SF1004G Equivalent & Substitute Parts

Part Overview

The SF1004G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 200 V DC reverse voltage and 10 A average rectified current in a TO-220AB through-hole package. This component is classified as discontinued at DiGi Electronics, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity. The part operates across a junction temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substiute Parts

SF1004G
Taiwan Semiconductor CorporationIn Stock: 21146SF1004G Datasheet
SF1004G
Current Part
SF1004GHC0G
Taiwan Semiconductor CorporationIn Stock: 975SF1004GHC0G Datasheet
SF1004GHC0G
Parametric Equivalent
BYV32-200G
onsemiIn Stock: 51043BYV32-200G Datasheet
BYV32-200G
Similar
BYV32E-200PQ
WeEn SemiconductorsIn Stock: 25116BYV32E-200PQ Datasheet
BYV32E-200PQ
Similar
DPG20C200PB
IXYSIn Stock: 10101DPG20C200PB Datasheet
DPG20C200PB
Similar
LQA40T200C
Power IntegrationsIn Stock: 797LQA40T200C Datasheet
LQA40T200C
Similar
MUR1620CTG
onsemiIn Stock: 91230MUR1620CTG Datasheet
MUR1620CTG
Similar
SDUR1020CT
SMC Diode SolutionsIn Stock: 2713SDUR1020CT Datasheet
SDUR1020CT
Similar
STTH1002CT
STMicroelectronicsIn Stock: 40467STTH1002CT Datasheet
STTH1002CT
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 10 A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 5 A mV @ A
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the SF1004G is determined by the following critical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 or TO-220AB
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Secondary Compatibility Factors:

  • Current - Average Rectified (Io): 10 A or greater
  • Reverse Recovery Time (trr): 35 ns or less
  • Operating Temperature Range: Minimum -55°C to 150°C overlap
  • RoHS3 Compliance

Substitute parts are grouped into two categories:

Parametric Equivalent: SF1004GHC0G matches all electrical specifications and package requirements identically, with the addition of AEC-Q101 automotive qualification.

Similar Alternatives: Parts with 200 V reverse voltage rating and TO-220-3 package but differing in current rating (8 A or 20 A), forward voltage characteristics, or diode configuration (single diode versus diode array pairs). These alternatives maintain voltage and thermal envelope compatibility while offering trade-offs in current capacity or reverse recovery performance.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV @ A] trr [ns] Ir @ Vr [µA @ V] Package Product Status
SF1004G Taiwan Semiconductor Corporation 200 10 975 @ 5 35 10 @ 200 TO-220-3 Discontinued
SF1004GHC0G Taiwan Semiconductor Corporation 200 10 975 @ 5 35 10 @ 200 TO-220-3 Active
BYV32-200G onsemi 200 8 (per diode) 1150 @ 20 35 50 @ 200 TO-220-3 Active
BYV32E-200PQ WeEn Semiconductors 200 10 (per diode) 850 @ 8 25 5 @ 200 TO-220-3 Active
DPG20C200PB IXYS 200 10 (per diode) 1270 @ 10 35 1 @ 200 TO-220-3 Active
LQA40T200C Power Integrations 200 20 (per diode) 1200 @ 20 17 500 @ 200 TO-220-3 Active
MUR1620CTG onsemi 200 8 (per diode) 975 @ 8 35 5 @ 200 TO-220-3 Active
SDUR1020CT SMC Diode Solutions 200 Not specified 975 @ 5 35 10 @ 200 TO-220-3 Active
STTH1002CT STMicroelectronics 200 8 (per diode) 1100 @ 5 25 5 @ 200 TO-220-3 Active

Engineering Selection Recommendations

First Priority: SF1004GHC0G

The SF1004GHC0G is the direct parametric equivalent to the SF1004G, providing identical electrical specifications and package configuration. This part is currently active in inventory with 937 units available. The addition of AEC-Q101 automotive qualification enhances reliability certification without compromising compatibility. This selection eliminates all substitution trade-offs and is recommended for applications requiring exact performance matching.

Second Priority: BYV32E-200PQ (WeEn Semiconductors)

The BYV32E-200PQ maintains the 200 V reverse voltage rating and 10 A per-diode current rating. It features improved reverse recovery time (25 ns versus 35 ns) and lower reverse leakage current (5 µA versus 10 µA). The diode array configuration (1 Pair Common Cathode) differs from the single-diode SF1004G topology, requiring circuit-level evaluation. This part is active with 25,100 units in stock.

