SB80W10T-H Equivalent & Substitute Parts

Part Overview

The SB80W10T-H is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with a maximum reverse voltage of 100 V and average rectified current of 8 A per diode. The device is packaged in a through-hole TO-251-3 (IPak) configuration with short leads. This part is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	8 A
Voltage - Forward (Vf) (Max) @ If	800 mV @ 3 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 50 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the SB80W10T-H is determined by the following critical parameters:

Electrical Compatibility Requirements:

Diode configuration must be 1 pair common cathode
Technology must be Schottky
Maximum reverse voltage (Vr) must be ≥ 100 V
Average rectified current (Io) per diode must be ≥ 8 A
Fast recovery speed characteristic (≤ 500 ns, > 200 mA)
Operating temperature range must encompass the original specification

Mechanical Compatibility Considerations:

Package type may differ (through-hole to surface-mount conversion acceptable with appropriate board design modifications)
Lead configuration and form factor changes require PCB layout adjustment

The RB088BM100FHTL from Rohm Semiconductor meets all electrical requirements while offering enhanced specifications in current capacity and reverse leakage performance. The primary difference is the mounting technology transition from through-hole to surface-mount (TO-252-3 DPAK).

Parameter Comparison

Parameter	SB80W10T-H (onsemi)	RB088BM100FHTL (Rohm Semiconductor)
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V	100 V
Current - Average Rectified (Io) (per Diode)	8 A	10 A
Voltage - Forward (Vf) (Max) @ If	800 mV @ 3 A	870 mV @ 5 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 50 V	5 µA @ 100 V
Operating Temperature - Junction	-55°C ~ 150°C	150°C (Max)
Mounting Type	Through Hole	Surface Mount
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Status	Obsolete	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

The RB088BM100FHTL is an active product from Rohm Semiconductor and represents a viable electrical substitute for the obsolete SB80W10T-H. The substitute part exceeds the original specifications in current capacity (10 A versus 8 A) and provides superior reverse leakage characteristics (5 µA @ 100 V versus 100 µA @ 50 V).

Compliance and Qualification Status: The RB088BM100FHTL carries AEC-Q101 automotive qualification and is RoHS3 compliant, providing enhanced supply chain reliability and regulatory alignment compared to the obsolete original part.

Implementation Considerations: The transition from through-hole (TO-251-3) to surface-mount (TO-252-3 DPAK) packaging requires PCB redesign. Both packages feature identical electrical pin configurations (1 pair common cathode), ensuring functional compatibility at the circuit level. The DPAK package provides superior thermal performance through its integrated tab connection, which may improve thermal management in the application.

Frequently Asked Questions (FAQ)

Q: Can the RB088BM100FHTL directly replace the SB80W10T-H without circuit modification?

A: Electrical substitution is direct; the diode configuration, voltage rating, and current specifications are compatible. However, the mounting technology differs (surface-mount versus through-hole), requiring PCB layout modification.

Q: What are the key electrical differences between these parts?

A: The RB088BM100FHTL provides higher current capacity (10 A versus 8 A per diode) and lower reverse leakage current (5 µA @ 100 V versus 100 µA @ 50 V). Forward voltage characteristics differ slightly due to different measurement conditions (870 mV @ 5 A versus 800 mV @ 3 A).

Q: Is the RB088BM100FHTL suitable for automotive applications?

A: Yes. The RB088BM100FHTL carries AEC-Q101 qualification, making it suitable for automotive-grade applications. The original SB80W10T-H does not specify automotive qualification.

Q: What is the impact of switching from TO-251-3 to TO-252-3 DPAK packaging?

A: The TO-252-3 DPAK package offers improved thermal dissipation through its larger tab connection compared to the TO-251-3 IPak. This requires PCB redesign but provides thermal performance benefits. Both packages maintain identical electrical pin configurations.

Q: Are there any moisture sensitivity concerns with the substitute part?

A: Both parts carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for either component.

Q: What is the operating temperature range of the RB088BM100FHTL?

A: The RB088BM100FHTL specifies a maximum junction temperature of 150°C. The original SB80W10T-H operates from -55°C to 150°C. For applications requiring the full -55°C lower temperature limit, thermal analysis of the substitute part at minimum operating temperature is necessary.

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