SCT2160KEC Equivalent & Substitute Parts Reference

Part Overview

The SCT2160KEC from Rohm Semiconductor is an N-Channel SiC power MOSFET designed for high-voltage switching applications. It features a drain-to-source voltage of 1200 V and continuous drain current of 22 A (Tc), with a maximum power dissipation of 165 W (Tc). This component is supplied in a TO-247-3 through-hole package. The SCT2160KEC product status is "Obsolete," making it necessary to identify compatible and equivalent substitutes for continued design support, repair, or maintenance activities.

Key Parameters

Parameter	Value
Manufacturer Part Number	SCT2160KEC
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	208mOhm @ 7A, 18V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 800 V
Power Dissipation (Max)	165W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Groupings for the SCT2160KEC equivalent and substitute parts are strictly based on the following explicit parameters: FET type (N-Channel), technology type (SiCFET/MOSFET as provided), maximum drain-to-source voltage (Vdss), maximum continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), maximum gate charge (Qg), input capacitance (Ciss), maximum power dissipation, operating temperature, mounting type, and package (TO-247/TO-247-3 variants). Substitution is further conditioned by product compliance (RoHS, REACH, MSL, ECCN), package case, and product status (active vs obsolete).

Parameter Comparison

Part Number	Technology	Vdss	Id (Tc)	Rds On (Max)	Vgs(th) (Max)	Qg (Max)	Ciss (Max)	Power Dissipation (Max)	Operating Temperature (TJ)	Mounting Type	Package / Case	RoHS Status	MSL	REACH	ECCN	Product Status
SCT2160KEC	SiCFET	1200 V	22A	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	1200 pF @ 800 V	165W	175°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Obsolete
SCT2160KEGC11	SiCFET	1200 V	22A	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	1200 pF @ 800 V	165W	175°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Active
SCT2160KEHRC11	SiCFET	1200 V	22A	208mOhm @ 7A, 18V	4V @ 2.5mA	62 nC @ 18 V	1200 pF @ 800 V	165W	175°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Active
IXFH30N85X	MOSFET	850 V	30A	220mOhm @ 500mA, 10V	5.5V @ 2.5mA	68 nC @ 10 V	2460 pF @ 25 V	695W	150°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Active
IXFH32N100X	MOSFET	1000 V	32A	220mOhm @ 16A, 10V	6V @ 4mA	130 nC @ 10 V	4075 pF @ 25 V	890W	150°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Active
IXFX40N90P	MOSFET	900 V	40A	230mOhm @ 20A, 10V	6.5V @ 1mA	230 nC @ 10 V	14000 pF @ 25 V	960W	150°C	Through Hole	TO-247-3 Variant	ROHS3	1	Unaffected	EAR99	Active
MSC180SMA120B	MOSFET	1200 V	21A	225mOhm @ 8A, 20V	4.5V @ 500µA	36 nC @ 20 V	530 pF @ 1000 V	147W	175°C	Through Hole	TO-247-3	ROHS3	1	Unaffected	EAR99	Active

Engineering Selection Recommendations

When selecting an engineering substitute for the SCT2160KEC, preference should be given to parts with an active product status, matching RoHS compliance (ROHS3), MSL 1 (Unlimited), REACH Unaffected status, and the same or compatible ECCN (EAR99). The mechanical package should match (TO-247-3 or variant) to ensure compatibility with existing board layouts and heat sinking.

Frequently Asked Questions (FAQ)

Q1: What criteria are used for determining an equivalent MOSFET substitute?
A: Equivalency is based on FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), on-resistance (Rds On), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), package compatibility, power dissipation, operating temperature, product compliance, and status.

Q2: Why is the package type critical when selecting substitutes?
A: The package type (such as TO-247-3) determines physical and thermal compatibility with the PCB and heat sinking. Only packages specified in the input parameters are considered compatible.

Q3: Are all substitutes electrically identical to the SCT2160KEC?
A: Only parametric equivalents (based strictly on provided parameters) are considered identical. Similar parts may differ in technology, voltage rating, on-resistance, or maximum rated currents, but comply with the group parameters explicitly listed.

Q4: How do compliance parameters like RoHS and REACH affect substitution?
A: Substitute selections require matching or compatible compliance designations to meet environmental and regulatory standards as specified (e.g., ROHS3, REACH Unaffected, MSL 1).

Q5: Can I use parts with different maximum Vdss or Id values as substitutes?
A: Only the specific parameters provided in the comparison are considered. Substitute components with differing Vdss or Id values are listed under "similar" parts as per input. Direct equivalence only exists where these parameters match.

Q6: How is product status relevant for substitutes?
A: Obsolete products may no longer be available in the supply chain. Selection prioritizes active parts to ensure ongoing availability and long-term service support.

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