SF12GHA0G Equivalent & Substitute Parts

Part Overview

The SF12GHA0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This component is classified as a fast recovery diode with a reverse recovery time of 35 nanoseconds, suitable for automotive applications and qualified to AEC-Q101 standards. The part is currently in active production status with 674 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications permit selection from multiple qualified sources to optimize supply chain flexibility and cost management.

Substiute Parts

SF12GHA0G
Taiwan Semiconductor CorporationIn Stock: 725SF12GHA0G Datasheet
SF12GHA0G
Current Part
1N4002-G
Comchip TechnologyIn Stock: 136551N4002-G Datasheet
1N4002-G
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1N4002-T
Diodes IncorporatedIn Stock: 302981N4002-T Datasheet
1N4002-T
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1N4002G
Taiwan Semiconductor CorporationIn Stock: 15061N4002G Datasheet
1N4002G
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1N4002RLG
onsemiIn Stock: 163291N4002RLG Datasheet
1N4002RLG
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1N4934G
Taiwan Semiconductor CorporationIn Stock: 16451N4934G Datasheet
1N4934G
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1N4934RLG
onsemiIn Stock: 54031N4934RLG Datasheet
1N4934RLG
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MUR110G
onsemiIn Stock: 5036MUR110G Datasheet
MUR110G
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MUR210G
onsemiIn Stock: 812MUR210G Datasheet
MUR210G
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MUR210RLG
onsemiIn Stock: 3104MUR210RLG Datasheet
MUR210RLG
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 1 A mV
Speed Classification Fast Recovery ≤ 500ns ns
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Operating Temperature - Junction -55 to 150 °C
Package / Case DO-204AL, DO-41, Axial
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution of the SF12GHA0G is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial configuration

Technology Classification: Substitute parts are grouped into two technology categories based on recovery speed:

  1. Fast Recovery Diodes (≤ 500ns): Parts with reverse recovery time of 35 ns or 200 ns. These maintain the fast switching characteristics of the SF12GHA0G and are suitable for applications requiring rapid diode turn-off.

  2. Standard Recovery Diodes (> 500ns): Parts with recovery times exceeding 500 ns. These represent functional equivalents for applications where switching speed is not a critical constraint.

Packaging Considerations: Substitute parts are available in three packaging formats: Cut Tape (CT), Tape & Reel (TR), and Bulk. These represent different supply chain configurations of the same electrical component and do not affect electrical performance.

Product Status Consideration: Substitute parts include components marked as Active, Last Time Buy, Not For New Designs, and Obsolete. Selection should account for long-term availability requirements and design phase constraints.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf @ If Speed trr (ns) Ir @ Vr Tj (°C) Product Status
SF12GHA0G Taiwan Semiconductor 100 V 1 A 950 mV @ 1 A Fast Recovery ≤ 500ns 35 5 µA @ 100 V -55 to 150 Active
1N4002-G Comchip Technology 100 V 1 A 1.1 V @ 1 A Standard Recovery > 500ns 5 µA @ 100 V -55 to 150 Active
1N4002-T Diodes Incorporated 100 V 1 A 1 V @ 1 A Standard Recovery > 500ns 5 µA @ 100 V -65 to 150 Last Time Buy
1N4002G Taiwan Semiconductor 100 V 1 A 1 V @ 1 A Standard Recovery > 500ns 5 µA @ 100 V -55 to 150 Active
1N4002RLG onsemi 100 V 1 A 1.1 V @ 1 A Standard Recovery > 500ns 10 µA @ 100 V -65 to 175 Not For New Designs
1N4934G Taiwan Semiconductor 100 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500ns 200 5 µA @ 100 V -55 to 150 Active
1N4934RLG onsemi 100 V 1 A 1.2 V @ 1 A Fast Recovery ≤ 500ns 300 5 µA @ 100 V -65 to 150 Not For New Designs
MUR110G onsemi 100 V 1 A 875 mV @ 1 A Fast Recovery ≤ 500ns 35 2 µA @ 100 V -65 to 175 Active
MUR210RLG onsemi 100 V 2 A 940 mV @ 2 A Fast Recovery ≤ 500ns 30 2 µA @ 100 V -65 to 175 Active

Engineering Selection Recommendations

For Active Production Designs:

Select from parts with Active product status: SF12GHA0G, 1N4002-G, 1N4002G, 1N4934G, MUR110G, or MUR210RLG. These components are currently manufactured and supported by their respective suppliers.

Fast Recovery Technology Selection:

When application requirements specify fast switching characteristics (reverse recovery time ≤ 35 ns), select SF12GHA0G, MUR110G, or MUR210RLG. These parts deliver the shortest reverse recovery times and are suitable for high-frequency switching applications.

