SDT05S60 Silicon Carbide Schottky Diode Equivalent & Substitute Parts

Part Overview

The SDT05S60 is a 600 V, 5 A silicon carbide Schottky diode manufactured by Infineon Technologies in the CoolSiC™+ series, packaged in TO-220-2 configuration for through-hole mounting. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. The diode operates across a junction temperature range of -55°C to 175°C with zero reverse recovery time, characteristic of SiC Schottky technology.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	5	A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 5 A	V
Reverse Recovery Time (trr)	0	ns
Current - Reverse Leakage @ Vr	200	µA @ 600 V
Capacitance @ Vr, F	170	pF @ 1V, 1MHz
Mounting Type	Through Hole	-
Package / Case	TO-220-2	-
Operating Temperature - Junction	-55 to 175	°C
Technology	SiC (Silicon Carbide) Schottky	-

Substitute Part Grouping Explanation

Substitution of the SDT05S60 is determined by the following critical parameters: reverse voltage rating (Vr), average rectified current (Io), forward voltage drop (Vf), reverse recovery time (trr), and physical package compatibility (TO-220-2 through-hole mounting).

Parametric Equivalent Classification: Parts meeting identical or superior specifications across all critical parameters while maintaining the same package form factor and mounting type.

Manufacturer Recommended Substitute Classification: Parts approved by manufacturers as direct replacements, which may exceed the original specifications in current capacity or voltage rating while maintaining functional compatibility.

The SDT05S60 operates at 600 V and 5 A with 1.7 V forward voltage drop. Substitute parts must maintain or exceed the 600 V reverse voltage rating and support the 5 A current requirement. Package compatibility (TO-220-2) is mandatory for direct board-level substitution.

Parameter Comparison

Parameter	SDT05S60 (Main)	C3D02060A	C3D06060A	SICR5650
Manufacturer	Infineon Technologies	Wolfspeed, Inc.	Wolfspeed, Inc.	SMC Diode Solutions
Voltage - DC Reverse (Vr) (Max)	600 V	600 V	600 V	650 V
Current - Average Rectified (Io)	5 A	5 A	19 A	5 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 5 A	1.7 V @ 2 A	1.8 V @ 6 A	1.7 V @ 5 A
Reverse Recovery Time (trr)	0 ns	0 ns	0 ns	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 600 V	50 µA @ 600 V	50 µA @ 600 V	60 µA @ 650 V
Capacitance @ Vr, F	170 pF @ 1V, 1MHz	120 pF @ 0V, 1MHz	294 pF @ 0V, 1MHz	Not specified
Package / Case	TO-220-2	TO-220-2	TO-220-2	TO-220-2
Operating Temperature - Junction	-55 to 175°C	-55 to 175°C	-55 to 175°C	-55 to 175°C
Technology	SiC Schottky	SiC Schottky	SiC Schottky	SiC Schottky
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

C3D02060A (Parametric Equivalent): This Wolfspeed Z-Rec® diode matches the SDT05S60 in voltage rating (600 V) and current capacity (5 A) with identical forward voltage characteristics (1.7 V). The part is active in production status with ROHS3 compliance and REACH unaffected designation. Reverse leakage current is superior at 50 µA compared to 200 µA. Capacitance is lower at 120 pF, which may provide improved switching performance. This part is the closest parametric match for direct substitution in existing designs.

C3D06060A (Manufacturer Recommended Substitute): This Wolfspeed Z-Rec® diode exceeds the SDT05S60 specifications with 19 A current capacity against the original 5 A requirement, while maintaining the 600 V voltage rating. Forward voltage is marginally higher at 1.8 V @ 6 A. The part is active in production with ROHS3 compliance and REACH unaffected status. The increased current capacity provides design margin for applications requiring higher transient current handling. Capacitance is higher at 294 pF, which may affect high-frequency switching applications.

SICR5650 (Manufacturer Recommended Substitute): This SMC Diode Solutions part offers a 650 V reverse voltage rating, exceeding the SDT05S60 by 50 V, with matched 5 A current capacity and 1.7 V forward voltage. The part is active in production with ROHS3 compliance. Reverse leakage current is 60 µA @ 650 V. Capacitance specification is not provided. REACH status is listed as affected. The elevated voltage rating provides additional design margin for overvoltage transient protection.

All substitute parts maintain TO-220-2 through-hole packaging, zero reverse recovery time, and -55°C to 175°C junction temperature range, ensuring mechanical and thermal compatibility with the original design.

Frequently Asked Questions (FAQ)

Q: Can C3D02060A be used as a direct replacement for SDT05S60?

A: Yes. C3D02060A is a parametric equivalent with identical 600 V voltage rating, 5 A current capacity, and 1.7 V forward voltage drop. Both parts use TO-220-2 packaging and SiC Schottky technology. The substitute offers improved reverse leakage characteristics (50 µA vs. 200 µA) and lower capacitance (120 pF vs. 170 pF). No circuit modifications are required.

Q: What is the advantage of using C3D06060A over C3D02060A?

A: C3D06060A provides 19 A current capacity compared to 5 A in both the SDT05S60 and C3D02060A. This higher current rating offers design margin for transient current events and thermal stress reduction in high-current applications. The 600 V voltage rating remains identical. Forward voltage is marginally higher at 1.8 V @ 6 A. Capacitance increases to 294 pF, which may impact switching frequency performance in high-speed circuits.

Q: Is SICR5650 suitable for applications requiring 600 V operation?

A: Yes. SICR5650 operates at 650 V, which exceeds the 600 V requirement of the SDT05S60. The 50 V additional margin provides protection against overvoltage transients. Current capacity (5 A) and forward voltage (1.7 V @ 5 A) match the original part. TO-220-2 packaging ensures mechanical compatibility. REACH status is affected, which may require compliance verification for specific applications.

Q: Are all substitute parts RoHS compliant?

A: C3D02060A and C3D06060A are ROHS3 compliant. SICR5650 is also ROHS3 compliant. The original SDT05S60 does not specify RoHS status. All substitute parts meet current environmental compliance standards for electronic components.

Q: What is the impact of different capacitance values on circuit performance?

A: Capacitance affects switching speed and high-frequency behavior. C3D02060A has lower capacitance (120 pF) than SDT05S60 (170 pF), potentially improving switching performance. C3D06060A has higher capacitance (294 pF), which may slow switching transitions and increase switching losses in high-frequency applications. SICR5650 capacitance is not specified. Circuit simulation or testing is necessary to evaluate impact in specific frequency domains.

Q: Can these parts be used interchangeably on the same PCB?

A: All substitute parts use TO-220-2 through-hole packaging with identical pin configuration and mounting footprint. Physical board-level substitution is possible without PCB redesign. However, thermal management may differ due to varying current ratings and forward voltage characteristics. Thermal analysis should confirm adequate heat dissipation for the selected substitute in the target application.

Q: What is the significance of zero reverse recovery time?

A: Zero reverse recovery time (trr = 0 ns) is characteristic of SiC Schottky diodes and indicates absence of stored charge recovery delay. This enables faster switching transitions, reduced switching losses, and improved efficiency compared to silicon junction diodes. All listed parts maintain this performance characteristic.

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