SCT3060ARC14 Equivalent & Substitute Parts Reference

Part Overview

The SCT3060ARC14 from Rohm Semiconductor is a silicon carbide (SiC) N-Channel MOSFET, rated for 650 V and 39A in a TO-247-4L through-hole package. The device supports up to 165W power dissipation with key features including low Rds On and robust operating temperature capabilities. The current part status is "Last Time Buy," indicating future obsolescence, and necessitating the identification of directly compatible alternative models for design continuity and long-term inventory planning.

Substiute Parts

SCT3060ARC14
Rohm SemiconductorIn Stock: 1427SCT3060ARC14 Datasheet
SCT3060ARC14
Current Part
SCT3060ARC15
Rohm SemiconductorIn Stock: 1219SCT3060ARC15 Datasheet
SCT3060ARC15
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G3R60MT07K
GeneSiC SemiconductorIn Stock: 2417G3R60MT07K Datasheet
G3R60MT07K
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MSC060SMA070B4
Microchip TechnologyIn Stock: 1048MSC060SMA070B4 Datasheet
MSC060SMA070B4
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Key Parameters

ParameterValue
CategoryTransistors, FETs, MOSFETs
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs58 nC @ 18 V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds852 pF @ 500 V
Power Dissipation (Max)165W
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4L
RoHS StatusROHS3 Compliant
MSL1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99

Substitute Part Grouping Explanation

Substitution is determined exclusively by direct comparison of necessary electrical and mechanical parameters. The STC3060ARC14's equivalents must exhibit the following parameters: N-Channel SiCFET or SiC MOSFET technology, a Drain to Source Voltage (Vdss) of at least 650 V, a continuous Drain Current (Id) of 39A, Rds On values comparable to or below 78mOhm, equal or higher maximum power dissipation, matching or wider gate-source voltage limits, compatible gate charge, and identical or compatible package type (TO-247-4/TO-247-4L through-hole package). Compliance standards (RoHS3, REACH, ECCN classification), and MSL levels are also adhered to for all substitutions.

Key substitution parameters included:

  • FET Type (N-Channel)
  • Technology (SiC/SiC MOSFET)
  • Vdss
  • Id (Continuous)
  • Rds On (Max)
  • Power Dissipation (Max)
  • Package / Case
  • Certification and compliance fields (RoHS, REACH, MSL, ECCN)

Parameter Comparison

Parameter SCT3060ARC14 (Rohm) SCT3060ARC15 (Rohm) MSC060SMA070B4 (Microchip) G3R60MT07K (GeneSiC)
Technology SiCFET (Silicon Carbide) SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
FET Type N-Channel N-Channel N-Channel -
Drain to Source Voltage (Vdss) 650 V 650 V 700 V 750 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 39A (Tj) 39A (Tc) -
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V 78mOhm @ 13A, 18V 75mOhm @ 20A, 20V -
Drive Voltage (Max Rds On, Min Rds On) 18V 18V 20V -
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 18V 58 nC @ 18V 56 nC @ 20V -
Vgs (Max) +22V, -4V +22V, -4V +23V, -10V +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 500 V 852 pF @ 500 V 1175 pF @ 700 V -
Power Dissipation (Max) 165W 165W 143W -
Operating Temperature 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-4 TO-247-4 TO-247-4 TO-247-4
Supplier Device Package TO-247-4L TO-247-4L TO-247-4 TO-247-4
RoHS Status ROHS3 Compliant - ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99 EAR99

Engineering Selection Recommendations

Selection of a substitute for the SCT3060ARC14 should prioritize parts with matching or superior regulatory compliance, including ROHS3 compliance, REACH unaffected status, MSL 1 (Unlimited), and EAR99 ECCN. Active product status should also be considered for long-term support. Packaging and case formats (TO-247-4/TO-247-4L) must be matched for drop-in compatibility.

Frequently Asked Questions (FAQ)

Q1: What parameters are essential for substituting SCT3060ARC14 in a design?
A1: Required parameters include FET Type (N-Channel), SiC/SiCFET technology, minimum Vdss of 650 V, continuous drain current of at least 39A, compatible Rds On, matching or better power dissipation, and identical package type (TO-247-4/TO-247-4L).

Q2: Can I use a substitute if the voltage or current rating is higher than the main part?
A2: Substitute parts may have a higher voltage or current rating, provided the package, technology, and compliance parameters remain compatible.

Q3: What package requirements must be checked?
A3: The substitute part must be provided in the TO-247-4 or TO-247-4L through-hole package to ensure mechanical and footprint compatibility.

Q4: Are there compliance requirements for substitutes?
A4: Substitute parts must maintain at least the same compliance standards, specifically ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited), and ECCN classified as EAR99.

Q5: How do I know if an alternate part is viable for long-term use?
A5: Selection must be based on active part status, matching compliance, and compatible packaging. Check only the information strictly included in provided parameters.

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