Standard Recovery Technology Selection:

When application requirements do not mandate fast switching performance, 1N4002-G, 1N4002-T, or 1N4002G provide functional equivalence at the 100 V, 1 A rating with standard recovery characteristics.

Current Rating Consideration:

MUR210RLG is rated for 2 A average rectified current. This part is suitable only for applications where the 2 A rating is acceptable or required. It is not a direct substitute for 1 A applications where current derating is not permitted.

Temperature Range Consideration:

Parts rated for -65°C to 175°C (1N4002-T, 1N4002RLG, 1N4934RLG, MUR110G, MUR210RLG) provide extended temperature operation compared to the SF12GHA0G (-55°C to 150°C). Selection depends on application thermal requirements.

Compliance and Qualification:

The SF12GHA0G carries AEC-Q101 automotive qualification. Substitute parts from Comchip Technology, Diodes Incorporated, and onsemi are ROHS3 compliant and REACH unaffected. Verify automotive qualification requirements with design specifications before substitution.

Obsolescence Avoidance:

Parts marked as Obsolete (MUR210G) or Not For New Designs (1N4002-T, 1N4002RLG, 1N4934RLG) should not be selected for new designs. These designations indicate limited future availability and supplier support.

Frequently Asked Questions (FAQ)

Q: Can 1N4002-G be used as a direct substitute for SF12GHA0G?

A: 1N4002-G meets the mandatory electrical parameters: 100 V reverse voltage, 1 A average rectified current, and through-hole axial mounting. However, 1N4002-G is a standard recovery diode (> 500ns) while SF12GHA0G is a fast recovery diode (35 ns). Substitution is valid only if the application does not require fast switching performance.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (SF12GHA0G, 1N4934G, MUR110G) have reverse recovery times of 35 ns or less, enabling rapid turn-off suitable for high-frequency switching circuits. Standard recovery diodes (1N4002 series) have recovery times exceeding 500 ns and are suitable for lower-frequency applications where switching speed is not critical.

Q: Can MUR210RLG replace SF12GHA0G?

A: MUR210RLG has a 2 A average rectified current rating compared to SF12GHA0G's 1 A rating. While the voltage rating (100 V) and fast recovery characteristics (30 ns) are compatible, the higher current rating means MUR210RLG is not a direct substitute. Use MUR210RLG only if the application circuit can accommodate the 2 A rating without adverse effects.

Q: What packaging formats are available for these substitute parts?

A: Substitute parts are supplied in Cut Tape (CT), Tape & Reel (TR), and Bulk packaging. These represent different supply chain configurations and do not affect electrical performance. Selection depends on manufacturing process requirements: Cut Tape for manual assembly, Tape & Reel for automated pick-and-place equipment, and Bulk for high-volume manual insertion.

Q: Are parts marked "Not For New Designs" acceptable for existing production?

A: Parts with "Not For New Designs" status (1N4002-T, 1N4002RLG, 1N4934RLG) are acceptable for sustaining production of existing designs. These parts remain in inventory and are supported by suppliers for legacy applications. However, new product designs should select from parts with Active status to ensure long-term supply continuity.

Q: What is the significance of the reverse leakage current specification?

A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse-biased. SF12GHA0G specifies 5 µA at 100 V, while MUR110G and MUR210RLG specify 2 µA at 100 V. Lower leakage current indicates better reverse blocking performance and is beneficial in precision analog circuits. For most digital and power applications, the difference is not significant.

Q: Can I substitute a standard recovery 1N4002 diode in a high-frequency switching power supply?

A: Standard recovery diodes (1N4002 series) are not recommended for high-frequency switching applications. The long reverse recovery time (> 500 ns) causes excessive reverse current and switching losses. Fast recovery diodes (SF12GHA0G, 1N4934G, MUR110G) with recovery times of 35 ns or less are required for switching frequencies above approximately 10 kHz.

Q: What does RoHS3 compliance mean?

A: RoHS3 compliance indicates the part meets the Restriction of Hazardous Substances Directive 2011/65/EU, which restricts the use of specific hazardous materials including lead, cadmium, and mercury. All listed substitute parts are RoHS3 compliant, confirming compatibility with environmental and regulatory requirements.

Q: Is automotive qualification (AEC-Q101) required for all applications?

A: AEC-Q101 qualification is required only for automotive applications. The SF12GHA0G carries this qualification. For non-automotive applications, substitute parts without automotive qualification are acceptable. Verify application requirements before selecting based on qualification status.

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