Equivalent & Substitute Parts Reference for SCS306APC9

Part Overview

The SCS306APC9 from Rohm Semiconductor is a silicon carbide (SiC) Schottky rectifier diode designed for applications requiring high voltage and current capabilities. Rated for 650 V and 6 A, this through-hole diode offers fast switching performance with zero reverse recovery time and low reverse leakage. As an active product, it is frequently required in designs utilizing SiC Schottky characteristics. Identifying alternative models is necessary for supply chain flexibility, risk management, and ensuring project continuity in circumstances such as stock outages or procurement lead times.

Key Parameters

Parameter	Value
Manufacturer Part Number	SCS306APC9
Manufacturer	Rohm Semiconductor
Category	Diodes, Rectifiers
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	6A
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 6 A
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Capacitance @ Vr, F	300pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Operating Temperature - Junction	175°C (Max)
Product Status	Active
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts are selected strictly based on matching or compatible electrical ratings, package type, and compliance designations. Key parameters defining compatibility in this category are:

Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Package / Case
RoHS and REACH Compliance
Product Status

Substitutes must precisely match or fall within specified limits for these parameters to be considered valid alternatives for the SCS306APC9.

Parameter Comparison

Parameter	SCS306APC9 (Rohm Semiconductor)	STPSC4H065D (STMicroelectronics)
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V	650 V
Current - Average Rectified (Io)	6A	4A
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 6 A	1.75 V @ 4 A
Reverse Recovery Time (trr)	0 ns	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 650 V	40 µA @ 650 V
Capacitance @ Vr, F	300pF @ 1V, 1MHz	200pF @ 0V, 1MHz
Mounting Type	Through Hole	Through Hole
Package / Case	TO-220-2	TO-220-2
Operating Temperature - Junction	175°C (Max)	-40°C ~ 175°C
Product Status	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Both SCS306APC9 and STPSC4H065D are listed as active products and carry RoHS3 and REACH compliance certifications. ECCN and HTSUS codes are provided for both. Only products with an active status and current certifications should be considered for engineering substitution within this product category and provided application.

Frequently Asked Questions (FAQ)

Q: What are the critical electrical matching parameters for substituting SiC Schottky rectifiers?
A: Voltage rating, current rating, forward voltage, reverse recovery time, reverse leakage, and capacitance are the primary parameters for substitution.

Q: Do package type and mounting matter when selecting equivalent diodes?
A: Yes, matching package type (e.g., TO-220-2) and mounting method is essential for mechanical compatibility.

Q: Is the difference in current rating significant between SCS306APC9 and STPSC4H065D?
A: Only substitutes that meet or exceed the required current rating should be chosen per engineering requirements.

Q: Are both parts compliant with RoHS and REACH?
A: Both SCS306APC9 and STPSC4H065D are RoHS3 compliant and REACH unaffected based on provided data.

Q: How is reverse recovery time relevant in SiC Schottky diodes substitution?
A: Both referenced parts possess zero reverse recovery time; this is a key parameter for high-speed rectifier applications.

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