and is active in production. It is RoHS3 compliant, ensuring regulatory alignment. The forward voltage of 1.2 V @ 3 A is superior to the SF30HG-T specification of 1.5 V @ 3 A, reducing power dissipation. Standard recovery speed (>500ns) differs from the SF30HG-T fast recovery characteristic; this distinction requires evaluation based on application switching frequency requirements.
Secondary Substitute: 1N5419E3
The 1N5419E3 manufactured by Microchip Technology provides equivalent electrical performance with active product status and RoHS3 compliance. This part maintains 500 V / 3 A ratings and fast recovery characteristics (250 ns trr). The B, Axial package differs from DO-201AD but remains a through-hole axial configuration suitable for PCB mounting. Operating temperature range extends to 175°C, exceeding the SF30HG-T specification. Reverse leakage current is reduced to 1 µA @ 500 V.
Tertiary Substitute: STTH3R06RL
The STTH3R06RL manufactured by STMicroelectronics offers elevated voltage rating (600 V) with maintained 3 A current capacity. This part is RoHS3 compliant and active in production. The DO-201AD through-hole axial package matches the SF30HG-T form factor. Fast recovery characteristics (35 ns trr) exceed the SF30HG-T specification. Forward voltage of 1.7 V @ 3 A is higher than the SF30HG-T; this parameter requires thermal analysis for applications with power dissipation constraints.
Alternative Substitute: 1N5189
The 1N5189 manufactured by Microchip Technology maintains 500 V / 3 A ratings with active product status. The B, Axial through-hole package differs from DO-201AD. Operating temperature range extends to 175°C. This part is RoHS non-compliant; regulatory requirements must be evaluated before selection. Reverse recovery time of 300 ns indicates slower switching compared to the SF30HG-T.
Not Recommended: 1N5419
The 1N5419 manufactured by Microchip Technology features a surface-mount SQ-MELF package, incompatible with through-hole PCB designs requiring the SF30HG-T form factor. This part is suitable only for designs permitting package transition to surface-mount technology.
Frequently Asked Questions (FAQ)
Q: Can the 1N5405-E3/54 directly replace the SF30HG-T in existing PCB designs?
A: The 1N5405-E3/54 maintains identical DO-201AD through-hole axial packaging and equivalent electrical ratings (500 V, 3 A), enabling direct PCB mounting without layout modification. However, the speed classification differs: the SF30HG-T is fast recovery (50 ns trr), while the 1N5405-E3/54 is standard recovery (>500ns trr). Applications requiring fast switching response must evaluate this parameter against circuit timing requirements.
Q: What is the difference between fast recovery and standard recovery diodes?
A: Fast recovery diodes exhibit reverse recovery times ≤ 500 ns, reducing switching losses in high-frequency applications. Standard recovery diodes have reverse recovery times > 500 ns, suitable for lower-frequency circuits. The SF30HG-T is fast recovery (50 ns), while the 1N5405-E3/54 is standard recovery. Selection depends on application switching frequency and acceptable power dissipation.
Q: Are all substitute parts RoHS3 compliant?
A: No. The 1N5189 and 1N5419 are RoHS non-compliant. The 1N5405-E3/54, 1N5419E3, and STTH3R06RL are RoHS3 compliant. Regulatory requirements and supply chain policies must determine compliance necessity for your application.
Q: Can the 1N5419 be used as a substitute?
A: The 1N5419 is not suitable for direct substitution. This part features a surface-mount SQ-MELF package, whereas the SF30HG-T requires through-hole mounting. Package transition is possible only in designs permitting PCB layout and assembly method changes.
Q: What is the advantage of the STTH3R06RL over the SF30HG-T?
A: The STTH3R06RL provides elevated voltage rating (600 V versus 500 V), offering additional design margin for overvoltage conditions. Reverse recovery time is superior (35 ns versus 50 ns), reducing switching losses. The DO-201AD package matches the SF30HG-T form factor. Forward voltage is higher (1.7 V @ 3 A versus 1.5 V @ 3 A), requiring thermal evaluation for power-dissipation-sensitive applications.
Q: Why does the 1N5189 have a different forward voltage specification?
A: The 1N5189 forward voltage is specified at 9 A (1.5 V @ 9 A), whereas the SF30HG-T is specified at 3 A (1.5 V @ 3 A). Forward voltage varies with current; higher current typically results in higher voltage drop. Direct comparison requires evaluation at the actual operating current of your application.
Q: Is the B, Axial package compatible with DO-201AD PCB footprints?
A: The B, Axial package is a through-hole axial configuration with different physical dimensions than DO-201AD. PCB footprint compatibility must be verified through mechanical drawings. In many applications, slight dimensional differences permit mounting with component lead bending; however, this approach is not recommended for production designs. New PCB layouts should accommodate the specific package dimensions.
Q: What is the operating temperature range difference between substitutes?
A: The SF30HG-T operates from -65°C to 150°C. The 1N5189, 1N5419E3, and 1N5419 extend to -65°C to 175°C, providing 25°C additional high-temperature margin. The STTH3R06RL specifies maximum 175°C. The 1N5405-E3/54 operates from -50°C to 150°C, with reduced low-temperature range. Application temperature requirements determine suitability.
Q: Which substitute offers the lowest reverse leakage current?
A: The 1N5419E3 and 1N5419 both specify 1 µA @ 500 V reverse leakage current, the lowest among all substitutes. The SF30HG-T specifies 5 µA @ 500 V. Lower reverse leakage reduces standby power consumption and improves high-impedance circuit performance.
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