Third Priority: STTH1002CT (STMicroelectronics)

The STTH1002CT provides 200 V reverse voltage with 8 A per-diode rating and improved reverse recovery time (25 ns). Forward voltage is slightly elevated at 1.1 V @ 5 A. The diode array configuration requires circuit compatibility verification. This part is active with 40,400 units available.

Fourth Priority: MUR1620CTG (onsemi)

The MUR1620CTG offers 200 V reverse voltage with 8 A per-diode rating and matching 35 ns reverse recovery time. Forward voltage matches the SF1004G at 975 mV @ 8 A. The diode array configuration and lower current rating necessitate application review. This part is active with 91,202 units in stock.

Lower Priority: DPG20C200PB, LQA40T200C, BYV32-200G, SDUR1020CT

These alternatives present trade-offs in current rating, forward voltage characteristics, or reverse leakage performance that may impact circuit efficiency or thermal management. Selection of these parts requires detailed application analysis and performance validation.

Frequently Asked Questions (FAQ)

Q: Can SF1004GHC0G be used as a direct replacement for SF1004G?

A: Yes. The SF1004GHC0G is a parametric equivalent with identical voltage rating (200 V), current rating (10 A), forward voltage (975 mV @ 5 A), reverse recovery time (35 ns), and package (TO-220-3). The addition of AEC-Q101 automotive qualification does not affect compatibility.

Q: What is the difference between a single diode and a diode array configuration?

A: The SF1004G is a single rectifier diode. Many substitute parts listed (BYV32E-200PQ, DPG20C200PB, LQA40T200C, MUR1620CTG, STTH1002CT) are diode arrays with 1 Pair Common Cathode configuration. Array parts contain two diodes sharing a common cathode terminal. Circuit topology must accommodate this configuration; direct pin-for-pin substitution is not possible without circuit modification.

Q: Why do some substitute parts have lower current ratings (8 A) than the SF1004G (10 A)?

A: Parts such as BYV32-200G, MUR1620CTG, and STTH1002CT are rated at 8 A per diode. These alternatives are suitable only for applications where the actual operating current does not exceed 8 A. Applications requiring the full 10 A capacity must use SF1004GHC0G, BYV32E-200PQ, or DPG20C200PB.

Q: What does reverse recovery time (trr) represent, and why does it vary among substitutes?

A: Reverse recovery time is the interval required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. Shorter trr values (17 ns to 25 ns) indicate faster switching performance and reduced switching losses. The SF1004G specifies 35 ns; substitutes with shorter trr values (BYV32E-200PQ, STTH1002CT, LQA40T200C) offer improved high-frequency performance.

Q: Are all substitute parts RoHS3 compliant?

A: Most substitute parts listed are RoHS3 compliant. SDUR1020CT is noted as REACH Affected. Verify compliance status for specific regulatory requirements in your application region.

Q: Can LQA40T200C be used if my application requires higher current capacity?

A: The LQA40T200C is rated at 20 A per diode, exceeding the SF1004G specification. This part is suitable for applications requiring higher current capacity. However, the diode array configuration and different forward voltage characteristics (1.2 V @ 20 A) require circuit-level validation. Additionally, reverse leakage current is significantly higher (500 µA @ 200 V versus 10 µA @ 200 V), which may impact standby power consumption.

Q: What is the significance of the TO-220-3 package designation?

A: TO-220-3 indicates a three-terminal through-hole package with standardized lead spacing and mounting hole. All substitute parts listed use this package, ensuring mechanical compatibility with existing PCB layouts and heat sink mounting arrangements. Verify that circuit topology accommodates the specific pin configuration of array versus single-diode parts.

Q: How should I evaluate substitutes with different forward voltage specifications?

A: Forward voltage (Vf) affects conduction losses and heat dissipation. The SF1004G specifies 975 mV @ 5 A. Substitutes with higher Vf (such as DPG20C200PB at 1.27 V @ 10 A) generate more heat; those with lower Vf (such as BYV32E-200PQ at 850 mV @ 8 A) reduce losses. Recalculate thermal and efficiency performance for your specific operating current to determine suitability.

Q: Is inventory availability a factor in part selection?

A: Inventory levels are provided for reference. SF1004GHC0G has 937 units available; alternative parts have significantly higher stock levels (ranging from 2,648 to 91,202 units). Availability should be considered alongside electrical compatibility and application requirements.

Request Quote (Ships tomorrow)