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SCT3060ARC14 Equivalent & Substitute Parts Reference
Part Overview
The SCT3060ARC14 from Rohm Semiconductor is a silicon carbide (SiC) N-Channel MOSFET, rated for 650 V and 39A in a TO-247-4L through-hole package. The device supports up to 165W power dissipation with key features including low Rds On and robust operating temperature capabilities. The current part status is "Last Time Buy," indicating future obsolescence, and necessitating the identification of directly compatible alternative models for design continuity and long-term inventory planning.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Category | Transistors, FETs, MOSFETs |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
| Power Dissipation (Max) | 165W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | TO-247-4L |
| RoHS Status | ROHS3 Compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Substitute Part Grouping Explanation
Substitution is determined exclusively by direct comparison of necessary electrical and mechanical parameters. The STC3060ARC14's equivalents must exhibit the following parameters: N-Channel SiCFET or SiC MOSFET technology, a Drain to Source Voltage (Vdss) of at least 650 V, a continuous Drain Current (Id) of 39A, Rds On values comparable to or below 78mOhm, equal or higher maximum power dissipation, matching or wider gate-source voltage limits, compatible gate charge, and identical or compatible package type (TO-247-4/TO-247-4L through-hole package). Compliance standards (RoHS3, REACH, ECCN classification), and MSL levels are also adhered to for all substitutions.
Key substitution parameters included:
- FET Type (N-Channel)
- Technology (SiC/SiC MOSFET)
- Vdss
- Id (Continuous)
- Rds On (Max)
- Power Dissipation (Max)
- Package / Case
- Certification and compliance fields (RoHS, REACH, MSL, ECCN)
Parameter Comparison
| Parameter | SCT3060ARC14 (Rohm) | SCT3060ARC15 (Rohm) | MSC060SMA070B4 (Microchip) | G3R60MT07K (GeneSiC) |
|---|---|---|---|---|
| Technology | SiCFET (Silicon Carbide) | SiC (Silicon Carbide Junction Transistor) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) |
| FET Type | N-Channel | N-Channel | N-Channel | - |
| Drain to Source Voltage (Vdss) | 650 V | 650 V | 700 V | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) | 39A (Tj) | 39A (Tc) | - |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V | 78mOhm @ 13A, 18V | 75mOhm @ 20A, 20V | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | 18V | 20V | - |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18V | 58 nC @ 18V | 56 nC @ 20V | - |
| Vgs (Max) | +22V, -4V | +22V, -4V | +23V, -10V | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V | 852 pF @ 500 V | 1175 pF @ 700 V | - |
| Power Dissipation (Max) | 165W | 165W | 143W | - |
| Operating Temperature | 175°C (TJ) | 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-4 | TO-247-4 | TO-247-4 | TO-247-4 |
| Supplier Device Package | TO-247-4L | TO-247-4L | TO-247-4 | TO-247-4 |
| RoHS Status | ROHS3 Compliant | - | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 | EAR99 | EAR99 |
Engineering Selection Recommendations
Selection of a substitute for the SCT3060ARC14 should prioritize parts with matching or superior regulatory compliance, including ROHS3 compliance, REACH unaffected status, MSL 1 (Unlimited), and EAR99 ECCN. Active product status should also be considered for long-term support. Packaging and case formats (TO-247-4/TO-247-4L) must be matched for drop-in compatibility.
Frequently Asked Questions (FAQ)
Q1: What parameters are essential for substituting SCT3060ARC14 in a design?
A1: Required parameters include FET Type (N-Channel), SiC/SiCFET technology, minimum Vdss of 650 V, continuous drain current of at least 39A, compatible Rds On, matching or better power dissipation, and identical package type (TO-247-4/TO-247-4L).
Q2: Can I use a substitute if the voltage or current rating is higher than the main part?
A2: Substitute parts may have a higher voltage or current rating, provided the package, technology, and compliance parameters remain compatible.
Q3: What package requirements must be checked?
A3: The substitute part must be provided in the TO-247-4 or TO-247-4L through-hole package to ensure mechanical and footprint compatibility.
Q4: Are there compliance requirements for substitutes?
A4: Substitute parts must maintain at least the same compliance standards, specifically ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited), and ECCN classified as EAR99.
Q5: How do I know if an alternate part is viable for long-term use?
A5: Selection must be based on active part status, matching compliance, and compatible packaging. Check only the information strictly included in provided parameters.
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